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Other articles related with "GaN"：
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68402 |
Kaiyan Zhang(张凯彦), Peng Song(宋朋), Fengcai Ma(马凤才), and Yuanzuo Li(李源作), |
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Rational molecular engineering towards efficient heterojunction solar cells based on organic molecular acceptors |
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Chin. Phys. B
2024 Vol.33 (6): 68402-068402
[Abstract]
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[PDF 1941 KB]
(1)
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58702 |
Wenli Jiang, Xiao Ouyang, Menglin Qiu, Minju Ying, Lin Chen, Pan Pang, Chunlei Zhang, Yaofeng Zhang, and Bin Liao |
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In situ luminescence measurements of GaN/Al$_{\bf 2}$O$_{\bf 3}$ film under different energy proton irradiations |
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Chin. Phys. B
2024 Vol.33 (5): 58702-058702
[Abstract]
(14)
[HTML 0 KB]
[PDF 1190 KB]
(0)
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47801 |
Xiaozheng Han(韩晓政), Jihong Zhang(张纪红), Haotuo Liu(刘皓佗), Xiaohu Wu(吴小虎), and Huiwen Leng(冷惠文) |
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Near-field radiative heat transfer between nanoporous GaN films |
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Chin. Phys. B
2024 Vol.33 (4): 47801-047801
[Abstract]
(32)
[HTML 0 KB]
[PDF 2672 KB]
(10)
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38101 |
Chang-Sheng Zhu(朱昶胜), Li-Jun Wang(王利军), Zi-Hao Gao(高梓豪), Shuo Liu(刘硕), and Guang-Zhao Li(李广召) |
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Exploration of the coupled lattice Boltzmann model based on a multiphase field model: A study of the solid-liquid-gas interaction mechanism in the solidification process |
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Chin. Phys. B
2024 Vol.33 (3): 38101-038101
[Abstract]
(46)
[HTML 1 KB]
[PDF 1112 KB]
(76)
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33201 |
Fujian Li(李福建), Xinlu Cheng(程新路), and Hong Zhang(张红) |
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Core level excitation spectra of La and Mn ions in LaMnO3 |
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Chin. Phys. B
2024 Vol.33 (3): 33201-033201
[Abstract]
(43)
[HTML 1 KB]
[PDF 1028 KB]
(74)
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17502 |
Jie Li(李杰), Yinan Chen(陈一楠), Nuo Gong(宫诺), Xin Huang(黄欣), Zhihong Yang(杨志红), and Yakui Weng(翁亚奎) |
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Magnetic and electronic properties of La-doped hexagonal 4H-SrMnO3 |
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Chin. Phys. B
2024 Vol.33 (1): 17502-17502
[Abstract]
(75)
[HTML 0 KB]
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(13)
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17204 |
Qingshuo Liu(刘晴硕), Junhong Yu(余俊宏), and Jianbo Hu(胡建波) |
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Photophysics of metal-organic frameworks: A brief overview |
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Chin. Phys. B
2024 Vol.33 (1): 17204-17204
[Abstract]
(94)
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(59)
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16801 |
Kai Chen(陈凯), Jianguo Zhao(赵见国), Yu Ding(丁宇), Wenxiao Hu(胡文晓), Bin Liu(刘斌), Tao Tao(陶涛), Zhe Zhuang(庄喆), Yu Yan(严羽), Zili Xie(谢自力), Jianhua Chang(常建华), Rong Zhang(张荣), and Youliao Zheng(郑有炓) |
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Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films |
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Chin. Phys. B
2024 Vol.33 (1): 16801-16801
[Abstract]
(89)
[HTML 1 KB]
[PDF 872 KB]
(40)
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127102 |
Yuwei Zhou(周雨威), Minhan Mi(宓珉瀚), Pengfei Wang(王鹏飞), Can Gong(龚灿), Yilin Chen(陈怡霖), Zhihong Chen(陈治宏), Jielong Liu(刘捷龙), Mei Yang(杨眉), Meng Zhang(张濛), Qing Zhu(朱青), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications |
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Chin. Phys. B
2023 Vol.32 (12): 127102-127102
[Abstract]
(73)
[HTML 0 KB]
[PDF 2757 KB]
(33)
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117701 |
Xinke Liu(刘新科), Zhichen Lin(林之晨), Yuheng Lin(林钰恒), Jianjin Chen(陈建金), Ping Zou(邹苹), Jie Zhou(周杰), Bo Li(李博), Longhai Shen(沈龙海), Deliang Zhu(朱德亮), Qiang Liu(刘强), Wenjie Yu(俞文杰), Xiaohua Li(黎晓华), Hong Gu(顾泓), Xinzhong Wang(王新中), and Shuangwu Huang(黄双武) |
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Facile integration of an Al-rich Al1-xInxN photodetector on free-standing GaN by radio-frequency magnetron sputtering |
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Chin. Phys. B
2023 Vol.32 (11): 117701-117701
[Abstract]
(92)
[HTML 0 KB]
[PDF 1983 KB]
(77)
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117302 |
Si-Yu Liu(刘思雨), Jie-Jie Zhu(祝杰杰), Jing-Shu Guo(郭静姝), Kai Cheng(程凯), Min-Han Mi(宓珉瀚), Ling-Jie Qin(秦灵洁), Bo-Wen Zhang(张博文), Min Tang(唐旻), and Xiao-Hua Ma(马晓华) |
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Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz |
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Chin. Phys. B
2023 Vol.32 (11): 117302-117302
[Abstract]
(114)
[HTML 0 KB]
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(150)
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108101 |
Xuerui Niu(牛雪锐), Bin Hou(侯斌), Meng Zhang(张濛), Ling Yang(杨凌), Mei Wu(武玫), Xinchuang Zhang(张新创), Fuchun Jia(贾富春), Chong Wang(王冲), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer |
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Chin. Phys. B
2023 Vol.32 (10): 108101-108101
[Abstract]
(110)
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[PDF 720 KB]
(128)
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104212 |
Wenbin Lu(芦文斌), Yongcong Chen(陈永聪), Xuyun Yang(杨旭云), and Ping Ao(敖平) |
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Efficient transfer of metallophosphor excitons via confined polaritons in organic nanocrystals |
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Chin. Phys. B
2023 Vol.32 (10): 104212-104212
[Abstract]
(88)
[HTML 1 KB]
[PDF 615 KB]
(97)
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103301 |
Qun Zhang(张群), Xiaofei Wang(王晓菲), Zhimin Wu(吴智敏), Xiaofang Li(李小芳), Kai Zhang(张凯), Yuzhi Song(宋玉志), Jianzhong Fan(范建忠), Chuan-Kui Wang(王传奎), and Lili Lin(蔺丽丽) |
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Effect of aggregation on thermally activated delayed fluorescence and ultralong organic phosphorescence: QM/MM study |
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Chin. Phys. B
2023 Vol.32 (10): 103301-103301
[Abstract]
(113)
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[PDF 5824 KB]
(10)
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98506 |
Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉), and Bo Zhang(张波) |
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Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode |
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Chin. Phys. B
2023 Vol.32 (9): 98506-098506
[Abstract]
(123)
[HTML 1 KB]
[PDF 1360 KB]
(161)
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87301 |
Tao Zhang(张涛), Ruo-Han Li(李若晗), Kai Su(苏凯), Hua-Ke Su(苏华科), Yue-Guang Lv(吕跃广), Sheng-Rui Xu(许晟瑞), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
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Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes |
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Chin. Phys. B
2023 Vol.32 (8): 87301-087301
[Abstract]
(149)
[HTML 0 KB]
[PDF 848 KB]
(232)
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78503 |
Siyu Deng(邓思宇), Dezun Liao(廖德尊), Jie Wei(魏杰), Cheng Zhang(张成),Tao Sun(孙涛), and Xiaorong Luo(罗小蓉) |
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High-performance vertical GaN field-effect transistor with an integrated self-adapted channel diode for reverse conduction |
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Chin. Phys. B
2023 Vol.32 (7): 78503-078503
[Abstract]
(140)
[HTML 0 KB]
[PDF 1597 KB]
(247)
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76102 |
Aoxue Zhong(钟傲雪), Lei Wang(王磊), Yun Tang(唐蕴), Yongtao Yang(杨永涛), Jinjin Wang(王进进), Huiping Zhu(朱慧平), Zhenping Wu(吴真平), Weihua Tang(唐为华), and Bo Li(李博) |
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Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films |
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Chin. Phys. B
2023 Vol.32 (7): 76102-076102
[Abstract]
(143)
[HTML 1 KB]
[PDF 584 KB]
(130)
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67305 |
Peng Zhang(张鹏), Miao Li(李苗), Jun-Wen Chen(陈俊文), Jia-Zhi Liu(刘加志), and Xiao-Hua Ma(马晓华) |
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Research on self-supporting T-shaped gate structure of GaN-based HEMT devices |
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Chin. Phys. B
2023 Vol.32 (6): 67305-067305
[Abstract]
(143)
[HTML 1 KB]
[PDF 1459 KB]
(27)
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66502 |
Ying Tang(唐莹), Junkun Liu(刘俊坤), Zihao Yu(于子皓), Ligang Sun(孙李刚), and Linli Zhu(朱林利) |
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Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms |
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Chin. Phys. B
2023 Vol.32 (6): 66502-066502
[Abstract]
(180)
[HTML 1 KB]
[PDF 661 KB]
(141)
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54210 |
Feifei Qin(秦飞飞), Yang Sun(孙阳), Ying Yang(杨颖), Xin Li(李欣), Xu Wang(王旭), Junfeng Lu(卢俊峰), Yongjin Wang(王永进), and Gangyi Zhu(朱刚毅) |
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Optically pumped wavelength-tunable lasing from a GaN beam cavity with an integrated Joule heater pivoted on Si |
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Chin. Phys. B
2023 Vol.32 (5): 54210-054210
[Abstract]
(160)
[HTML 1 KB]
[PDF 2121 KB]
(83)
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58503 |
Yi-Wei Cao(曹一伟), Quan-Jiang Lv(吕全江), Tian-Peng Yang(杨天鹏), Ting-Ting Mi(米亭亭),Xiao-Wen Wang(王小文), Wei Liu(刘伟), and Jun-Lin Liu(刘军林) |
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Realization of high-efficiency AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping of the p-AlGaN hole injection layer |
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Chin. Phys. B
2023 Vol.32 (5): 58503-058503
[Abstract]
(163)
[HTML 1 KB]
[PDF 760 KB]
(82)
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40701 |
Hongyang Guo(郭宏阳), Ping Zhang(张平), Shengpeng Yang(杨生鹏), Shaomeng Wang(王少萌), and Yubin Gong(宫玉彬) |
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Numerical study on THz radiation of two-dimensional plasmon resonance of GaN HEMT array |
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Chin. Phys. B
2023 Vol.32 (4): 40701-040701
[Abstract]
(217)
[HTML 1 KB]
[PDF 2888 KB]
(107)
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37303 |
Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process |
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Chin. Phys. B
2023 Vol.32 (3): 37303-037303
[Abstract]
(245)
[HTML 1 KB]
[PDF 836 KB]
(131)
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37201 |
Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军) |
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Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate |
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Chin. Phys. B
2023 Vol.32 (3): 37201-037201
[Abstract]
(283)
[HTML 1 KB]
[PDF 1115 KB]
(235)
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27302 |
Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海) |
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Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage |
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Chin. Phys. B
2023 Vol.32 (2): 27302-027302
[Abstract]
(231)
[HTML 0 KB]
[PDF 726 KB]
(160)
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20701 |
Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华) |
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Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction |
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Chin. Phys. B
2023 Vol.32 (2): 20701-020701
[Abstract]
(220)
[HTML 0 KB]
[PDF 1839 KB]
(80)
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28101 |
Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺) |
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Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si |
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Chin. Phys. B
2023 Vol.32 (2): 28101-028101
[Abstract]
(256)
[HTML 1 KB]
[PDF 1419 KB]
(115)
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18103 |
Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson |
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Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets |
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Chin. Phys. B
2023 Vol.32 (1): 18103-018103
[Abstract]
(325)
[HTML 0 KB]
[PDF 3311 KB]
(266)
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17306 |
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇) |
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Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure |
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Chin. Phys. B
2023 Vol.32 (1): 17306-017306
[Abstract]
(259)
[HTML 0 KB]
[PDF 1537 KB]
(116)
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127701 |
Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平) |
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Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator |
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Chin. Phys. B
2022 Vol.31 (12): 127701-127701
[Abstract]
(257)
[HTML 0 KB]
[PDF 1297 KB]
(54)
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128701 |
Xi-Le Wei(魏熙乐), Yu-Lin Bai(白玉林), Jiang Wang(王江), Si-Yuan Chang(常思远), and Chen Liu(刘晨) |
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Parkinsonian oscillations and their suppression by closed-loop deep brain stimulation based on fuzzy concept |
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Chin. Phys. B
2022 Vol.31 (12): 128701-128701
[Abstract]
(203)
[HTML 1 KB]
[PDF 2702 KB]
(117)
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117105 |
Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications |
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Chin. Phys. B
2022 Vol.31 (11): 117105-117105
[Abstract]
(300)
[HTML 1 KB]
[PDF 831 KB]
(93)
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110101 |
Ruiqi Cao(曹瑞琪), Yaochang Yue(乐耀昌), Hong Zhang(张弘), Qian Cheng(程倩), Boxin Wang(王博欣), Shilin Li(李世麟), Yuan Zhang(张渊), Shuhong Li(李书宏), and Huiqiong Zhou(周惠琼) |
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A silazane additive for CsPbI2Br perovskite solar cells |
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Chin. Phys. B
2022 Vol.31 (11): 110101-110101
[Abstract]
(312)
[HTML 0 KB]
[PDF 1406 KB]
(88)
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117304 |
Yinlu Gao(高寅露), Kai Cheng(程开), Xue Jiang(蒋雪), and Jijun Zhao(赵纪军) |
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Interface engineering of transition metal dichalcogenide/GaN heterostructures: Modified broadband for photoelectronic performance |
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Chin. Phys. B
2022 Vol.31 (11): 117304-117304
[Abstract]
(358)
[HTML 1 KB]
[PDF 3878 KB]
(173)
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117301 |
Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华) |
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Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress |
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Chin. Phys. B
2022 Vol.31 (11): 117301-117301
[Abstract]
(311)
[HTML 1 KB]
[PDF 916 KB]
(36)
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107403 |
Mengzhu Shi(石孟竹), Baolei Kang(康宝蕾), Tao Wu(吴涛), and Xianhui Chen(陈仙辉) |
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Recent advances in quasi-2D superconductors via organic molecule intercalation |
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Chin. Phys. B
2022 Vol.31 (10): 107403-107403
[Abstract]
(253)
[HTML 0 KB]
[PDF 2577 KB]
(171)
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106103 |
Ning Liu(刘宁), Li-Min Zhang(张利民), Xue-Ting Liu(刘雪婷), Shuo Zhang(张硕), Tie-Shan Wang(王铁山), and Hong-Xia Guo(郭红霞) |
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Lattice damage in InGaN induced by swift heavy ion irradiation |
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Chin. Phys. B
2022 Vol.31 (10): 106103-106103
[Abstract]
(272)
[HTML 0 KB]
[PDF 1242 KB]
(49)
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98203 |
Jieru Xu(许洁茹), Qiuchen Wang(王秋辰), Wenlin Yan(闫汶琳), Liquan Chen(陈立泉), Hong Li(李泓), and Fan Wu(吴凡) |
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Liquid-phase synthesis of Li2S and Li3PS4 with lithium-based organic solutions |
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Chin. Phys. B
2022 Vol.31 (9): 98203-098203
[Abstract]
(417)
[HTML 1 KB]
[PDF 7428 KB]
(223)
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97401 |
Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬) |
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Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique |
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Chin. Phys. B
2022 Vol.31 (9): 97401-097401
[Abstract]
(317)
[HTML 0 KB]
[PDF 1088 KB]
(91)
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80501 |
Pei-Feng Lin(林培锋), Xiao Hu(胡箫), and Jian-Zhong Lin(林建忠) |
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Inertial focusing and rotating characteristics of elliptical and rectangular particle pairs in channel flow |
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Chin. Phys. B
2022 Vol.31 (8): 80501-080501
[Abstract]
(265)
[HTML 0 KB]
[PDF 4313 KB]
(30)
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87104 |
Jing-Yu Zhao(赵靖宇) and Zheng-Yu Weng(翁征宇) |
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Mottness, phase string, and high-Tc superconductivity |
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Chin. Phys. B
2022 Vol.31 (8): 87104-087104
[Abstract]
(386)
[HTML 1 KB]
[PDF 969 KB]
(268)
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74206 |
Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋) |
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Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers |
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Chin. Phys. B
2022 Vol.31 (7): 74206-074206
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(68)
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77801 |
Yi Li(李毅), Mei Ge(葛梅), Meiyu Wang(王美玉), Youhua Zhu(朱友华), and Xinglong Guo(郭兴龙) |
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Effect of surface plasmon coupling with radiating dipole on the polarization characteristics of AlGaN-based light-emitting diodes |
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Chin. Phys. B
2022 Vol.31 (7): 77801-077801
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68501 |
Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate |
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Chin. Phys. B
2022 Vol.31 (6): 68501-068501
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68101 |
Ying-Zhe Wang(王颖哲), Mao-Sen Wang(王茂森), Ning Hua(化宁), Kai Chen(陈凯), Zhi-Min He(何志敏), Xue-Feng Zheng(郑雪峰), Pei-Xian Li(李培咸), Xiao-Hua Ma(马晓华), Li-Xin Guo(郭立新), and Yue Hao(郝跃) |
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Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes |
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Chin. Phys. B
2022 Vol.31 (6): 68101-068101
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57301 |
Xinchuang Zhang(张新创), Mei Wu(武玫), Bin Hou(侯斌), Xuerui Niu(牛雪锐), Hao Lu(芦浩), Fuchun Jia(贾富春), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment |
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Chin. Phys. B
2022 Vol.31 (5): 57301-057301
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58505 |
Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications |
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Chin. Phys. B
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46501 |
Qilong Gao(高其龙), Yixin Jiao(焦怡馨), and Gang Li(李纲) |
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Zero thermal expansion in metal-organic framework with imidazole dicarboxylate ligands |
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Chin. Phys. B
2022 Vol.31 (4): 46501-046501
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48202 |
Zhengran Wang(王正然), Qiao Zhou(周悄), Bifa Cao(曹必发), Bo Li(栗博), Lixia Zhu(朱丽霞), Xinglei Zhang(张星蕾), Hang Yin(尹航), and Ying Shi(石英) |
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Theoretical study on the mechanism for the excited-state double proton transfer process of an asymmetric Schiff base ligand |
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Chin. Phys. B
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46401 |
Xin Zhang(张鑫), Ruge Quhe(屈贺如歌), and Ming Lei(雷鸣) |
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Insights into the adsorption of water and oxygen on the cubic CsPbBr3 surfaces: A first-principles study |
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Chin. Phys. B
2022 Vol.31 (4): 46401-046401
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(252)
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47701 |
Ji-Yao Du(都继瑶), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), and Jin-Ping Ao(敖金平) |
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Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor |
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Chin. Phys. B
2022 Vol.31 (4): 47701-047701
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46103 |
Jun-Yuan Yang(杨浚源), Zong-Kai Feng(冯棕楷), Ling Jiang(蒋领), Jie Song(宋杰), Xiao-Xun He(何晓珣), Li-Ming Chen(陈黎明), Qing Liao(廖庆), Jiao Wang(王姣), and Bing-Sheng Li(李炳生) |
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Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions |
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Chin. Phys. B
2022 Vol.31 (4): 46103-046103
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38804 |
Ying Hu(胡颖), Jiaping Wang(王家平), Peng Zhao(赵鹏), Zhenhua Lin(林珍华), Siyu Zhang(张思玉), Jie Su(苏杰), Miao Zhang(张苗), Jincheng Zhang(张进成), Jingjing Chang(常晶晶), and Yue Hao(郝跃) |
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Reveal the large open-circuit voltage deficit of all-inorganicCsPbIBr2 perovskite solar cells |
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Chin. Phys. B
2022 Vol.31 (3): 38804-038804
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38103 |
Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘) |
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Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD |
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Chin. Phys. B
2022 Vol.31 (3): 38103-038103
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37303 |
Qinxuan Dai(戴沁煊), Chao Luo(骆超), Xianjin Wang(王显进), Feng Gao(高峰), Xiaole Jiang(姜晓乐), and Qing Zhao(赵清) |
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Surface modulation of halide perovskite films for efficient and stable solar cells |
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Chin. Phys. B
2022 Vol.31 (3): 37303-037303
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38802 |
Li-Jia Chen(陈丽佳), Guo-Xi Niu(牛国玺), Lian-Bin Niu(牛连斌), and Qun-Liang Song(宋群梁) |
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Effect of net carriers at the interconnection layer in tandem organic solar cells |
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Chin. Phys. B
2022 Vol.31 (3): 38802-038802
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(91)
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27201 |
Meng Li(李萌), Zuzhi Bai(柏祖志), Xiao Chen(陈晓), Cong-Cong Liu(刘聪聪), Jing-Kun Xu(徐景坤), Xiao-Qi Lan(蓝小琪), and Feng-Xing Jiang(蒋丰兴) |
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Thermoelectric transport in conductive poly(3,4-ethylenedioxythiophene) |
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Chin. Phys. B
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28506 |
Qi Zhang(张奇), Hengda Sun(孙恒达), and Meifang Zhu(朱美芳) |
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Structure design for high performance n-type polymer thermoelectric materials |
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Chin. Phys. B
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28203 |
Zhen Xu (徐真), Hui Li (李慧), and Lidong Chen(陈立东) |
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Recent progress in design of conductive polymers to improve the thermoelectric performance |
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Chin. Phys. B
2022 Vol.31 (2): 28203-028203
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[PDF 4924 KB]
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27103 |
Pengfei Wang(王鹏飞), Minhan Mi(宓珉瀚), Meng Zhang(张濛), Jiejie Zhu(祝杰杰), Yuwei Zhou(周雨威), Jielong Liu(刘捷龙), Sijia Liu(刘思佳), Ling Yang(杨凌), Bin Hou(侯斌), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications |
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Chin. Phys. B
2022 Vol.31 (2): 27103-027103
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27301 |
Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching |
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Chin. Phys. B
2022 Vol.31 (2): 27301-027301
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(475)
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(146)
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18801 |
Tao Wang(汪涛), Gui-Jiang Xiao(肖贵将), Ren Sun(孙韧), Lin-Bao Luo(罗林保), and Mao-Xiang Yi(易茂祥) |
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High efficiency ETM-free perovskite cell composed of CuSCN and increasing gradient CH3NH3PbI3 |
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Chin. Phys. B
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(83)
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18101 |
Jia-Le Tang(唐家乐) and Chao Liu(刘超) |
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Removal of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch |
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Chin. Phys. B
2022 Vol.31 (1): 18101-018101
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18102 |
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Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties |
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Chin. Phys. B
2022 Vol.31 (1): 18102-018102
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17801 |
Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武) |
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Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer |
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Chin. Phys. B
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123302 |
Mu-Zhen Li(李慕臻), Fei-Yan Li(李飞雁), Qun Zhang(张群), Kai Zhang(张凯), Yu-Zhi Song(宋玉志), Jian-Zhong Fan(范建忠), Chuan-Kui Wang(王传奎), and Li-Li Lin(蔺丽丽) |
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Theoretical verification of intermolecular hydrogen bond induced thermally activated delayed fluorescence in SOBF-Ome |
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Chin. Phys. B
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[Abstract]
(457)
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128102 |
Yue-Bo Liu(柳月波), Hong-Hui Liu(刘红辉), Jun-Yu Shen(沈俊宇), Wan-Qing Yao(姚婉青), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君) |
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Distribution of donor states on the surfaceof AlGaN/GaN heterostructures |
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Chin. Phys. B
2021 Vol.30 (12): 128102-128102
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118105 |
Yong-Chao Jiang(姜永超), Gui-Xia Li(李桂霞), Gui-Feng Yu(于桂凤), Juan Wang(王娟), Shu-Lai Huang(黄树来), and Guo-Liang Xu(徐国亮) |
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High adsorption and separation performance ofCO2 over N2 in azo-based (N=N) pillar[6]arene supramolecular organic frameworks |
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Chin. Phys. B
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(54)
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118101 |
Jian-Kai Xu(徐健凯), Li-Juan Jiang(姜丽娟), Qian Wang(王茜), Quan Wang(王权), Hong-Ling Xiao(肖红领), Chun Feng(冯春), Wei Li(李巍), and Xiao-Liang Wang(王晓亮) |
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Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si |
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Chin. Phys. B
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(465)
[HTML 1 KB]
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(113)
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116104 |
Kai-Heng Shao(邵凯恒), Yu-Min Zhang(张育民), Jian-Feng Wang(王建峰), and Ke Xu(徐科) |
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Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation |
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Chin. Phys. B
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(398)
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(78)
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110501 |
Qi Li(李琦), Xingyuan Wang(王兴元), He Wang(王赫), Xiaolin Ye(叶晓林), Shuang Zhou(周双), Suo Gao(高锁), and Yunqing Shi(施云庆) |
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A secure image protection algorithm by steganography and encryption using the 2D-TSCC |
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Chin. Phys. B
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(422)
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(101)
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117303 |
Qun-Si Yang(羊群思), Qing Liu(刘清), Dong Zhou(周东), Wei-Zong Xu(徐尉宗), Yi-Wang Wang(王宜望), Fang-Fang Ren(任芳芳), and Hai Lu(陆海) |
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Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template |
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Chin. Phys. B
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[Abstract]
(448)
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[PDF 997 KB]
(61)
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117302 |
Yue-Bo Liu(柳月波), Jun-Yu Shen(沈俊宇), Jie-Ying Xing(邢洁莹), Wan-Qing Yao(姚婉青), Hong-Hui Liu(刘红辉), Ya-Qiong Dai(戴雅琼), Long-Kun Yang(杨隆坤), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君) |
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Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation |
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Chin. Phys. B
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(592)
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108502 |
Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞) |
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Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors |
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Chin. Phys. B
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(146)
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104207 |
Li Zhang(张力), Wei-Ning Liu(刘卫宁), Yan-Zhou Wang(王艳周), Qi-Ming Liu(刘奇明), Jun-Shuai Li(栗军帅), Ya-Li Li(李亚丽), and De-Yan He(贺德衍) |
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Enhancing light absorption for organic solar cells using front ITO nanograting and back ultrathin Al layer |
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Chin. Phys. B
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(345)
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(41)
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97102 |
Zhen Feng(冯振), Yi Li(李依), Yaqiang Ma(马亚强), Yipeng An(安义鹏), and Xianqi Dai(戴宪起) |
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Magnetic and electronic properties of two-dimensional metal-organic frameworks TM3(C2NH)12 |
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Chin. Phys. B
2021 Vol.30 (9): 97102-097102
[Abstract]
(553)
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[PDF 4889 KB]
(328)
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97201 |
Yao Li(李姚) and Hong-Bin Pu(蒲红斌) |
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Fang-Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures |
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Chin. Phys. B
2021 Vol.30 (9): 97201-097201
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(480)
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(81)
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87305 |
Ruo-Han Li(李若晗), Wu-Xiong Fei(费武雄), Rui Tang(唐锐), Zhao-Xi Wu(吴照玺), Chao Duan(段超), Tao Zhang(张涛), Dan Zhu(朱丹), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
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Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure |
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Chin. Phys. B
2021 Vol.30 (8): 87305-087305
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(493)
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[PDF 830 KB]
(160)
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87301 |
Ming Chu(褚明), Shao-Bo Liu(刘少博), An-Ran Yu(蔚安然), Hao-Miao Yu(于浩淼), Jia-Jun Qin(秦佳俊), Rui-Chen Yi(衣睿宸), Yuan Pei(裴远), Chun-Qin Zhu(朱春琴), Guang-Rui Zhu(朱光瑞), Qi Zeng(曾琪), and Xiao-Yuan Hou(侯晓远) |
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Accurate capacitance-voltage characterization of organic thin films with current injection |
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Chin. Phys. B
2021 Vol.30 (8): 87301-087301
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(469)
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[PDF 974 KB]
(69)
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87102 |
Sheng Wu(武盛), Minhan Mi(宓珉瀚), Xiaohua Ma(马晓华), Ling Yang(杨凌), Bin Hou(侯斌), and Yue Hao(郝跃) |
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High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz |
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Chin. Phys. B
2021 Vol.30 (8): 87102-087102
[Abstract]
(563)
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[PDF 1074 KB]
(184)
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67701 |
Ji-Yao Du(都继瑶), Ji-Yu Zhou(周继禹), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Xin-Zhi Liu(刘新智), and Jin-Ping Ao(敖金平) |
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Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure |
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Chin. Phys. B
2021 Vol.30 (6): 67701-067701
[Abstract]
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(81)
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67804 |
Yue Wang(王玥), Dawei He(何大伟), and Yongsheng Wang(王永生) |
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Enhanced microwave absorption performance of MOF-derived hollow Zn-Co/C anchored on reduced graphene oxide |
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Chin. Phys. B
2021 Vol.30 (6): 67804-067804
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(61)
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67306 |
Xiao Wang(王骁), Yu-Min Zhang(张育民), Yu Xu(徐俞), Zhi-Wei Si(司志伟), Ke Xu(徐科), Jian-Feng Wang(王建峰), and Bing Cao(曹冰) |
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Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE |
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Chin. Phys. B
2021 Vol.30 (6): 67306-067306
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(79)
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67502 |
Yi Liu(刘义), Jun Shen(沈俊), Zunming Lu(卢遵铭), Baogen Shen(沈保根), and Liqin Yan(闫丽琴) |
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Powder x-ray diffraction and Rietveld analysis of (C2H5NH3)2CuCl4 |
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Chin. Phys. B
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57302 |
Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Ang Li(李昂), Kai Liu(刘凯), Yun-Long He(何云龙), Xiao-Li Lu(陆小力) and Yue Hao(郝跃) |
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Ferroelectric effect and equivalent polarization charge model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT |
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Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation |
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Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate |
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High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film |
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Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors |
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Optical polarization characteristics for AlGaN-based light-emitting diodes with AlGaN multilayer structure as well layer |
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Hai-Tao Yu(于海涛), Zi-Han Meng(孟紫寒), Chen Liu(刘晨), Jiang Wang(王江), and Jing Liu(刘静) |
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Effective suppression of beta oscillation in Parkinsonian state via a noisy direct delayed feedback control scheme |
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Stability and optoelectronic property of low-dimensional organic tin bromide perovskites |
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Da-Ping Liu(刘大平), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Shao-Heng Cheng(成绍恒), and Qi-Liang Wang(王启亮) |
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Vertical GaN Shottky barrier diode with thermally stable TiN anode |
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Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment |
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Modeling, simulations, and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes |
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Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation |
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Yan Wang(王岩), Shuai Luo(罗帅), Haiming Ji(季海铭), Di Qu(曲迪), and Yidong Huang(黄翊东) |
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Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition |
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Zi-Kun Cao(曹子坤), De-Gang Zhao(赵德刚), Jing Yang(杨静), Jian-Jun Zhu(朱建军), Feng Liang(梁锋), and Zong-Shun Liu(刘宗顺) |
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A MOVPE method for improving InGaN growth quality by pre-introducing TMIn |
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Jinhui Gao(高金辉), Yehao Li(李叶豪), Yuxuan Hu(胡宇轩), Zhitong Wang(王志通), Anqi Hu(胡安琪), and Xia Guo(郭霞)\ccclink |
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A 2DEG back-gated graphene/AlGaN deep-ultraviolet photodetector with ultrahigh responsivity |
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127802 |
Shou-Qiang Lai(赖寿强), Qing-Xuan Li(李青璇), Hao Long(龙浩), Jin-Zhao Wu(吴瑾照), Lei-Ying Ying(应磊莹), Zhi-Wei Zheng(郑志威), Zhi-Ren Qiu(丘志仁), and Bao-Ping Zhang(张保平) |
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Photoluminescence of green InGaN/GaN MQWs grown on pre-wells |
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Saihu Pan(潘赛虎), Zhiqiang Zhu(朱志强), Kangping Liu(刘康平), Hang Yu(于航), Yingjie Liao(廖英杰), Bin Wei(魏斌), Redouane Borsali, and Kunping Guo(郭坤平) |
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Reliability of organic light-emitting diodes in low-temperature environment |
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2020 Vol.29 (12): 128503-
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Yong Liu(刘勇), Qi Yu(于奇), and Jiang-Feng Du(杜江锋) |
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A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications |
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2020 Vol.29 (12): 127701-
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Si-Qi Jing(荆思淇), Xiao-Hua Ma(马晓华), Jie-Jie Zhu(祝杰杰)†, Xin-Chuang Zhang(张新创), Si-Yu Liu(刘思雨), Qing Zhu(朱青), and Yue Hao(郝跃) |
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Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments |
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Jia-Feng Liu(刘家丰), Ning-Tao Zhang(张宁涛), Yan Teng(滕), Xiu-Jun Hao(郝修军), Yu Zhao(赵宇), Ying Chen(陈影), He Zhu(朱赫), Hong Zhu(朱虹), Qi-Hua Wu(吴启花), Xin Li(李欣), Bai-Le Chen(陈佰乐)§, and Yong Huang(黄勇) |
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Short-wavelength infrared InAs/GaSb superlattice hole avalanche photodiode |
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Fabrication and performance evaluation of GaN thermal neutron detectors with bm6LiF conversion layer |
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98801 |
Brahim Ait Ali, Reda Moubah, Abdelkader Boulezhar, Hassan Lassri |
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Temperature-dependent barrier height inhomogeneities in PTB7:PC71BM-based organic solar cells |
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Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures |
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2020 Vol.29 (8): 87305-087305
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Quan-Jiang Lv(吕全江), Yi-Hong Zhang(张一鸿), Chang-Da Zheng(郑畅达), Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Jun-Lin Liu(刘军林) |
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Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer |
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Ke-Xiu Dong(董可秀), Dun-Jun Chen(陈敦军), Qing Cai(蔡青), Yan-Li liu(刘燕丽), Yu-Jie Wang(王玉杰) |
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Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure |
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Chin. Phys. B
2020 Vol.29 (8): 88502-088502
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Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Kai Liu(刘凯), Ang Li(李昂), Yun-Long He(何云龙), Yue Hao(郝跃) |
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Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators |
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Chin. Phys. B
2020 Vol.29 (8): 87304-087304
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Shixin Hou(侯世欣), Biao Shi(石标), Pengyang Wang(王鹏阳), Yucheng Li(李玉成), Jie Zhang(张杰), Peirun Chen(陈沛润), Bingbing Chen(陈兵兵), Fuhua Hou(侯福华), Qian Huang(黄茜), Yi Ding(丁毅), Yuelong Li(李跃龙), Dekun Zhang(张德坤), Shengzhi Xu(许盛之), Ying Zhao(赵颖), Xiaodan Zhang(张晓丹) |
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Highly efficient bifacial semitransparent perovskite solar cells based on molecular doping of CuSCN hole transport layer |
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Chin. Phys. B
2020 Vol.29 (7): 78801-078801
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67203 |
Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) |
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Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (6): 67203-067203
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67503 |
Tina Raoufi, Yinina Ma(马怡妮娜), Young Sun(孙阳) |
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Critical behavior in the layered organic-inorganic hybrid (CH3NH3)2CuCl4 |
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Chin. Phys. B
2020 Vol.29 (6): 67503-067503
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(648)
[HTML 1 KB]
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Qing-Jun Xu(徐庆君), Shi-Ying Zhang(张士英), Bin Liu(刘斌), Zhen-Hua Li(李振华), Tao Tao(陶涛), Zi-Li Xie(谢自力), Xiang-Qian Xiu(修向前), Dun-Jun Chen(陈敦军), Peng Chen(陈鹏), Ping Han(韩平), Ke Wang(王科), Rong Zhang(张荣), You-Liao Zheng(郑有炓) |
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Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys |
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[PDF 476 KB]
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Hang Song(宋航), Hao Wu(吴昊), Hai-Yang Lu(陆海阳), Zhi-Hao Yang(杨志浩), Long Ba(巴龙) |
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Application of graphene vertical field effect to regulation of organic light-emitting transistors |
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Chin. Phys. B
2020 Vol.29 (5): 57401-057401
[Abstract]
(529)
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[PDF 1772 KB]
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Minhan Mi(宓珉瀚), Meng Zhang(张濛), Sheng Wu(武盛), Ling Yang(杨凌), Bin Hou(侯斌), Yuwei Zhou(周雨威), Lixin Guo(郭立新), Xiaohua Ma(马晓华), Yue Hao(郝跃) |
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High performance InAlN/GaN high electron mobility transistors for low voltage applications |
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Chin. Phys. B
2020 Vol.29 (5): 57307-057307
[Abstract]
(631)
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[PDF 1214 KB]
(191)
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47802 |
Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益) |
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Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection |
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Chin. Phys. B
2020 Vol.29 (4): 47802-047802
[Abstract]
(574)
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Jiao-Xin Guo(郭娇欣), Jie Ding(丁杰), Chun-Lan Mo(莫春兰), Chang-Da Zheng(郑畅达), Shuan Pan(潘拴), Feng-Yi Jiang(江风益) |
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Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate |
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Chin. Phys. B
2020 Vol.29 (4): 47303-047303
[Abstract]
(529)
[HTML 1 KB]
[PDF 1344 KB]
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47104 |
Min-Han Mi(宓珉瀚), Sheng Wu(武盛), Ling Yang(杨凌), Yun-Long He(何云龙), Bin Hou(侯斌), Meng Zhang(张濛), Li-Xin Guo(郭立新), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT |
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Chin. Phys. B
2020 Vol.29 (4): 47104-047104
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48104 |
Minglong Zhao(赵明龙), Xiansheng Tang(唐先胜), Wenxue Huo(霍雯雪), Lili Han(韩丽丽), Zhen Deng(邓震), Yang Jiang(江洋), Wenxin Wang(王文新), Hong Chen(陈弘), Chunhua Du(杜春花), Haiqiang Jia(贾海强) |
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Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate |
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Chin. Phys. B
2020 Vol.29 (4): 48104-048104
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[HTML 1 KB]
[PDF 2637 KB]
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47305 |
Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科) |
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Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination |
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Chin. Phys. B
2020 Vol.29 (4): 47305-047305
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34206 |
Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Feng Liang(梁锋), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群) |
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Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift |
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Chin. Phys. B
2020 Vol.29 (3): 34206-034206
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Shan Ding(丁姗), Yue-Wen Li(李悦文), Xiang-Qian Xiu(修向前), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Peng Chen(陈鹏), Bin Liu(刘斌), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Comparison study of GaN films grown on porous andplanar GaN templates |
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Chin. Phys. B
2020 Vol.29 (3): 38103-038103
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26104 |
Yu-Min Zhang(张育民), Jian-Feng Wang(王建峰), De-Min Cai(蔡德敏), Guo-Qiang Ren(任国强), Yu Xu(徐俞), Ming-Yue Wang(王明月), Xiao-Jian Hu(胡晓剑), Ke Xu(徐科) |
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Growth and doping of bulk GaN by hydride vapor phase epitaxy |
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Chin. Phys. B
2020 Vol.29 (2): 26104-026104
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27201 |
Xin-Lei Geng(耿昕蕾), Xiao-Chuan Xia(夏晓川), Huo-Lin Huang(黄火林), Zhong-Hao Sun(孙仲豪), He-Qiu Zhang(张贺秋), Xing-Zhu Cui(崔兴柱), Xiao-Hua Liang(梁晓华), Hong-Wei Liang(梁红伟) |
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Simulation of GaN micro-structured neutron detectors for improving electrical properties |
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Chin. Phys. B
2020 Vol.29 (2): 27201-027201
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27301 |
Zhong-Xu Wang(王中旭), Lin Du(杜林), Jun-Wei Liu(刘俊伟), Ying Wang(王颖), Yun Jiang(江芸), Si-Wei Ji(季思蔚), Shi-Wei Dong(董士伟), Wei-Wei Chen(陈伟伟), Xiao-Hong Tan(谭骁洪), Jin-Long Li(李金龙), Xiao-Jun Li(李小军), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height |
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Chin. Phys. B
2020 Vol.29 (2): 27301-027301
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18503 |
Byung-Ryool Hyun, Mikita Marus, Huaying Zhong(钟华英), Depeng Li(李德鹏), Haochen Liu(刘皓宸), Yue Xie(谢阅), Weon-kyu Koh, Bing Xu(徐冰), Yanjun Liu(刘言军), Xiao Wei Sun(孙小卫) |
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Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals |
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Chin. Phys. B
2020 Vol.29 (1): 18503-018503
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17303 |
Yan-Qi Li(李彦琪), Hong-Jun Kan(阚洪君), Yuan-Yuan Miao(苗圆圆), Lei Yang(杨磊), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), Gui-Chao Hu(胡贵超) |
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Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions |
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Chin. Phys. B
2020 Vol.29 (1): 17303-017303
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18501 |
Yang Yu(郁扬), Wenjie Hu(胡雯婕), Qiang Li(李强), Qian Shi(时倩), Yinyan Zhu(朱银燕), Hanxuan Lin(林汉轩), Tian Miao(苗田), Yu Bai(白羽), Yanmei Wang(王艳梅), Wenting Yang(杨文婷), Wenbin Wang(王文彬), Hangwen Guo(郭杭闻), Lifeng Yin(殷立峰), Jian Shen(沈健) |
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Visualization of tunnel magnetoresistance effect in single manganite nanowires |
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Chin. Phys. B
2020 Vol.29 (1): 18501-018501
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17302 |
Qian Chen(陈潜), Songhe Yang(杨松鹤), Lei Dong(董磊), Siyuan Cai(蔡思源), Jiaju Xu(许家驹), Zongxiang Xu(许宗祥) |
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Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes |
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Chin. Phys. B
2020 Vol.29 (1): 17302-017302
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(104)
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127701 |
De-Gang Xu(徐德刚), Xian-Li Zhu(朱先立), Yu-Ye Wang(王与烨), Ji-Ning Li(李吉宁), Yi-Xin He(贺奕俽), Zi-Bo Pang(庞子博), Hong-Juan Cheng(程红娟), Jian-Quan Yao(姚建铨) |
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Optical-induced dielectric tunability properties of DAST crystal in THz range |
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Chin. Phys. B
2019 Vol.28 (12): 127701-127701
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117701 |
Yi Liu(刘义), Yan-Fen Chang(畅艳芬), Young Sun(孙阳), Jun Shen(沈俊), Li-Qin Yan(闫丽琴), Zun-Ming Lu(卢遵铭) |
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Electrocaloric effect and pyroelectric properties of organic-inorganic hybrid (C2H5NH3)2CuCl4 |
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Chin. Phys. B
2019 Vol.28 (11): 117701-117701
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118501 |
M Micjan, M Novota, P Telek, M Donoval, M Weis |
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Hunting down the ohmic contact of organic field-effect transistor |
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Chin. Phys. B
2019 Vol.28 (11): 118501-118501
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107301 |
Mei Ge(葛梅), Qing Cai(蔡青), Bao-Hua Zhang(张保花), Dun-Jun Chen(陈敦军), Li-Qun Hu(胡立群), Jun-Jun Xue(薛俊俊), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer |
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Chin. Phys. B
2019 Vol.28 (10): 107301-107301
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90501 |
Fei Gao(高飞), Wen-Qin Li(李文琴), Heng-Qing Tong(童恒庆), Xi-Ling Li(李喜玲) |
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Chaotic analysis of Atangana-Baleanu derivative fractional order Willis aneurysm system |
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Chin. Phys. B
2019 Vol.28 (9): 90501-090501
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98802 |
Yun-Long Deng(邓云龙), Zhi-Yuan Xu(徐知源), Kai Cai(蔡凯), Fei Ma(马飞), Juan Hou(侯娟), Shang-Long Peng(彭尚龙) |
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The effect of Mn-doped ZnSe passivation layer on the performance of CdS/CdSe quantum dot-sensitized solar cells |
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Chin. Phys. B
2019 Vol.28 (9): 98802-098802
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90503 |
Bin-Quan Li(李斌全), Zhi-Xi Wu(吴枝喜), Sheng-Jun Wang(王圣军) |
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Quasi-periodic events on structured earthquake models |
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Chin. Phys. B
2019 Vol.28 (9): 90503-090503
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88103 |
Fei Cheng(程菲), Yue-Wen Li(李悦文), Hong Zhao(赵红), Xiang-Qian Xiu(修向前), Zhi-Tai Jia(贾志泰), Duo Liu(刘铎), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Peng Chen(陈鹏), Bin Liu(刘斌), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Study on the nitridation of β-Ga2O3 films |
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Chin. Phys. B
2019 Vol.28 (8): 88103-088103
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(157)
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87802 |
Qi Wang(王琦), Guo-Dong Yuan(袁国栋), Wen-Qiang Liu(刘文强), Shuai Zhao(赵帅), Lu Zhang(张璐), Zhi-Qiang Liu(刘志强), Jun-Xi Wang(王军喜), Jin-Min Li(李晋闽) |
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Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate |
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Chin. Phys. B
2019 Vol.28 (8): 87802-087802
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86501 |
Shu-Sen Yang(杨树森), Yang Hou(侯阳), Lin-Li Zhu(朱林利) |
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Effects of surface charges on phonon properties and thermal conductivity in GaN nanofilms |
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Chin. Phys. B
2019 Vol.28 (8): 86501-086501
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(126)
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88101 |
Tian-Jiao Liu(刘天娇), Hua-Yan Xia(夏华艳), Biao Liu(刘标), Tim S Jones, Mei Fang(方梅), Jun-Liang Yang(阳军亮) |
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Thin-film growth behavior of non-planar vanadium oxide phthalocyanine |
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Chin. Phys. B
2019 Vol.28 (8): 88101-088101
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(445)
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[PDF 2938 KB]
(169)
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86801 |
Wen-Ting Zhang(张文婷), Fen-Xia Wang(王粉霞), Yu-Miao Li(李玉苗), Xiao-Xing Guo(郭小星), Jian-Hong Yang(杨建红) |
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Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer |
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Chin. Phys. B
2019 Vol.28 (8): 86801-086801
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(108)
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86104 |
Dahua Ren(任达华), Xingyi Tan(谭兴毅), Teng Zhang(张腾), Yuan Zhang(张源) |
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Electronic and optical properties of GaN-MoS2 heterostructure from first-principles calculations |
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Chin. Phys. B
2019 Vol.28 (8): 86104-086104
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(633)
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(276)
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78108 |
Haoran Zhang(张皓然), Qi Zhang(张琪), Qian Zhang(张茜), Huizhi Sun(孙汇智), Gang Hai(海港), Jing Tong(仝静), Haowen Xu(徐浩文), Ruidong Xia(夏瑞东) |
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Polarized red, green, and blue light emitting diodes fabricated with identical device configuration using rubbed PEDOT:PSS as alignment layer |
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Chin. Phys. B
2019 Vol.28 (7): 78108-078108
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[PDF 761 KB]
(156)
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76102 |
Feng Jin(金峰), Jian-Ting Ji(籍建葶), Chao Xie(谢超), Yi-Meng Wang(王艺朦), Shu-Na He(贺淑娜), Lei Zhang(张磊), Zhao-Rong Yang(杨昭荣), Feng Yan(严锋), Qing-Ming Zhang(张清明) |
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Characterization of structural transitions and lattice dynamics of hybrid organic-inorganic perovskite CH3NH3PbI3 |
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Chin. Phys. B
2019 Vol.28 (7): 76102-076102
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(182)
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76101 |
Zhi Chao Zhang(张志超), Bing Yue Zhang(张丙悦), Yu Yan Weng(翁雨燕), Tian Hui Zhang(张天辉) |
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Control on β conformation of poly(9,9-di-n-octylfluorene) via solvent annealing |
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Chin. Phys. B
2019 Vol.28 (7): 76101-076101
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67701 |
Xue Ji(吉雪), Wen-Xiu Dong(董文秀), Yu-Min Zhang(张育民), Jian-Feng Wang(王建峰), Ke Xu(徐科) |
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Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates |
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Chin. Phys. B
2019 Vol.28 (6): 67701-067701
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67305 |
Tian-Ran Zhang(张天然), Fang Fang(方芳), Xiao-Lan Wang(王小兰), Jian-Li Zhang(张建立), Xiao-Ming Wu(吴小明), Shuan Pan(潘栓), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益) |
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Aging mechanism of GaN-based yellow LEDs with V-pits |
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Chin. Phys. B
2019 Vol.28 (6): 67305-067305
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67304 |
Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃) |
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Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2019 Vol.28 (6): 67304-067304
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60701 |
Kang Liu(刘康), Jiwen Zhao(赵继文), Huarui Sun(孙华锐), Huaixin Guo(郭怀新), Bing Dai(代兵), Jiaqi Zhu(朱嘉琦) |
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Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance |
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Chin. Phys. B
2019 Vol.28 (6): 60701-060701
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57802 |
Xuee An(安雪娥), Zhengjun Shang(商正君), Chuanhe Ma(马传贺), Xinhe Zheng(郑新和), Cuiling Zhang(张翠玲), Lin Sun(孙琳), Fangyu Yue(越方禹), Bo Li(李波), Ye Chen(陈晔) |
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Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer |
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Chin. Phys. B
2019 Vol.28 (5): 57802-057802
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56402 |
Feng Yang(杨凤), Cong Wang(王聪), Yuhao Pan(潘宇浩), Xieyu Zhou(周谐宇), Xianghua Kong(孔祥华), Wei Ji(季威) |
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Surface stabilized cubic phase of CsPbI3 and CsPbBr3 at room temperature |
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Chin. Phys. B
2019 Vol.28 (5): 56402-056402
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47302 |
Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Xiao-Can Peng(彭晓灿) |
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Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer |
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Chin. Phys. B
2019 Vol.28 (4): 47302-047302
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38501 |
Wei Gong(龚伟), Tao An(安涛), Xinying Liu(刘欣颖), Gang Lu(卢刚) |
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Realizing photomultiplication-type organic photodetectors based on C60-doped bulk heterojunction structure at low bias |
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Chin. Phys. B
2019 Vol.28 (3): 38501-038501
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38102 |
Jing Pan(潘京), Wei Deng(邓巍), Xiuzhen Xu(徐秀真), Tianhao Jiang(姜天昊), Xiujuan Zhang(张秀娟), Jiansheng Jie(揭建胜) |
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Photodetectors based on small-molecule organic semiconductor crystals |
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Chin. Phys. B
2019 Vol.28 (3): 38102-038102
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(1045)
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36802 |
Wei-Qi Wang(王伟奇), Li Ji(吉利), Hong-Xuan Li(李红轩), Xiao-Hong Liu(刘晓红), Hui-Di Zhou(周惠娣), Jian-Min Chen(陈建敏) |
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Controllable fabrication of self-organized nano-multilayers in copper-carbon films |
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Chin. Phys. B
2019 Vol.28 (3): 36802-036802
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28502 |
Ming-sheng Xu(徐明升), Lei Ge(葛磊), Ming-ming Han(韩明明), Jing Huang(黄静), Hua-yong Xu(徐化勇), Zai-xing Yang(杨再兴) |
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Recent advances in Ga-based solar-blind photodetectors |
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Chin. Phys. B
2019 Vol.28 (2): 28502-028502
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28104 |
Shuang Wang(王爽), Yue-Wen Li(李悦文), Xiang-Qian Xiu(修向前), Li-Ying Zhang(张丽颖), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Bin Liu(刘斌), Peng Chen(陈鹏), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Synthesis and characterization of β-Ga2O3@GaN nanowires |
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Chin. Phys. B
2019 Vol.28 (2): 28104-028104
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(160)
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27302 |
Hao Wu(吴浩), Bao-Xing Duan(段宝兴), Luo-Yun Yang(杨珞云), Yin-Tang Yang(杨银堂) |
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Theoretical analytic model for RESURF AlGaN/GaN HEMTs |
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Chin. Phys. B
2019 Vol.28 (2): 27302-027302
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[PDF 504 KB]
(264)
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27301 |
Sheng-Lei Zhao(赵胜雷), Zhi-Zhe Wang(王之哲), Da-Zheng Chen(陈大正), Mao-Jun Wang(王茂俊), Yang Dai(戴扬), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor |
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Chin. Phys. B
2019 Vol.28 (2): 27301-027301
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(236)
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18102 |
Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition |
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Chin. Phys. B
2019 Vol.28 (1): 18102-018102
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18503 |
Lin-Yuan Wang(王林媛), Wei-Dong Song(宋伟东), Wen-Xiao Hu(胡文晓), Guang Li(李光), Xing-Jun Luo(罗幸君), Hu Wang(汪虎), Jia-Kai Xiao(肖稼凯), Jia-Qi Guo(郭佳琦), Xing-Fu Wang(王幸福), Rui Hao(郝锐), Han-Xiang Yi(易翰翔), Qi-Bao Wu(吴启保), Shu-Ti Li(李述体) |
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Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer |
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Chin. Phys. B
2019 Vol.28 (1): 18503-018503
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17803 |
Ying Li(李营), Zhi-Feng Shi(史志锋), Xin-Jian Li(李新建), Chong-Xin Shan(单崇新) |
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Photodetectors based on inorganic halide perovskites: Materials and devices |
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Chin. Phys. B
2019 Vol.28 (1): 17803-017803
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(653)
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17103 |
Jiayue Han(韩嘉悦), Jun Wang(王军) |
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Photodetectors based on two-dimensional materials and organic thin-film heterojunctions |
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Chin. Phys. B
2019 Vol.28 (1): 17103-017103
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127805 |
Hai-Long Wang(王海龙), Xiao-Han Zhang(张晓涵), Hong-Xia Wang(王红霞), Bin Li(黎斌), Chong Chen(陈冲), Yong-Xian Li(李永贤), Huan Yan(颜欢), Zhi-Sheng Wu(吴志盛), Hao Jiang(江灏) |
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Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas |
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Chin. Phys. B
2018 Vol.27 (12): 127805-127805
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127803 |
Shuang-Tao Liu(刘双韬), Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Yuan Peng(彭莉媛), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫) |
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Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures |
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Chin. Phys. B
2018 Vol.27 (12): 127803-127803
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126101 |
You Wu(吴忧), Xiao-Juan Sun(孙晓娟), Yu-Ping Jia(贾玉萍), Da-Bing Li(黎大兵) |
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Review of improved spectral response of ultraviolet photodetectors by surface plasmon |
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Chin. Phys. B
2018 Vol.27 (12): 126101-126101
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117503 |
Jinbo Yang(杨金波), Wenyun Yang(杨文云), Zhuyin Shao(邵珠印), Dong Liang(梁栋), Hui Zhao(赵辉), Yuanhua Xia(夏元华), Yunbo Yang(杨云波) |
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Mn-based permanent magnets |
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Chin. Phys. B
2018 Vol.27 (11): 117503-117503
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117501 |
Xin-Yu Li(李欣谕), Long Zhao(赵龙), Xiang-Yang Wei(魏向洋), Hao Li(李豪), Ke-Xin Jin(金克新) |
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Review of photoinduced effect in manganite films and their heterostructures |
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Chin. Phys. B
2018 Vol.27 (11): 117501-117501
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107801 |
Zhi-Qi Kou(寇志起), Yu Tang(唐宇), Li-Ping Yang(杨丽萍), Fei-Yu Yang(杨飞宇), Wen-Jun Guo(郭文军) |
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Improvement of electro-optic performances in white organic light emitting diodes with color stability by buffer layer and multiple dopants structure |
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Chin. Phys. B
2018 Vol.27 (10): 107801-107801
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106102 |
Yan-Jun Ji(纪延俊), Jun-Ping Wang(王俊平), You-Wen Liu(刘友文) |
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Effects of Al component content on optoelectronic properties of AlxGa1-xN |
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Chin. Phys. B
2018 Vol.27 (10): 106102-106102
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94208 |
Jun-Jie Hu(胡俊杰), Shu-Ming Zhang(张书明), De-Yao Li(李德尧), Feng Zhang(张峰), Mei-Xin Feng(冯美鑫), Peng-Yan Wen(温鹏雁), Jian-Pin Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉) |
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Thermal analysis of GaN-based laser diode mini-array |
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Chin. Phys. B
2018 Vol.27 (9): 94208-094208
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97308 |
Chong Wang(王冲), Xin Wang(王鑫), Xue-Feng Zheng(郑雪峰), Yun Wang(王允), Yun-Long He(何云龙), Ye Tian(田野), Qing He(何晴), Ji Wu(吴忌), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Characteristics and threshold voltage model of GaN-based FinFET with recessed gate |
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Chin. Phys. B
2018 Vol.27 (9): 97308-097308
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78503 |
Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平) |
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Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2018 Vol.27 (7): 78503-078503
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67202 |
Hao-Miao Yu(于浩淼), Yun He(何鋆) |
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How to characterize capacitance of organic optoelectronic devices accurately |
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Chin. Phys. B
2018 Vol.27 (6): 67202-067202
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67102 |
Miao Jiang(姜淼), Naihang Deng(邓乃航), Li Wang(王丽), Haiming Xie(谢海明), Yongqing Qiu(仇永清) |
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The structural, electronic, and optical properties of organic-inorganic mixed halide perovskites CH3NH3Pb(I1-y Xy)3 (X=Cl, Br) |
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Chin. Phys. B
2018 Vol.27 (6): 67102-067102
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(232)
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58802 |
Hui-Xin Qi(齐慧欣), Bo-Han Yu(余泊含), Sai Liu(刘赛), Miao Zhang(张苗), Xiao-Ling Ma(马晓玲), Jian Wang(王健), Fu-Jun Zhang(张福俊) |
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Efficient ternary organic solar cells with high absorption coefficient DIB-SQ as the third component |
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Chin. Phys. B
2018 Vol.27 (5): 58802-058802
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(237)
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57701 |
Jingjing Wu(吴静静), Xin Tang(唐鑫), Fei Long(龙飞), Biyu Tang(唐壁玉) |
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Effect of O-O bonds on p-type conductivity in Ag-doped ZnO twin grain boundaries |
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Chin. Phys. B
2018 Vol.27 (5): 57701-057701
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47307 |
Ting-Ting Liu(刘婷婷), Kai Zhang(张凯), Guang-Run Zhu(朱广润), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Xin-Xin Yu(郁鑫鑫), Tang-Sheng Chen(陈堂胜) |
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Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs |
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Chin. Phys. B
2018 Vol.27 (4): 47307-047307
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(345)
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47305 |
Wei Mao(毛维), Hai-Yong Wang(王海永), Peng-Hao Shi(石朋毫), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions |
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Chin. Phys. B
2018 Vol.27 (4): 47305-047305
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38702 |
Yang Wang(王洋), Cecylia Severin Lupala, Ting Wang(王亭), Xuanxuan Li(李选选), Ji-Hye Yun, Jae-hyun Park, Zeyu Jin(金泽宇), Weontae Lee, Leihan Tan(汤雷翰), Haiguang Liu(刘海广) |
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A computational study of the chemokine receptor CXCR1 bound with interleukin-8 |
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Chin. Phys. B
2018 Vol.27 (3): 38702-038702
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28101 |
Yao Xing(邢瑶), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Xiang Li(李翔), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ping Chen(陈平), Jing Yang(杨静), Wei Liu(刘炜), Feng Liang(梁锋), Shuang-Tao Liu(刘双韬), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同) |
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Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes |
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Chin. Phys. B
2018 Vol.27 (2): 28101-028101
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27501 |
Yinina Ma(马怡妮娜), Kun Zhai(翟昆), Liqin Yan(闫丽琴), Yisheng Chai(柴一晟), Dashan Shang(尚大山), Young Sun(孙阳) |
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Magnetocaloric effect in the layered organic-inorganic hybrid (CH3NH3)2CuCl4 |
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Chin. Phys. B
2018 Vol.27 (2): 27501-027501
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24208 |
Yu-Long Zhao(赵宇龙), Jin-Feng Wang(王进峰), Ben-Guang Zhao(赵本广), Chen-Chen Jia(贾晨晨), Jun-Peng Mou(牟俊朋), Lei Zhu(朱磊), Jian Song(宋健), Xiu-Quan Gu(顾修全), Ying-Huai Qiang(强颖怀) |
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Fabrication of mixed perovskite organic cation thin films via controllable cation exchange |
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Chin. Phys. B
2018 Vol.27 (2): 24208-024208
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18401 |
Yao Zhao(赵耀), Yi-Cheng Zhao(赵怡程), Wen-Ke Zhou(周文可), Rui Fu(伏睿), Qi Li(李琪), Da-Peng Yu(俞大鹏), Qing Zhao(赵清) |
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Importance of ligands on TiO2 nanocrystals for perovskite solar cells |
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Chin. Phys. B
2018 Vol.27 (1): 18401-018401
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128704 |
Ye Liu(刘野), Qingqing Gao(高庆庆), Yijun Liu(刘益军), Chuang Zhao(赵闯), Zongliang Mao(毛宗良), Lin Hu(胡林), Yanhui Liu(刘艳辉) |
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Enhanced effect of dimension of receptor-ligand complex and depletion effect on receptor-mediated endocytosis of nanoparticles |
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Chin. Phys. B
2017 Vol.26 (12): 128704-128704
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(316)
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123104 |
Tao Lu(鲁桃), Biao Xu(徐彪), Fei-Hong Ye(叶飞宏), Xin-Hui Zhou(周馨慧), Yun-Qing Lu(陆云清), Jin Wang(王瑾) |
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Anisotropic self-diffusion of fluorinated poly(methacrylate) in metal-organic frameworks assessed with molecular dynamics simulation |
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Chin. Phys. B
2017 Vol.26 (12): 123104-123104
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(579)
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[PDF 1918 KB]
(256)
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127102 |
Peng Cui(崔鹏), Zhao-Jun Lin(林兆军), Chen Fu(付晨), Yan Liu(刘艳), Yuan-Jie Lv(吕元杰) |
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Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (12): 127102-127102
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[PDF 495 KB]
(197)
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124210 |
Feng Liang(梁锋), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ping Chen(陈平), Jing Yang(杨静), Wei Liu(刘炜), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同) |
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Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide |
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Chin. Phys. B
2017 Vol.26 (12): 124210-124210
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[PDF 379 KB]
(252)
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118503 |
Lei Cai(蔡磊), Jianzhong Fan(范建忠), Xiangpeng Kong(孔祥朋), Lili Lin(蔺丽丽), Chuan-Kui Wang(王传奎) |
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Luminescent properties of thermally activated delayed fluorescence molecule with intramolecular π-π interaction betweendonor and acceptor |
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Chin. Phys. B
2017 Vol.26 (11): 118503-118503
[Abstract]
(757)
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[PDF 1426 KB]
(272)
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117001 |
Shu-ying Lei(雷疏影), Jian Zhong(钟建), Dian-li Zhou(周殿力), Fang-yun Zhu(朱方云), Chao-xu Deng(邓朝旭) |
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Enhancement of electroluminescent properties of organic optoelectronic integrated device by doping phosphorescent dye |
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Chin. Phys. B
2017 Vol.26 (11): 117001-117001
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(463)
[HTML 1 KB]
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116801 |
Junjun Xue(薛俊俊), Qing Cai(蔡青), Baohua Zhang(张保花), Mei Ge(葛梅), Dunjun Chen(陈敦军), Ting Zhi(智婷), Jiangwei Chen(陈将伟), Lianhui Wang(汪联辉), Rong Zhang(张荣), Youdou Zheng(郑有炓) |
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Structural characterization of indium-rich nanoprecipitate in InGaN V-pits formed by annealing |
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Chin. Phys. B
2017 Vol.26 (11): 116801-116801
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(602)
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[PDF 2165 KB]
(199)
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114203 |
Feng Liang(梁锋), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ping Chen(陈平), Jing Yang(杨静), Wei Liu(刘炜), Xiang Li(李翔), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群), Mo Li(李沫), Jian Zhang(张健) |
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Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes |
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Chin. Phys. B
2017 Vol.26 (11): 114203-114203
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(598)
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[PDF 317 KB]
(207)
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107301 |
Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Lei Yang(杨磊), Yang Wang(王杨) |
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Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier |
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Chin. Phys. B
2017 Vol.26 (10): 107301-107301
[Abstract]
(691)
[HTML 1 KB]
[PDF 349 KB]
(606)
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107102 |
Shuang-Tao Liu(刘双韬), De-Gang Zhao(赵德刚), Jing Yang(杨静), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Xiang Li(李翔), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Qun Zhang(张立群) |
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The residual C concentration control for low temperature growth p-type GaN |
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Chin. Phys. B
2017 Vol.26 (10): 107102-107102
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(592)
[HTML 1 KB]
[PDF 368 KB]
(247)
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97502 |
Qian Li(李潜), Dun-Hui Wang(王敦辉), Qing-Qi Cao(曹庆琪), You-Wei Du(都有为) |
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Nonvolatile control of transport and magnetic properties in magnetoelectric heterostructures by electric field |
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Chin. Phys. B
2017 Vol.26 (9): 97502-097502
[Abstract]
(685)
[HTML 1 KB]
[PDF 497 KB]
(283)
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97104 |
Yan Liu(刘艳), Zhao-Jun Lin(林兆军), Yuan-Jie Lv(吕元杰), Peng Cui(崔鹏), Chen Fu(付晨), Ruilong Han(韩瑞龙), Yu Huo(霍宇), Ming Yang(杨铭) |
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Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (9): 97104-097104
[Abstract]
(650)
[HTML 0 KB]
[PDF 409 KB]
(245)
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98903 |
Qiu-shi Chen(陈秋实), Ming Ji(季铭) |
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Collective motion of active particles in environmental noise |
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Chin. Phys. B
2017 Vol.26 (9): 98903-098903
[Abstract]
(788)
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[PDF 6461 KB]
(230)
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98507 |
Jian Gao(高建), Qian-Qian Yu(于倩倩), Juan Zhang(张娟), Yang Liu(刘洋), Ruo-Fei Jia(贾若飞), Jun Han(韩俊), Xiao-Ming Wu(吴晓明), Yu-Lin Hua(华玉林), Shou-Gen Yin(印寿根) |
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Lowering the driving voltage and improving the luminance of blue fluorescent organic light-emitting devices by thermal annealing a hole injection layer of pentacene |
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Chin. Phys. B
2017 Vol.26 (9): 98507-098507
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(198)
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98504 |
Jianfei Li(李建飞), Yuanjie Lv(吕元杰), Changfu Li(李长富), Ziwu Ji(冀子武), Zhiyong Pang(庞智勇), Xiangang Xu(徐现刚), Mingsheng Xu(徐明升) |
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Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs |
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Chin. Phys. B
2017 Vol.26 (9): 98504-098504
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(621)
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[PDF 937 KB]
(340)
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87311 |
Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Ziguang Ma(马紫光), Haiyan Wu(吴海燕), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘) |
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Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure |
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Chin. Phys. B
2017 Vol.26 (8): 87311-087311
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(939)
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(357)
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87308 |
Linna Zhao(赵琳娜), Peihong Yu(于沛洪), Zixiang Guo(郭子骧), Dawei Yan(闫大为), Hao Zhou(周浩), Jinbo Wu(吴锦波), Zhiqiang Cui(崔志强), Huarui Sun(孙华锐), Xiaofeng Gu(顾晓峰) |
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Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress |
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Chin. Phys. B
2017 Vol.26 (8): 87308-087308
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(714)
[HTML 1 KB]
[PDF 1376 KB]
(241)
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77302 |
Hai-Lin Huang(黄海林), Deng-Jing Wang(王登京), Hong-Rui Zhang(张洪瑞), Hui Zhang(张慧), Chang-Min Xiong(熊昌民), Ji-Rong Sun(孙继荣), Bao-Gen Shen(沈保根) |
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Abundant photoelectronic behaviors of La0.67Sr0.33MnO3/Nb: SrTiO3 junctions |
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Chin. Phys. B
2017 Vol.26 (7): 77302-077302
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[HTML 1 KB]
[PDF 413 KB]
(241)
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78102 |
Zesheng Ji(吉泽生), Lianshan Wang(汪连山), Guijuan Zhao(赵桂娟), Yulin Meng(孟钰淋), Fangzheng Li(李方政), Huijie Li(李辉杰), Shaoyan Yang(杨少延), Zhanguo Wang(王占国) |
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Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition |
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Chin. Phys. B
2017 Vol.26 (7): 78102-078102
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(595)
[HTML 1 KB]
[PDF 1452 KB]
(392)
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77802 |
Wei Li(李维), Peng Jin(金鹏), Wei-Ying Wang(王维颖), De-Feng Mao(毛德丰), Xu Pan(潘旭), Xiao-Liang Wang(王晓亮), Zhan-Guo Wang(王占国) |
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Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer |
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Chin. Phys. B
2017 Vol.26 (7): 77802-077802
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(587)
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[PDF 425 KB]
(247)
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68101 |
Jie Chen(陈杰), Pu-Man Huang(黄溥曼), Xiao-Biao Han(韩小标), Zheng-Zhou Pan(潘郑州), Chang-Ming Zhong(钟昌明), Jie-Zhi Liang(梁捷智), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), Bai-Jun Zhang(张佰君) |
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Influence of adatom migration on wrinkling morphologies of AlGaN/GaN micro-pyramids grown by selective MOVPE |
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Chin. Phys. B
2017 Vol.26 (6): 68101-068101
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(547)
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[PDF 9659 KB]
(239)
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57501 |
Yuan Liu(刘园), Xiang Wang(王翔), Jie Zhu(朱杰), Runsheng Huang(黄润生), Dongming Tang(唐东明) |
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Structure dependence of magnetic properties in yttrium iron garnet by metal-organic decomposition method |
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Chin. Phys. B
2017 Vol.26 (5): 57501-057501
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[PDF 848 KB]
(229)
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48802 |
Hossein Movla, Mohammad Babazadeh |
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A simulation study on p-doping level of polymer host material in P3HT: PCBM bulk heterojunction solar cells |
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Chin. Phys. B
2017 Vol.26 (4): 48802-048802
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[HTML 1 KB]
[PDF 866 KB]
(412)
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47305 |
Hui Wang(王辉), Ning Wang(王宁), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Hai-Yue Zhao(赵海月), Hong-Yu Yu(于洪宇) |
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A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates |
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Chin. Phys. B
2017 Vol.26 (4): 47305-047305
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(773)
[HTML 1 KB]
[PDF 684 KB]
(434)
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47302 |
Zijun Wang(王子君), Juan Zhao(赵娟), Chang Zhou(周畅), Yige Qi(祁一歌), Junsheng Yu(于军胜) |
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Enhancement of Förster energy transfer from thermally activated delayed fluorophores layer to ultrathin phosphor layer for high color stability in non-doped hybrid white organic light-emitting devices |
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Chin. Phys. B
2017 Vol.26 (4): 47302-047302
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47103 |
Yinghui Sun(孙颖慧), Yonggang Zhao(赵永刚), Rongming Wang(王荣明) |
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Electric current-induced giant electroresistance in La0.36Pr0.265Ca0.375MnO3 thin films |
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Chin. Phys. B
2017 Vol.26 (4): 47103-047103
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38104 |
Shitao Liu(刘诗涛), Zhijue Quan(全知觉), Li Wang(王立) |
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Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells |
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Chin. Phys. B
2017 Vol.26 (3): 38104-038104
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37201 |
Lei Wang(王磊), Jiaqi Zhang(张家琦), Liuan Li(李柳暗), Yutaro Maeda(前田裕太郎), Jin-Ping Ao(敖金平) |
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Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (3): 37201-037201
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38503 |
Yin Tang(汤寅), Qing Cai(蔡青), Lian-Hong Yang(杨莲红), Ke-Xiu Dong(董可秀), Dun-Jun Chen(陈敦军), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization |
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Chin. Phys. B
2017 Vol.26 (3): 38503-038503
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24212 |
Ji-Hou Wang(王继厚), Chang-Ming Chen(陈长鸣), Yang Zheng(郑洋), Xi-Bin Wang(王希斌), Yun-Ji Yi(衣云骥), Xiao-Qiang Sun(孙小强), Fei Wang(王菲), Da-Ming Zhang(张大明) |
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Tunable wavelength filters using polymer long-period waveguide gratings based on metal-cladding directly defined technique |
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Chin. Phys. B
2017 Vol.26 (2): 24212-024212
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17805 |
Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫) |
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Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths |
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Chin. Phys. B
2017 Vol.26 (1): 17805-017805
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16103 |
Yanxiong E(鄂炎雄), Zhibiao Hao(郝智彪), Jiadong Yu(余佳东), Chao Wu(吴超), Lai Wang(汪莱), Bing Xiong(熊兵), Jian Wang(王健), Yanjun Han(韩彦军), Changzheng Sun(孙长征), Yi Luo(罗毅) |
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Studies on the nucleation of MBE grown III-nitride nanowires on Si |
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Chin. Phys. B
2017 Vol.26 (1): 16103-016103
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28801 |
Qingxia Fan(范庆霞), Qiang Zhang(张强), Wenbin Zhou(周文斌), Feng Yang(杨丰), Nan Zhang(张楠), Shiqi Xiao(肖仕奇), Xiaogang Gu(谷孝刚), Zhuojian Xiao(肖卓建), Huiliang Chen(陈辉亮), Yanchun Wang(王艳春), Huaping Liu(刘华平), Weiya Zhou(周维亚) |
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Highly conductive and transparent carbon nanotube-based electrodes for ultrathin and stretchable organic solar cells |
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Chin. Phys. B
2017 Vol.26 (2): 28801-028801
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27801 |
Sheng-Rui Xu(许晟瑞), Ying Zhao(赵颖), Ren-Yuan Jiang(蒋仁渊), Teng Jiang(姜腾), Ze-Yang Ren(任泽阳), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Semipolar (1122) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition |
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Chin. Phys. B
2017 Vol.26 (2): 27801-027801
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27302 |
Xiu-Ying Liu(刘秀英), Jing-Xin Yu(于景新), Xiao-Dong Li(李晓东), Gui-Cheng Liu(刘桂成), Xiao-Feng Li(李晓凤), Joong-Kee Lee |
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Effect of metal catalyst on the mechanism of hydrogen spillover in three-dimensional covalent-organic frameworks |
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Chin. Phys. B
2017 Vol.26 (2): 27302-027302
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27105 |
Yong Lei(雷勇), Jing Su(苏静), Hong-Yan Wu(吴红艳), Cui-Hong Yang(杨翠红), Wei-Feng Rao(饶伟锋) |
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On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases |
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Chin. Phys. B
2017 Vol.26 (2): 27105-027105
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17803 |
Feng Xu(徐峰), Peng Chen(陈鹏), Fu-Long Jiang(蒋府龙), Ya-Yun Liu(刘亚云), Zi-Li Xie(谢自立), Xiang-Qian Xiu(修向前), Xue-Mei Hua(华雪梅), Yi Shi(施毅), Rong Zhang(张荣), You-Liao Zheng(郑有炓) |
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High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier |
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Chin. Phys. B
2017 Vol.26 (1): 17803-017803
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17304 |
Ling Yang(杨凌), Xiao-Wei Zhou(周小伟), Xiao-Hua Ma(马晓华), Ling Lv(吕玲), Yan-Rong Cao(曹艳荣), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2017 Vol.26 (1): 17304-017304
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127305 |
Wei Mao(毛维), Ju-Sheng Fan(范举胜), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate |
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Chin. Phys. B
2016 Vol.25 (12): 127305-127305
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117305 |
Yun-Long He(何云龙), Chong Wang(王冲), Min-Han Mi(宓珉瀚), Xue-Feng Zheng(郑雪峰), Meng Zhang(张濛), Meng-Di Zhao(赵梦荻), Heng-Shuang Zhang(张恒爽), Li-Xiang Chen(陈立香), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment |
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Chin. Phys. B
2016 Vol.25 (11): 117305-117305
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117301 |
Miao Geng(耿苗), Pei-Xian Li(李培咸), Wei-Jun Luo(罗卫军), Peng-Peng Sun(孙朋朋), Rong Zhang(张蓉), Xiao-Hua Ma(马晓华) |
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Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method |
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Chin. Phys. B
2016 Vol.25 (11): 117301-117301
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108801 |
Lin Lu(鲁麟), Ming-Chao Li(李明潮), Chen Lv(吕琛), Wen-Gen Gao(高文根), Ming Jiang(江明), Fu-Jun Xu(许福军), Qi-Gong Chen(陈其工) |
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Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers |
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Chin. Phys. B
2016 Vol.25 (10): 108801-108801
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108504 |
Chong Wang(王冲), Meng-Di Zhao(赵梦荻), Yun-Long He(何云龙), Xue-Feng Zheng(郑雪峰), Kun Zhang(张坤), Xiao-Xiao Wei(魏晓晓), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT |
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Chin. Phys. B
2016 Vol.25 (10): 108504-108504
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107803 |
Liang Qiao(乔良), Zi-Guang Ma(马紫光), Hong Chen(陈弘), Hai-Yan Wu(吴海燕), Xue-Fang Chen(陈雪芳), Hao-Jun Yang(杨浩军), Bin Zhao(赵斌), Miao He(何苗), Shu-Wen Zheng(郑树文), Shu-Ti Li(李述体) |
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Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes |
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Chin. Phys. B
2016 Vol.25 (10): 107803-107803
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107501 |
De-Lai Wang(王得来), Ming-Qi Cui(崔明启), Dong-Liang Yang(杨栋亮), Jun-Cai Dong(董俊才), Wei Xu(徐伟) |
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Negative dependence of surface magnetocrystalline anisotropy energy on film thickness in Co33Fe67 alloy |
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Chin. Phys. B
2016 Vol.25 (10): 107501-107501
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97306 |
Bo-Chao Zhao(赵博超), Yang Lu(卢阳), Wen-Zhe Han(韩文哲), Jia-Xin Zheng(郑佳欣), Heng-Shuang Zhang(张恒爽), Pei-jun Ma(马佩军), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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X-band inverse class-F GaN internally-matched power amplifier |
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Chin. Phys. B
2016 Vol.25 (9): 97306-097306
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88505 |
Ping Qin(秦萍), Wei-Dong Song(宋伟东), Wen-Xiao Hu(胡文晓), Yuan-Wen Zhang(张苑文), Chong-Zhen Zhang(张崇臻), Ru-Peng Wang(王汝鹏), Liang-Liang Zhao(赵亮亮), Chao Xia(夏超), Song-Yang Yuan(袁松洋), Yi-an Yin(尹以安), Shu-Ti Li(李述体), Shi-Chen Su(宿世臣) |
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Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer |
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Chin. Phys. B
2016 Vol.25 (8): 88505-088505
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87801 |
Ya-Li Liu(刘雅丽), Peng Jin(金鹏), Gui-Peng Liu(刘贵鹏), Wei-Ying Wang(王维颖), Zhi-Qiang Qi(齐志强), Chang-Qing Chen(陈长清), Zhan-Guo Wang(王占国) |
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Exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells |
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Chin. Phys. B
2016 Vol.25 (8): 87801-087801
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87308 |
Jia-Qi Zhang(张家琦), Lei Wang(王磊), Liu-An Li(李柳暗), Qing-Peng Wang(王青鹏), Ying Jiang(江滢), Hui-Chao Zhu(朱慧超), Jin-Ping Ao(敖金平) |
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Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate |
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Chin. Phys. B
2016 Vol.25 (8): 87308-087308
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87304 |
Xiao-Ling Duan(段小玲), Jin-Cheng Zhang(张进成), Ming Xiao(肖明), Yi Zhao(赵一), Jing Ning(宁静), Yue Hao(郝跃) |
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Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures |
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Chin. Phys. B
2016 Vol.25 (8): 87304-087304
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86502 |
Yang Hou(侯阳), Lin-Li Zhu(朱林利) |
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Influence of surface scattering on the thermal properties of spatially confined GaN nanofilm |
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Chin. Phys. B
2016 Vol.25 (8): 86502-086502
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80701 |
Zubair Ahmad, Farid Touati, Shakoor R A, Al-Thani N J |
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Study of a ternary blend system for bulk heterojunction thin film solar cells |
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Chin. Phys. B
2016 Vol.25 (8): 80701-080701
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77504 |
Dan Wang(王丹), Bingbing Lin(林兵兵), Taipeng Shen(申太鹏), Jun Wu(吴君), Fuhua Hao(豪富华), Chunchao Xia(夏春潮), Qiyong Gong(龚启勇), Huiru Tang(唐惠儒), Bin Song(宋彬), Hua Ai(艾华) |
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Control of the interparticle spacing in superparamagnetic iron oxide nanoparticle clusters by surface ligand engineering |
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Chin. Phys. B
2016 Vol.25 (7): 77504-077504
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67504 |
Jing Wang(王静), Iftikhar Ahmed Malik, Renrong Liang(梁仁荣), Wen Huang(黄文), Renkui Zheng(郑仁奎), Jinxing Zhang(张金星) |
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Nanoscale control of low-dimensional spin structures in manganites |
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Chin. Phys. B
2016 Vol.25 (6): 67504-067504
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67305 |
Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Li-Xiang Chen(陈丽香), Yan-Rong Cao(曹艳荣), Yue Hao(郝跃) |
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Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure |
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Chin. Phys. B
2016 Vol.25 (6): 67305-067305
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67201 |
M Dongol, M M El-Nahass, A El-Denglawey, A A Abuelwafa, T Soga |
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Alternating current characterization of nano-Pt(II) octaethylporphyrin (PtOEP) thin film as a new organic semiconductor |
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Chin. Phys. B
2016 Vol.25 (6): 67201-067201
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67102 |
Zhao-wen Yan(闫兆文), Jiao Wang(王娇), Jian-li Qiao(乔坚栗), Wen-jie Chen(谌文杰), Pan Yang(杨盼), Tong Xiao(肖彤), Jian-hong Yang(杨建红) |
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Numerical simulation study of organic nonvolatile memory with polysilicon floating gate |
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Chin. Phys. B
2016 Vol.25 (6): 67102-067102
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66105 |
Zhi-Yuan Gao(高志远), Xiao-Wei Xue(薛晓玮), Jiang-Jiang Li(李江江), Xun Wang(王勋), Yan-Hui Xing(邢艳辉), Bi-Feng Cui(崔碧峰), De-Shu Zou(邹德恕) |
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Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption |
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Chin. Phys. B
2016 Vol.25 (6): 66105-066105
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57308 |
Gui-Chao Hu(胡贵超), Zhao Zhang(张朝), Ying Li(李营), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎) |
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Length dependence of rectification in organic co-oligomer spin rectifiers |
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Chin. Phys. B
2016 Vol.25 (5): 57308-057308
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54207 |
Wei Dang(党伟), Qing Liao(廖清), Peng-Cheng Mao(毛鹏程), Hong-Bing Fu(付红兵), Yu-Xiang Weng(翁羽翔) |
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Lasing dynamics study by femtosecond time-resolved fluorescence non-collinear optical parametric amplification spectroscopy |
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Chin. Phys. B
2016 Vol.25 (5): 54207-054207
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57703 |
Feng Liang(梁锋), Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zhi-Juan Zhao(赵志娟), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Jing Yang(杨静), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Xiang Li(李翔), Shuang-Tao Liu(刘双韬), Hui Yang(杨辉), Li-Qun Zhang(张立群), Jian-Ping Liu(刘建平), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同) |
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Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC |
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Chin. Phys. B
2016 Vol.25 (5): 57703-057703
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48105 |
Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), Lian-Shan Wang(汪连山) |
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Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE |
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Chin. Phys. B
2016 Vol.25 (4): 48105-048105
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28501 |
Cheng Zhang(张诚), Hui-Qing Sun(孙慧卿), Xu-Na Li(李旭娜), Hao Sun(孙浩), Xuan-Cong Fan(范宣聪), Zhu-Ding Zhang(张柱定), Zhi-You Guo(郭志友) |
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Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers |
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Chin. Phys. B
2016 Vol.25 (2): 28501-028501
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27303 |
Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor |
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Chin. Phys. B
2016 Vol.25 (2): 27303-027303
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(936)
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27102 |
Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ling-Cong Le(乐伶聪), Xiao-Jing Li(李晓静), Xiao-Guang He(何晓光), Li-Qun Zhang(张立群), Hui Yang(杨辉) |
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Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films |
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Chin. Phys. B
2016 Vol.25 (2): 27102-027102
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18802 |
Xiayin Yao(姚霞银), Bingxin Huang(黄冰心), Jingyun Yin(尹景云), Gang Peng(彭刚), Zhen Huang(黄祯), Chao Gao(高超), Deng Liu(刘登), Xiaoxiong Xu(许晓雄) |
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All-solid-state lithium batteries with inorganic solid electrolytes: Review of fundamental science |
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Chin. Phys. B
2016 Vol.25 (1): 18802-018802
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18102 |
Ya-Chao Zhang(张雅超), Xiao-Wei Zhou(周小伟), Sheng-Rui Xu (许晟瑞), Da-Zheng Chen(陈大正), Zhi-Zhe Wang(王之哲), Xing Wang(汪星), Jin-Feng Zhang(张金风), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition |
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Chin. Phys. B
2016 Vol.25 (1): 18102-018102
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17303 |
Wei Mao(毛维), Wei-Bo She(佘伟波), Cui Yang(杨翠), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Yue Hao(郝跃) |
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Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates |
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Chin. Phys. B
2016 Vol.25 (1): 17303-017303
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17601 |
Ying Tian(田英), Shipeng Shen(申世鹏), Junzhuang Cong(丛君状), Liqin Yan(闫丽琴), Yisheng Chai(柴一晟), Young Sun(孙阳) |
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Long-distance super-exchange and quantum magnetic relaxation in a hybrid metal-organic framework |
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Chin. Phys. B
2016 Vol.25 (1): 17601-017601
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128705 |
Karin Nienhaus, G. Ulrich Nienhaus |
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Comparison of ligand migration and binding in heme proteins of the globin family |
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Chin. Phys. B
2015 Vol.24 (12): 128705-128705
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(268)
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127801 |
Liu Wei (刘炜), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Zhu Jian-Jun (朱建军), Li Xiang (李翔), Liang Feng (梁锋), Liu Jian-Ping (刘建平), Yang Hui (杨辉) |
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Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode |
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Chin. Phys. B
2015 Vol.24 (12): 127801-127801
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118102 |
Chen Long (陈龙), Payne Justin (裴嘉鼎), Strate Jan (史达特), Li Cheng (李成), Zhang Jian-Ming (张建明), Yu Wen-Jie (俞文杰), Di Zeng-Feng (狄增峰), Wang Xi (王曦) |
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Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates |
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Chin. Phys. B
2015 Vol.24 (11): 118102-118102
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118101 |
Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Lin Jia-Li (林佳利), Hu Guo-Heng (胡国亨), Liu Ming-Gang (柳铭岗), Yang Yi-Bin (杨亿斌), Chen Jie (陈杰), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君) |
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Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE |
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Chin. Phys. B
2015 Vol.24 (11): 118101-118101
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117307 |
Zhang Sheng (张昇), Wei Ke (魏珂), Yu Le (余乐), Liu Guo-Guo (刘果果), Huang Sen (黄森), Wang Xin-Hua (王鑫华), Pang Lei (庞磊), Zheng Ying-Kui (郑英奎), Li Yan-Kui (李艳奎), Ma Xiao-Hua (马晓华), Sun Bing (孙兵), Liu Xin-Yu (刘新宇) |
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AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation |
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Chin. Phys. B
2015 Vol.24 (11): 117307-117307
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[PDF 1534 KB]
(577)
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117305 |
Luo Jun (罗俊), Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Yang Xiao-Lei (杨晓蕾), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors |
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Chin. Phys. B
2015 Vol.24 (11): 117305-117305
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(765)
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[PDF 339 KB]
(581)
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117103 |
Yang Ming (杨铭), Lin Zhao-Jun (林兆军), Zhao Jing-Tao (赵景涛), Wang Yu-Tang (王玉堂), Li Zhi-Yuan (李志远), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红) |
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Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors |
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Chin. Phys. B
2015 Vol.24 (11): 117103-117103
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116302 |
Yuan Ye (袁野), Xu Run (徐闰), Xu Hai-Tao (徐海涛), Hong Feng (洪峰), Xu Fei (徐飞), Wang Lin-Jun (王林军) |
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Nature of the band gap of halide perovskites ABX3 (A= CH3NH3, Cs; B= Sn, Pb; X= Cl, Br, I): First-principles calculations |
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Chin. Phys. B
2015 Vol.24 (11): 116302-116302
[Abstract]
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[PDF 1327 KB]
(1898)
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116102 |
Khasan S. Karimov, Zubair Ahmad, Farid Touati, M. Mahroof-Tahir, M. Muqeet Rehman, S. Zameer Abbas |
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Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction |
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Chin. Phys. B
2015 Vol.24 (11): 116102-116102
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[PDF 547 KB]
(232)
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115202 |
Peng Ling (彭玲), Mei Yang (梅杨), Chen Shu-Fen (陈淑芬), Zhang Yu-Pei (张玉佩), Hao Jing-Yu (郝敬昱), Deng Ling-Ling (邓玲玲), Huang Wei (黄维) |
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Au nanorods-incorporated plasmonic-enhanced inverted organic solar cells |
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Chin. Phys. B
2015 Vol.24 (11): 115202-115202
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[PDF 1524 KB]
(415)
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108501 |
Zhu Jian-Zhuo (朱键卓), Qi Ling-Hui (祁令辉), Du Hui-Jing (杜会静), Chai Ying-Chun (柴莺春) |
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Simulation study of the losses and influences of geminate and bimolecular recombination on the performances of bulk heterojunction organic solar cells |
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Chin. Phys. B
2015 Vol.24 (10): 108501-108501
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[PDF 1300 KB]
(392)
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107305 |
Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Lu Yang (卢阳), Zhao Bo-Chao (赵博超), Zhang Hong-He (张宏鹤), Zhang Meng (张濛), Cao Meng-Yi (曹梦逸), Hao Yue (郝跃) |
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A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT |
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Chin. Phys. B
2015 Vol.24 (10): 107305-107305
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[PDF 897 KB]
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108101 |
Zhao Dan-Mei (赵丹梅), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Zhu Jian-Jun (朱建军), Chen Ping (陈平), Liu Wei (刘炜), Li Xiang (李翔), Shi Ming (侍铭) |
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Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate |
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Chin. Phys. B
2015 Vol.24 (10): 108101-108101
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(730)
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[PDF 288 KB]
(447)
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107304 |
Wang Xiao-Bo (王小波), Li Yong (李勇), Yan Ling-Ling (闫玲玲), Li Xin-Jian (李新建) |
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Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array |
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Chin. Phys. B
2015 Vol.24 (10): 107304-107304
[Abstract]
(752)
[HTML 1 KB]
[PDF 421 KB]
(410)
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107102 |
Ma Jun-Jie (马俊杰), Wang Deng-Jing (王登京), Huang Hai-Lin (黄海林), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝) |
| |
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Nano LaAlO3 buffer layer-assisted tunneling current in manganite p-n heterojunction |
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Chin. Phys. B
2015 Vol.24 (10): 107102-107102
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(683)
[HTML 1 KB]
[PDF 371 KB]
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96103 |
Yang Yi-Bin (杨亿斌), Liu Ming-Gang (柳铭岗), Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Chen Jie (陈杰), Lin Xiu-Qi (林秀其), Lin Jia-Li (林佳利), Luo Hui (罗慧), Liao Qiang (廖强), Zang Wen-Jie (臧文杰), Chen Yin-Song (陈崟松), Qiu Yun-Ling (邱运灵), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君) |
| |
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In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system |
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Chin. Phys. B
2015 Vol.24 (9): 96103-096103
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[HTML 1 KB]
[PDF 527 KB]
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97401 |
Wang Hong-Yan (王洪艳), Ding Fa-Zhu (丁发柱), Gu Hong-Wei (古宏伟), Zhang Teng (张腾) |
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Strongly enhanced flux pinning in the YBa2Cu3O7-X films with the co-doping of BaTiO3 nanorod and Y2O3 nanoparticles at 65 K |
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Chin. Phys. B
2015 Vol.24 (9): 97401-097401
[Abstract]
(499)
[HTML 1 KB]
[PDF 655 KB]
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97303 |
Zhong Jian (钟健), Yao Yao (姚尧), Zheng Yue (郑越), Yang Fan (杨帆), Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Shen Zhen (沈震), Zhou Gui-Lin (周桂林), Zhou De-Qiu (周德秋), Wu Zhi-Sheng (吴志盛), Zhang Bai-Jun (张伯君), Liu Yang (刘扬) |
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Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode |
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Chin. Phys. B
2015 Vol.24 (9): 97303-097303
[Abstract]
(935)
[HTML 1 KB]
[PDF 601 KB]
(567)
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96804 |
Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光), Zhang Li-Qun (张立群), Liu Jian-Ping (刘建平), Zhang Shu-Ming (张书明), Yang Hui (杨辉) |
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Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN |
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Chin. Phys. B
2015 Vol.24 (9): 96804-096804
[Abstract]
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[HTML 1 KB]
[PDF 330 KB]
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96802 |
He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zhu Jian-Jun (朱建军), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), Li Xiao-Jing (李晓静), Zhang Shu-Ming (张书明), Yang Hui (杨辉) |
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Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure |
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Chin. Phys. B
2015 Vol.24 (9): 96802-096802
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[PDF 231 KB]
(415)
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87306 |
Lv Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Fang Yu-Long (房玉龙), Wang Yuan-Gang (王元刚), Tan Xin (谭鑫), Zhou Xing-Ye (周幸叶), Lin Zhao-Jun (林兆军), Ji Zi-Wu (冀子武), Cai Shu-Jun (蔡树军) |
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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor |
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Chin. Phys. B
2015 Vol.24 (8): 87306-087306
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87305 |
Huang Jie (黄杰), Li Ming (黎明), Zhao Qian (赵倩), Gu Wen-Wen (顾雯雯), Lau Kei-May (刘纪美) |
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Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications |
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Chin. Phys. B
2015 Vol.24 (8): 87305-087305
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[PDF 574 KB]
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78102 |
Huang Jie (黄杰), Li Ming (黎明), Lau Kei-May (刘纪美) |
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Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD |
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Chin. Phys. B
2015 Vol.24 (7): 78102-078102
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[PDF 888 KB]
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77801 |
Yu Lei (于磊), Zhang Yuan-Wen (张苑文), Li Kai (李凯), Pi Hui (皮辉), Diao Jia-Sheng (刁家声), Wang Xing-Fu (王幸福), Hu Wen-Xiao (胡文晓), Zhang Chong-Zhen (张崇臻), Song Wei-Dong (宋伟东), Shen Yue (沈岳), Li Shu-Ti (李述体) |
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Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates |
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Chin. Phys. B
2015 Vol.24 (7): 77801-077801
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77308 |
Hu Gui-Chao (胡贵超), Zuo Meng-Ying (左梦莹), Li Ying (李营), Zhang Zhao (张朝), Ren Jun-Feng (任俊峰), Wang Chuan-Kui (王传奎) |
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Effect of interfacial coupling on rectification in organic spin rectifiers |
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Chin. Phys. B
2015 Vol.24 (7): 77308-077308
[Abstract]
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[PDF 434 KB]
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76803 |
He Xiao-Chuan (何小川), Yang Jian-Bing (杨建兵), Yan Dong-Hang (闫东航), Weng Yu-Xiang (翁羽翔) |
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New method for fast morphological characterization of organic polycrystalline films by polarized optical microscopy |
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Chin. Phys. B
2015 Vol.24 (7): 76803-076803
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(505)
[HTML 1 KB]
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68506 |
Zhao Li-Xia (赵丽霞), Yu Zhi-Guo (于治国), Sun Bo (孙波), Zhu Shi-Chao (朱石超), An Ping-Bo (安平博), Yang Chao (杨超), Liu Lei (刘磊), Wang Jun-Xi (王军喜), Li Jin-Min (李晋闽) |
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Progress and prospects of GaN-based LEDs using nanostructures |
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Chin. Phys. B
2015 Vol.24 (6): 68506-068506
[Abstract]
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68106 |
Wu Jie-Jun (吴洁君), Wang Kun (王昆), Yu Tong-Jun (于彤军), Zhang Guo-Yi (张国义) |
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GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges |
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2015 Vol.24 (6): 68106-068106
[Abstract]
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[HTML 1 KB]
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67305 |
Xu Hua-Yong (徐化勇), Chen Xiu-Fang (陈秀芳), Peng Yan (彭燕), Xu Ming-Sheng (徐明升), Shen Yan (沈燕), Hu Xiao-Bo (胡小波), Xu Xian-Gang (徐现刚) |
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Progress in research of GaN-based LEDs fabricated on SiC substrate |
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Chin. Phys. B
2015 Vol.24 (6): 67305-067305
[Abstract]
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[HTML 1 KB]
[PDF 2886 KB]
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66105 |
Xu Ke (徐科), Wang Jian-Feng (王建峰), Ren Guo-Qiang (任国强) |
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Progress in bulk GaN growth |
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Chin. Phys. B
2015 Vol.24 (6): 66105-066105
[Abstract]
(701)
[HTML 1 KB]
[PDF 938 KB]
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68503 |
Liu Ming-Gang (柳铭岗), Yang Yi-Bin (杨亿斌), Xiang Peng (向鹏), Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Lin Xiu-Qi (林秀其), Lin Jia-Li (林佳利), Luo Hui (罗慧), Liao Qiang (廖强), Zang Wen-Jie (臧文杰), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君) |
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Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates |
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Chin. Phys. B
2015 Vol.24 (6): 68503-068503
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67804 |
Liu Jun-Lin (刘军林), Zhang Jian-Li (张建立), Wang Guang-Xu (王光绪), Mo Chun-Lan (莫春兰), Xu Long-Quan (徐龙权), Ding Jie (丁杰), Quan Zhi-Jue (全知觉), Wang Xiao-Lan (王小兰), Pan Shuan (潘拴), Zheng Chang-Da (郑畅达), Wu Xiao-Ming (吴小明), Fang Wen-Qing (方文卿), Jiang Feng-Yi (江风益) |
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Status of GaN-based green light-emitting diodes |
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Chin. Phys. B
2015 Vol.24 (6): 67804-067804
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[HTML 1 KB]
[PDF 1200 KB]
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67503 |
Qiu Qing-Wei (邱庆伟), Xu Xiao-Wen (徐晓文), He Mang (何芒), Zhang Hong-Wang (张洪旺) |
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Radio-frequency-heating capability of silica-coated manganese ferrite nanoparticles |
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Chin. Phys. B
2015 Vol.24 (6): 67503-067503
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[PDF 478 KB]
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67303 |
Wang Lai (汪莱), Yang Di (杨迪), Hao Zhi-Biao (郝智彪), Luo Yi (罗毅) |
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Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes |
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2015 Vol.24 (6): 67303-067303
[Abstract]
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[HTML 1 KB]
[PDF 1149 KB]
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67301 |
He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生) |
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Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression |
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Chin. Phys. B
2015 Vol.24 (6): 67301-067301
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[PDF 473 KB]
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57801 |
Liu Jian-Ming (刘建明), Zhang Jie (张洁), Lin Wen-Yu (林文禹), Ye Meng-Xin (叶孟欣), Feng Xiang-Xu (冯向旭), Zhang Dong-Yan (张东炎), Steve Ding, Xu Chen-Ke (徐宸科), Liu Bao-Lin (刘宝林) |
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Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates |
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Chin. Phys. B
2015 Vol.24 (5): 57801-057801
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58502 |
Fu Zong-Yuan (浮宗元), Zhang Jian-Chi (张剑驰), Hu Jing-Hang (胡静航), Jiang Yu-Long (蒋玉龙), Ding Shi-Jin (丁士进), Zhu Guo-Dong (朱国栋) |
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Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors |
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Chin. Phys. B
2015 Vol.24 (5): 58502-058502
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57802 |
Miao Yan-Qin (苗艳勤), Gao Zhi-Xiang (高志翔), Zhang Ai-Qin (张爱琴), Li Yuan-Hao (李源浩), Wang Hua (王华), Jia Hu-Sheng (贾虎生), Liu Xu-Guang (刘旭光), Tsuboi Taiju |
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High color rendering index white organic light-emitting diode using levofloxacin as blue emitter |
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Chin. Phys. B
2015 Vol.24 (5): 57802-057802
[Abstract]
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[PDF 496 KB]
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57501 |
Hou Xue (侯雪), Ji Deng-Hui (纪登辉), Qi Wei-Hua (齐伟华), Tang Gui-De (唐贵德), Li Zhuang-Zhi (李壮志) |
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Structural and magnetic properties of La0.7Sr0.1AgxMnO3-δ perovskite manganites |
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Chin. Phys. B
2015 Vol.24 (5): 57501-057501
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57304 |
Liu Yuan-Bo (刘渊博), Wang Shuan-Hu (王拴虎), Sun Ji-Rong (孙继荣), Shen Bao-Gen (沈保根) |
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Anisotropic transport properties of charge-ordered La5/8-yPryCa3/8MnO3 (y=0.43) film |
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Chin. Phys. B
2015 Vol.24 (5): 57304-057304
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57303 |
Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Yao Yao (姚尧), Yang Fan (杨帆), Zhou De-Qiu (周德秋), Zhou Gui-Lin (周桂林), Shen Zhen (沈震), Zhong Jian (钟健), Zheng Yue (郑越), Zhang Bai-Jun (张佰君), Liu Yang (刘扬) |
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Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate |
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Chin. Phys. B
2015 Vol.24 (5): 57303-057303
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[PDF 614 KB]
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56103 |
Lei Zhi-Feng (雷志锋), Guo Hong-Xia (郭红霞), Zeng Chang (曾畅), Chen Hui (陈辉), Wang Yuan-Sheng (王远声), Zhang Zhan-Gang (张战刚) |
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Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs |
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Chin. Phys. B
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47203 |
Muhammad Ammar Khan, Sun Jiu-Xun (孙久勋) |
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Improvement of mobility edge model by using new density of states with exponential tail for organic diode |
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Chin. Phys. B
2015 Vol.24 (4): 47203-047203
[Abstract]
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48503 |
Zhou Xing-Ye (周幸叶), Feng Zhi-Hong (冯志红), Wang Yuan-Gang (王元刚), Gu Guo-Dong (顾国栋), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军) |
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Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor |
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Chin. Phys. B
2015 Vol.24 (4): 48503-048503
[Abstract]
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37802 |
Xin Li-Wen (辛利文), Wu Xiao-Ming (吴晓明), Hua Yu-Lin (华玉林), Xiao Zhi-Hui (肖志慧), Wang Li (王丽), Zhang Xin (张欣), Yin Shou-Gen (印寿根) |
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Improvement of electron injection of organic light-emitting devices by inserting a thin aluminum layer into cesium carbonate injection layer |
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Chin. Phys. B
2015 Vol.24 (3): 37802-037802
[Abstract]
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37304 |
Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Hou Bin (侯斌), Wang Chong (王冲), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors |
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Chin. Phys. B
2015 Vol.24 (3): 37304-037304
[Abstract]
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28505 |
Wu Shuang-Hong (吴双红), Li Wen-Lian (李文连), Chen Zhi (陈志), Li Shi-Bin (李世彬), Wang Xiao-Hui (王晓晖), Wei Xiong-Bang (魏雄邦) |
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Energy transfer ultraviolet photodetector with 8-hydroxyquinoline derivative-metal complexes as acceptors |
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Chin. Phys. B
2015 Vol.24 (2): 28505-028505
[Abstract]
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27101 |
Ma Xiao-Hua (马晓华), Zhang Ya-Man (张亚嫚), Wang Xin-Hua (王鑫华), Yuan Ting-Ting (袁婷婷), Pang Lei (庞磊), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
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Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values |
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Chin. Phys. B
2015 Vol.24 (2): 27101-027101
[Abstract]
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26802 |
Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Zhang Qian (张谦), Meng Xiang-Yue (孟祥岳), Yang Shao-Yan (杨少延), Zhao Gui-Juan (赵桂娟), Li Hui-Jie (李辉杰), Wei Hong-Yuan (魏鸿源), Wang Zhan-Guo (王占国) |
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Effect of the thickness of InGaN interlayer on a-plane GaN epilayer |
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Chin. Phys. B
2015 Vol.24 (2): 26802-026802
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27801 |
Zheng Yan-Qiong (郑燕琼), William J. Potscavage Jr, Zhang Jian-Hua (张建华), Wei Bin (魏斌), Huang Rong-Juan (黄荣娟) |
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Hole transporting material 5, 10, 15-tribenzyl-5H-diindolo[3, 2-a:3',2'-c]-carbazole for efficient optoelectronic applications as an active layer |
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Chin. Phys. B
2015 Vol.24 (2): 27801-027801
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27303 |
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment |
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Chin. Phys. B
2015 Vol.24 (2): 27303-027303
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27302 |
Zheng Xue-Feng (郑雪峰), Fan Shuang (范爽), Chen Yong-He (陈永和), Kang Di (康迪), Zhang Jian-Kun (张建坤), Wang Chong (王冲), Mo Jiang-Hui (默江辉), Li Liang (李亮), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation |
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Chin. Phys. B
2015 Vol.24 (2): 27302-027302
[Abstract]
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24219 |
Wang Qiang (王强), Ji Zi-Wu (冀子武), Wang Fan (王帆), Mu Qi (牟奇), Zheng Yu-Jun (郑雨军), Xu Xian-Gang (徐现刚), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红) |
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Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells |
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Chin. Phys. B
2015 Vol.24 (2): 24219-024219
[Abstract]
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[PDF 484 KB]
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18102 |
Wang Lian-Kai (王连锴), Liu Ren-Jun (刘仁俊), Lü You (吕游), Yang Hao-Yu (杨皓宇), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林) |
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High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition |
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Chin. Phys. B
2015 Vol.24 (1): 18102-018102
[Abstract]
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17302 |
Zhao Yi (赵一), Zhang Jin-Cheng (张进成), Xue Jun-Shuai (薛军帅), Zhou Xiao-Wei (周小伟), Xu Sheng-Rui (许晟瑞), Hao Yue (郝跃) |
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Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys |
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Chin. Phys. B
2015 Vol.24 (1): 17302-017302
[Abstract]
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[PDF 456 KB]
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127304 |
Pongthavornkamol Tiwat (林体元), Pang Lei (庞磊), Yuan Ting-Ting (袁婷婷), Liu Xin-Yu (刘新宇) |
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Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method |
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Chin. Phys. B
2014 Vol.23 (12): 127304-127304
[Abstract]
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114703 |
Zhang He-Peng (张何朋), Liu Bin (刘斌), Bruce Rodenborn, Harry L. Swinney |
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Propulsive matrix of a helical flagellum |
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Chin. Phys. B
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[Abstract]
(717)
[HTML 1 KB]
[PDF 456 KB]
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117306 |
E. Yağlıoğlu, Ö. Tüzün Özmen |
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F4-TCNQ concentration dependence of the current–voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode |
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Chin. Phys. B
2014 Vol.23 (11): 117306-117306
[Abstract]
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[HTML 1 KB]
[PDF 367 KB]
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128102 |
Huang Jie (黄杰), Li Ming (黎明), Tang Chak-Wah (邓泽华), Lau Kei-May (刘纪美) |
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Lg=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD |
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Chin. Phys. B
2014 Vol.23 (12): 128102-128102
[Abstract]
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127104 |
Zhao Jing-Tao (赵景涛), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志宏), Yang Ming (杨铭) |
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Effects of GaN cap layer thickness on an AlN/GaN heterostructure |
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Chin. Phys. B
2014 Vol.23 (12): 127104-127104
[Abstract]
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118507 |
Ma Li (马莉), Shen Guang-Di (沈光地), Liu Jian-Peng (刘建朋), Gao Zhi-Yuan (高志远), Xu Chen (徐晨), Wang Xun (王勋) |
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Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes |
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Chin. Phys. B
2014 Vol.23 (11): 118507-118507
[Abstract]
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118508 |
Liao Ying-Jie (廖英杰), Lou Yan-Hui (娄艳辉), Wang Zhao-Kui (王照奎), Liao Liang-Sheng (廖良生) |
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Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode |
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Chin. Phys. B
2014 Vol.23 (11): 118508-118508
[Abstract]
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117803 |
Wang Wei-Ying (王维颖), Liu Gui-Peng (刘贵鹏), Jin Peng (金鹏), Mao De-Feng (毛德丰), Li Wei (李维), Wang Zhan-Guo (王占国), Tian Wu (田武), Chen Chang-Qing (陈长清) |
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Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells |
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Chin. Phys. B
2014 Vol.23 (11): 117803-117803
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(495)
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108703 |
Huang Xu-Hui (黄旭辉), Hu Gang (胡岗) |
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Plasticity-induced characteristic changes of pattern dynamics and the related phase transitions in small-world neuronal networks |
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Chin. Phys. B
2014 Vol.23 (10): 108703-108703
[Abstract]
(570)
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[PDF 3965 KB]
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107803 |
Xing Hai-Ying (邢海英), Xu Zhang-Cheng (徐章程), Cui Ming-Qi (崔明启), Xie Yu-Xin (谢玉芯), Zhang Guo-Yi (张国义) |
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Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition |
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Chin. Phys. B
2014 Vol.23 (10): 107803-107803
[Abstract]
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[PDF 289 KB]
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106106 |
Huang Cheng-Cheng (黄呈橙), Zhang Xia (张霞), Xu Fu-Jun (许福军), Xu Zheng-Yu (许正昱), Chen Guang (陈广), Yang Zhi-Jian (杨志坚), Tang Ning (唐宁), Wang Xin-Qiang (王新强), Shen Bo (沈波) |
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Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template |
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Chin. Phys. B
2014 Vol.23 (10): 106106-106106
[Abstract]
(552)
[HTML 1 KB]
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(490)
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107303 |
Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Luo Jun (罗俊), Wang Yi (王毅), Dai Yang (戴杨), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain |
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Chin. Phys. B
2014 Vol.23 (10): 107303-107303
[Abstract]
(491)
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107101 |
Li Shi-Bin (李世彬), Yu Hong-Ping (余宏萍), Zhang Ting (张婷), Chen Zhi (陈志), Wu Zhi-Ming (吴志明) |
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Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction |
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Chin. Phys. B
2014 Vol.23 (10): 107101-107101
[Abstract]
(439)
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[PDF 392 KB]
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97103 |
Cui Li-Min (崔丽敏), Li Jie (李洁), Wang Jia (王佳), Zhang Yu (张玉), Zheng Dong-Ning (郑东宁) |
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Emergent reversible giant electroresistance in spacially confined La0.325Pr0.3Ca0.375MnO3 wires |
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Chin. Phys. B
2014 Vol.23 (9): 97103-097103
[Abstract]
(691)
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[PDF 490 KB]
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96801 |
Wang Huan (王欢), Yao Shu-De (姚淑德) |
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Characterization of tetragonal distortion in a thick Al0.2Ga0.8N epilayer with an AlN interlayer by Rutherford backscattering/channeling |
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Chin. Phys. B
2014 Vol.23 (9): 96801-096801
[Abstract]
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96203 |
Tao Tao (陶涛), Zhi Ting (智婷), Li Ming-Xue (李民雪), Xie Zi-Li (谢自力), Zhang Rong (张荣), Liu Bin (刘斌), Li Yi (李毅), Zhuang Zhe (庄喆), Zhang Guo-Gang (张国刚), Jiang Fu-Long (蒋府龙), Chen Peng (陈鹏), Zheng You-Dou (郑有炓) |
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Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask |
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Chin. Phys. B
2014 Vol.23 (9): 96203-096203
[Abstract]
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97306 |
Yang Fu-Jiang (杨福江), Xie Shi-Jie (解士杰) |
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Organic magnetoresistance based on hopping theory |
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Chin. Phys. B
2014 Vol.23 (9): 97306-097306
[Abstract]
(631)
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[PDF 355 KB]
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97304 |
Hassen Dakhlaoui |
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Intersubband transitions in InxAl(1-x)N/InyGa(1-y)Nquantum well operating at 1.55 μm |
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Chin. Phys. B
2014 Vol.23 (9): 97304-097304
[Abstract]
(446)
[HTML 1 KB]
[PDF 259 KB]
(452)
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98501 |
Cui Li-Min (崔丽敏), Li Jie (李洁), Zhang Yu (张玉), Zhao Lu (赵璐), Deng Hui (邓辉), Huang Ke-Qiang (黄克强), Li He-Kang (李贺康), Zheng Dong-Ning (郑东宁) |
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Tuning the phase separation in La0.325Pr0.3Ca0.375MnO3 using theelectric double-layer field effect |
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Chin. Phys. B
2014 Vol.23 (9): 98501-098501
[Abstract]
(639)
[HTML 1 KB]
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97307 |
Wu Mei (武玫), Zheng Da-Yong (郑大勇), Wang Yuan (王媛), Chen Wei-Wei (陈伟伟), Zhang Kai (张凯), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range |
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Chin. Phys. B
2014 Vol.23 (9): 97307-097307
[Abstract]
(719)
[HTML 1 KB]
[PDF 315 KB]
(1547)
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97305 |
Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (9): 97305-097305
[Abstract]
(595)
[HTML 1 KB]
[PDF 1027 KB]
(903)
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97201 |
He Yun (何鋆), Chen Xiao-Qing (陈小青), Hou Xiao-Yuan (侯晓远) |
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Effect of traps’adjacency on the electric field dependence of mobility in organic systems |
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Chin. Phys. B
2014 Vol.23 (9): 97201-097201
[Abstract]
(532)
[HTML 1 KB]
[PDF 281 KB]
(392)
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97308 |
Jiang Chao (蒋超), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Dou (郑有炓) |
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Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate |
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Chin. Phys. B
2014 Vol.23 (9): 97308-097308
[Abstract]
(736)
[HTML 1 KB]
[PDF 1081 KB]
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88803 |
Lu Chun-Xi (路春希), Yan Peng (闫鹏), Wang Jin-Ze (王金泽), Liu Ai-Min (刘爱民), Song De (宋德), Jiang Chao (江潮) |
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Photoinduced degradation of organic solar cells with different microstructures |
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Chin. Phys. B
2014 Vol.23 (8): 88803-088803
[Abstract]
(586)
[HTML 1 KB]
[PDF 725 KB]
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87201 |
Cao Meng-Yi (曹梦逸), Lu Yang (卢阳), Wei Jia-Xing (魏家行), Chen Yong-He (陈永和), Li Wei-Jun (李卫军), Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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An improved EEHEMT model for kink effect on AlGaN/GaN HEMT |
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Chin. Phys. B
2014 Vol.23 (8): 87201-087201
[Abstract]
(830)
[HTML 1 KB]
[PDF 446 KB]
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87306 |
Zuo Meng-Ying (左梦莹), Hu Gui-Chao (胡贵超), Li Ying (李营), Ren Jun-Feng (任俊峰), Wang Chuan-Kui (王传奎) |
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Spin-excited states and rectification in an organic spin rectifier |
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Chin. Phys. B
2014 Vol.23 (8): 87306-087306
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[PDF 570 KB]
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87305 |
Mao Wei (毛维), She Wei-Bo (佘伟波), Yang Cui (杨翠), Zhang Chao (张超), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Zhang Jin-Feng (张金风), Liu Hong-Xia (刘红侠), Yang Lin-An (杨林安), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Chen Yong-He (陈永和), Zheng Xue-Feng (郑雪峰), Hao Yue (郝跃) |
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A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor |
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Chin. Phys. B
2014 Vol.23 (8): 87305-087305
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(525)
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83302 |
Sun Qian-Qian (孙倩倩), An Qiao-Shi (安桥石), Zhang Fu-Jun (张福俊) |
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A simple encapsulation method for organic optoelectronic devices |
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Chin. Phys. B
2014 Vol.23 (8): 83302-083302
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(655)
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[PDF 443 KB]
(392)
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77304 |
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage |
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Chin. Phys. B
2014 Vol.23 (7): 77304-077304
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(616)
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[PDF 433 KB]
(532)
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77105 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Guo Hong-Yu (郭红雨), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Wang Yuan-Gang (王元刚), Xu Peng (徐鹏), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军) |
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Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2014 Vol.23 (7): 77105-077105
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(647)
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[PDF 269 KB]
(405)
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77802 |
Wei Na (魏娜), Guo Kun-Ping (郭坤平), Zhou Peng-Chao (周朋超), Yu Jian-Ning (于建宁), Wei Bin (魏斌), Zhang Jian-Hua (张建华) |
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Pure blue and white light electroluminescence in a multilayer organic light-emitting diode using a new blue emitter |
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Chin. Phys. B
2014 Vol.23 (7): 77802-077802
[Abstract]
(486)
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[PDF 2175 KB]
(815)
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77601 |
He Li-Min (何利民), Ji Yu (冀钰), Wu Hong-Ye (吴鸿业), Xu Bao (徐宝), Sun Yun-Bin (孙运斌), Zhang Xue-Feng (张雪峰), Lu Yi (鲁毅), Zhao Jian-Jun (赵建军) |
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An electron spin resonance study of Eu doping effect in La4/3Sr5/3Mn2O7 single crystal |
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Chin. Phys. B
2014 Vol.23 (7): 77601-077601
[Abstract]
(739)
[HTML 1 KB]
[PDF 311 KB]
(413)
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68102 |
Zhang Jin-Feng (张金风), Nie Yu-Hu (聂玉虎), Zhou Yong-Bo (周勇波), Tian Kun (田坤), Ha Wei (哈微), Xiao Ming (肖明), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Depth-dependent mosaic tilt and twist in GaN epilayer：An approximate evaluation |
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Chin. Phys. B
2014 Vol.23 (6): 68102-068102
[Abstract]
(514)
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[PDF 399 KB]
(736)
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68801 |
Yang Jing (杨静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Li Liang (李亮), Wu Liang-Liang (吴亮亮), Le Ling-Cong (乐伶聪), Li Xiao-Jing (李晓静), He Xiao-Guang (何晓光), Wang Hui (王辉), Zhu Jian-Jun (朱建军), Zhang Shu-Ming (张书明), Zhang Bao-Shun (张宝顺), Yang Hui (杨辉) |
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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells |
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Chin. Phys. B
2014 Vol.23 (6): 68801-068801
[Abstract]
(599)
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[PDF 429 KB]
(477)
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68502 |
Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Li Dan-Wei (李丹伟), Yi Han-Xiang (易翰翔), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Wang Wei-Li (王伟丽), Li Shu-Ti (李述体) |
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Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer |
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Chin. Phys. B
2014 Vol.23 (6): 68502-068502
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(807)
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[PDF 1549 KB]
(573)
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67303 |
Liu Xiu-Ying (刘秀英), He Jie (何杰), Yu Jing-Xin (于景新), Li Zheng-Xin (栗正新), Fan Zhi-Qin (樊志琴) |
| |
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Theoretical study of molecular hydrogen and spiltover hydrogen storage on two-dimensional covalent-organic frameworks |
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Chin. Phys. B
2014 Vol.23 (6): 67303-067303
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(463)
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[PDF 1330 KB]
(480)
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67103 |
Li Liang (李亮), Yang Lin-An (杨林安), Xue Jun-Shuai (薛军帅), Cao Rong-Tao (曹荣涛), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition |
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Chin. Phys. B
2014 Vol.23 (6): 67103-067103
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(500)
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[PDF 1120 KB]
(547)
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66801 |
Feng Zhen-Yu (冯振宇), Ban Shi-Liang (班士良), Zhu Jun (朱俊) |
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Binding energies of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions with finitely thick potential barriers |
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Chin. Phys. B
2014 Vol.23 (6): 66801-066801
[Abstract]
(486)
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[PDF 292 KB]
(412)
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58101 |
Zhang Shi-Ying (张士英), Xiu Xiang-Qian (修向前), Hua Xue-Mei (华雪梅), Xie Zi-Li (谢自力), Liu Bin (刘斌), Chen Peng (陈鹏), Han Ping (韩平), Lu Hai (陆海), Zhang Rong (张荣), Zheng You-Dou (郑有炓) |
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GaN hexagonal pyramids formed by a photo-assisted chemical etching method |
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Chin. Phys. B
2014 Vol.23 (5): 58101-058101
[Abstract]
(584)
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[PDF 794 KB]
(473)
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57202 |
Wang Deng-Jing (王登京), Ma Jun-Jie (马俊杰), Wang Mei (王妹), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝) |
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Effect of charge order transition on tunneling resistance in Pr0.6Ca0.4MnO3/Nb-doped SrTiO3 heterojunction |
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Chin. Phys. B
2014 Vol.23 (5): 57202-057202
[Abstract]
(677)
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[PDF 378 KB]
(413)
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58106 |
Yang Fu-Jiang (杨福江), Han Shi-Xuan (韩士轩), Xie Shi-Jie (解士杰) |
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Progress in organic spintronics |
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Chin. Phys. B
2014 Vol.23 (5): 58106-058106
[Abstract]
(434)
[HTML 1 KB]
[PDF 1291 KB]
(897)
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58501 |
Qiao Shi-Zhu (乔士柱), Kang Shi-Shou (康仕寿), Qin Yu-Feng (秦羽丰), Li Qiang (李强), Zhong Hai (钟海), Kang Yun (康韵), Yu Shu-Yun (于淑云), Han Guang-Bing (韩广兵), Yan Shi-Shen (颜世申), Mei Liang-Mo (梅良模) |
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Multi-polar resistance switching and memory effect in copper phthalocyanine junctions |
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Chin. Phys. B
2014 Vol.23 (5): 58501-058501
[Abstract]
(575)
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[PDF 1657 KB]
(531)
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54211 |
Liang Ming-Ming (梁明明), Weng Guo-En (翁国恩), Zhang Jiang-Yong (张江勇), Cai Xiao-Mei (蔡晓梅), Lü Xue-Qin (吕雪芹), Ying Lei-Ying (应磊莹), Zhang Bao-Ping (张保平) |
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Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells |
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Chin. Phys. B
2014 Vol.23 (5): 54211-054211
[Abstract]
(734)
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[PDF 446 KB]
(611)
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57301 |
Liao Xue-Yang (廖雪阳), Zhang Kai (张凯), Zeng Chang (曾畅), Zheng Xue-Feng (郑雪峰), En Yun-Fei (恩云飞), Lai Ping (来萍), Hao Yue (郝跃) |
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Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique |
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Chin. Phys. B
2014 Vol.23 (5): 57301-057301
[Abstract]
(537)
[HTML 1 KB]
[PDF 386 KB]
(898)
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58502 |
Cai Jin-Xin (蔡金鑫), Sun Hui-Qing (孙慧卿), Zheng Huan (郑欢), Zhang Pan-Jun (张盼君), Guo Zhi-You (郭志友) |
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Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers |
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Chin. Phys. B
2014 Vol.23 (5): 58502-058502
[Abstract]
(541)
[HTML 1 KB]
[PDF 433 KB]
(480)
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47301 |
Wang Mei (王妹), Wang Deng-Jing (王登京), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝) |
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Direct measurement of the interfacial barrier height of the manganite p-n heterojunction |
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Chin. Phys. B
2014 Vol.23 (4): 47301-047301
[Abstract]
(808)
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[PDF 228 KB]
(484)
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48502 |
Yang Bin (杨斌), Guo Zhi-You (郭志友), Xie Nan (解楠), Zhang Pan-Jun (张盼君), Li Jing (李婧), Li Fang-Zheng (李方正), Lin Hong (林宏), Zheng Huan (郑欢), Cai Jin-Xin (蔡金鑫) |
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A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED |
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Chin. Phys. B
2014 Vol.23 (4): 48502-048502
[Abstract]
(565)
[HTML 1 KB]
[PDF 1099 KB]
(825)
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47201 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Yang Ming (杨铭), Wang Yu-Tang (王玉堂) |
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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2014 Vol.23 (4): 47201-047201
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(474)
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[PDF 336 KB]
(478)
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47804 |
Cao Rong-Tao (曹荣涛), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Zhao Yi (赵一), Xue Jun-Shuai (薛军帅), Ha Wei (哈微), Zhang Shuai (张帅), Cui Pei-Shui (崔培水), Wen Hui-Juan (温慧娟), Chen Xing (陈兴) |
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Improvement in a-plane GaN crystalline quality using wet etching method |
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Chin. Phys. B
2014 Vol.23 (4): 47804-047804
[Abstract]
(545)
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[PDF 645 KB]
(453)
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44206 |
Xu Yue (徐悦), Jin Zuan-Ming (金钻明), Zhang Zheng-Bing (张郑兵), Zhang Ze-Yu (张泽宇), Lin Xian (林贤), Ma Guo-Hong (马国宏), Cheng Zhen-Xiang (程振祥) |
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Gigahertz longitudinal acoustic phonons originating from ultrafast ligand field transitions in hematite thin films |
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Chin. Phys. B
2014 Vol.23 (4): 44206-044206
[Abstract]
(510)
[HTML 1 KB]
[PDF 928 KB]
(953)
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38803 |
Xiang Chun-Ping (相春平), Jin Yu (金玉), Liu Jie-Tao (刘杰涛), Xu Bin-Zong (许斌宗), Wang Wei-Min (汪卫敏), Wei Xin (韦欣), Song Guo-Feng (宋国峰), Xu Yun (徐云) |
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Effective absorption enhancement in small molecule organic solar cells using trapezoid gratings |
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Chin. Phys. B
2014 Vol.23 (3): 38803-038803
[Abstract]
(579)
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[PDF 2934 KB]
(514)
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38505 |
Li Hai-Qiang (李海强), Yu Jun-Sheng (于军胜), Huang Wei (黄伟), Shi Wei (施薇), Huang Jiang (黄江) |
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High performance pentacene organic field-effect transistors consisting of biocompatible PMMA/silk fibroin bilayer dielectric |
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Chin. Phys. B
2014 Vol.23 (3): 38505-038505
[Abstract]
(860)
[HTML 1 KB]
[PDF 492 KB]
(62423)
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38405 |
Yang Qian-Qian (杨倩倩), Yang Dao-Bin (杨道宾), Zhao Su-Ling (赵谡玲), Huang Yan (黄艳), Xu Zheng (徐征), Gong Wei (龚伟), Fan Xing (樊星), Liu Zhi-Fang (刘志方), Huang Qing-Yu (黄清雨), Xu Xu-Rong (徐叙瑢) |
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UV-ozone-treated MoO3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ：PC71BM photovoltaic devices |
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Chin. Phys. B
2014 Vol.23 (3): 38405-038405
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(533)
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[PDF 552 KB]
(344)
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38403 |
Li Ming (黎明), Wang Yong (王勇), Wong Kai-Ming (王凯明), Lau Kei-May (刘纪美) |
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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition |
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Chin. Phys. B
2014 Vol.23 (3): 38403-038403
[Abstract]
(696)
[HTML 1 KB]
[PDF 1317 KB]
(885)
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37305 |
Cao Meng-Yi (曹梦逸), Zhang Kai (张凯), Chen Yong-He (陈永和), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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High-efficiency S-band harmonic tuning GaN amplifier |
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Chin. Phys. B
2014 Vol.23 (3): 37305-037305
[Abstract]
(548)
[HTML 1 KB]
[PDF 419 KB]
(801)
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37302 |
Wen Hui-Juan (温慧娟), Zhang Jin-Cheng (张进成), Lu Xiao-Li (陆小力), Wang Zhi-Zhe (王之哲), Ha Wei (哈微), Ge Sha-Sha (葛莎莎), Cao Rong-Tao (曹荣涛), Hao Yue (郝跃) |
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Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer |
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Chin. Phys. B
2014 Vol.23 (3): 37302-037302
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(600)
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[PDF 878 KB]
(507)
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18104 |
Chen Bin-Bin (陈彬彬), Jiang Sheng-Wei (姜生伟), Ding Hai-Feng (丁海峰), Jiang Zheng-Sheng (蒋正生), Wu Di (吴镝) |
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The basis of organic spintronics：Fabrication of organic spin valves |
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Chin. Phys. B
2014 Vol.23 (1): 18104-018104
[Abstract]
(627)
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[PDF 757 KB]
(912)
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28504 |
Wu Kui (吴奎), Wei Tong-Bo (魏同波), Lan Ding (蓝鼎), Zheng Hai-Yang (郑海洋), Wang Jun-Xi (王军喜), Luo Yi (罗毅), Li Jin-Min (李晋闽) |
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Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography |
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Chin. Phys. B
2014 Vol.23 (2): 28504-028504
[Abstract]
(606)
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[PDF 588 KB]
(841)
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27502 |
Ding Lin-Jie (丁林杰), Zhong Yuan (钟园), Fan Shuai-Wei (樊帅伟) |
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Ferrimagnetism and metal–insulator transition in an organic polymer chain |
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Chin. Phys. B
2014 Vol.23 (2): 27502-027502
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(439)
[HTML 1 KB]
[PDF 749 KB]
(498)
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27302 |
Ma Xiao-Hua (马晓华), Lü Min (吕敏), Pang Lei (庞磊), Jiang Yuan-Qi (姜元祺), Yang Jing-Zhi (杨靖治), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
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Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier |
| |
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Chin. Phys. B
2014 Vol.23 (2): 27302-027302
[Abstract]
(701)
[HTML 1 KB]
[PDF 409 KB]
(33710)
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27101 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Cai Shu-Jun (蔡树军) |
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Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes |
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Chin. Phys. B
2014 Vol.23 (2): 27101-027101
[Abstract]
(677)
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[PDF 268 KB]
(730)
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26801 |
Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Yang Shao-Yan (杨少延), Li Hui-Jie (李辉杰), Zhao Gui-Juan (赵桂娟), Zhang Heng (张恒), Wei Hong-Yuan (魏鸿源), Jiao Chun-Mei (焦春美), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) |
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Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer |
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Chin. Phys. B
2014 Vol.23 (2): 26801-026801
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(643)
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[PDF 690 KB]
(570)
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20701 |
Liu Yu-An (刘宇安), Zhuang Yi-Qi (庄奕琪), Ma Xiao-Hua (马晓华), Du Ming (杜鸣), Bao Jun-Lin (包军林), Li Cong (李聪) |
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A unified drain current 1/f noise model for GaN-based high electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (2): 20701-020701
[Abstract]
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[HTML 1 KB]
[PDF 306 KB]
(656)
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27102 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Wang Yuan-Gang (王元刚), Xu Peng (徐鹏), Han Ting-Ting (韩婷婷), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军), Luan Chong-Biao (栾崇彪), Lin Zhao-Jun (林兆军) |
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Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes |
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Chin. Phys. B
2014 Vol.23 (2): 27102-027102
[Abstract]
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[HTML 1 KB]
[PDF 281 KB]
(530)
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28502 |
Yu Xiao-Peng (喻晓鹏), Fan Guang-Han (范广涵), Ding Bin-Bin (丁彬彬), Xiong Jian-Yong (熊建勇), Xiao Yao (肖瑶), Zhang Tao (张涛), Zheng Shu-Wen (郑树文) |
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Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer |
| |
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Chin. Phys. B
2014 Vol.23 (2): 28502-028502
[Abstract]
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[HTML 1 KB]
[PDF 947 KB]
(1330)
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18506 |
Ahmet Kaya, Sedat Zeyrek, Sait Eren San, Şmsettin Altindal |
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Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range |
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Chin. Phys. B
2014 Vol.23 (1): 18506-018506
[Abstract]
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[HTML 1 KB]
[PDF 1510 KB]
(497)
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17303 |
Ma Xiao-Hua (马晓华), Jiang Yuan-Qi (姜元祺), Wang Xin-Hua (王鑫华), Lü Min (吕敏), Zhang Huo (张霍), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
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Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (1): 17303-017303
[Abstract]
(562)
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[PDF 318 KB]
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17803 |
Bi Wen-Tao (毕文涛), Wu Xiao-Ming (吴晓明), Hua Yu-Lin (华玉林), Sun Jin-E (孙金娥), Xiao Zhi-Hui (肖志慧), Wang Li (王丽), Yin Shou-Gen (印寿根) |
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Tandem white organic light-emitting diodes adopting a C60：rubrene charge generation layer |
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Chin. Phys. B
2014 Vol.23 (1): 17803-017803
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[PDF 337 KB]
(1318)
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16101 |
Li Jun-Ze (李俊泽), Tao Yue-Bin (陶岳彬), Chen Zhi-Zhong (陈志忠), Jiang Xian-Zhe (姜显哲), Fu Xing-Xing (付星星), Jiang Shuang (姜爽), Jiao Qian-Qian (焦倩倩), Yu Tong-Jun (于彤军), Zhang Guo-Yi (张国义) |
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Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template |
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Chin. Phys. B
2014 Vol.23 (1): 16101-016101
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(545)
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(572)
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0 |
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Large-scale SiO2 Photonic Crystal for High Efficiency GaN LEDs by Nanospherical-lens Lithography |
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Chin. Phys. B
Vol. (): 0-0
[Abstract]
(35)
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(4)
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0 |
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Directly measure the interfacial barrier height of the manganite p-n heterojunction |
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Chin. Phys. B
Vol. (): 0-0
[Abstract]
(10)
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(5)
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0 |
Yue Xu (徐悦) |
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Gigahertz longitudinal acoustic phonons originated from ultrafast ligand field transitions in hematite thin films |
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Chin. Phys. B
Vol. (): 0-0
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(5)
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128505 |
Xu Zong-Xiang (许宗祥), Roy V. A. L. |
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Organic photovoltaic cells with copper (Ⅱ) tetra-methyl substituted phthalocyanine |
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Chin. Phys. B
2013 Vol.22 (12): 128505-128505
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127304 |
Guo Run-Da (郭闰达), Yue Shou-Zhen (岳守振), Wang Peng (王鹏), Chen Yu (陈宇), Zhao Yi (赵毅), Liu Shi-Yong (刘式墉) |
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Increased performance of an organic light-emitting diode by employing a zinc phthalocyanine based composite hole transport layer |
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Chin. Phys. B
2013 Vol.22 (12): 127304-127304
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118504 |
Xiong Jian-Yong (熊建勇), Zhao Fang (赵芳), Fan Guang-Han (范广涵), Xu Yi-Qin (许毅钦), Liu Xiao-Ping (刘小平), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zhang Tao (张涛), Zheng Shu-Wen (郑树文) |
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Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier |
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Chin. Phys. B
2013 Vol.22 (11): 118504-118504
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117103 |
Ji Yan-Jun (纪延俊), Du Yu-Jie (杜玉杰), Wang Mei-Shan (王美山) |
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Electronic structure and optical properties of Al and Mg co-doped GaN |
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Chin. Phys. B
2013 Vol.22 (11): 117103-117103
[Abstract]
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117306 |
Tan Ren-Bing (谭仁兵), Qin Hua (秦华), Zhang Xiao-Yu (张晓渝), Xu Wen (徐文) |
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Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2013 Vol.22 (11): 117306-117306
[Abstract]
(607)
[HTML 1 KB]
[PDF 342 KB]
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117307 |
Zhao Sheng-Lei (赵胜雷), Chen Wei-Wei (陈伟伟), Yue Tong (岳童), Wang Yi (王毅), Luo Jun (罗俊), Mao Wei (毛维), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2013 Vol.22 (11): 117307-117307
[Abstract]
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117805 |
Zhang Xiao-Jin (张晓晋), He Zhi-Qun (何志群), Wang Jing (汪璟), Mu Lin-Ping (穆林平), Zhao Huan (赵瓛), Liang Chun-Jun (梁春军), Zhuang Qi-Xin (庄启昕), Han Zhe-Wen (韩哲文) |
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Optimization of a poly(p-phenylene benzobisoxazole)-based light-emitting device with a complex cathode structure |
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Chin. Phys. B
2013 Vol.22 (11): 117805-117805
[Abstract]
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116801 |
Gao Zhi-Xiang (高志翔), Wang Hua (王华), Hao Yu-Ying (郝玉英), Miao Yan-Qin (苗艳勤), Xu Bing-She (许并社) |
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Improved light extraction of organic light emitting diodes with a nanopillar pattering structure |
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Chin. Phys. B
2013 Vol.22 (11): 116801-116801
[Abstract]
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108505 |
Xiong Jian-Yong (熊建勇), Xu Yi-Qin (许毅钦), Zhao Fang (赵芳), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zheng Shu-Wen (郑树文), Zhang Tao (张涛), Fan Guang-Han (范广涵) |
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Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer |
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Chin. Phys. B
2013 Vol.22 (10): 108505-108505
[Abstract]
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107303 |
Chen Wei-Wei (陈伟伟), Ma Xiao-Hua (马晓华), Hou Bin (侯斌), Zhu Jie-Jie (祝杰杰), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress |
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Chin. Phys. B
2013 Vol.22 (10): 107303-107303
[Abstract]
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106803 |
Lu Ping-Yuan (卢平元), Ma Zi-Guang (马紫光), Su Shi-Chen (宿世臣), Zhang Li (张力), Chen Hong (陈弘), Jia Hai-Qiang (贾海强), Jiang Yang (江洋), Qian Wei-Ning (钱卫宁), Wang Geng (王耿), Lu Tai-Ping (卢太平), He Miao (何苗) |
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Influence of Si doping on the structural and optical properties of InGaN epilayers |
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Chin. Phys. B
2013 Vol.22 (10): 106803-106803
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(726)
[HTML 1 KB]
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106802 |
Wang Bo (王波), Su Shi-Chen (宿世臣), He Miao (何苗), Chen Hong (陈弘), Wu Wen-Bo (吴汶波), Zhang Wei-Wei (张伟伟), Wang Qiao (王巧), Chen Yu-Long (陈虞龙), Gao You (高优), Zhang Li (张力), Zhu Ke-Bao (朱克宝), Lei Yan (雷严) |
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Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching |
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Chin. Phys. B
2013 Vol.22 (10): 106802-106802
[Abstract]
(793)
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106106 |
Qian Wei-Ning (钱卫宁), Su Shi-Chen (宿世臣), Chen Hong (陈弘), Ma Zi-Guang (马紫光), Zhu Ke-Bao (朱克宝), He Miao (何苗), Lu Ping-Yuan (卢平元), Wang Geng (王耿), Lu Tai-Ping (卢太平), Du Chun-Hua (杜春花), Wang Qiao (王巧), Wu Wen-Bo (吴汶波), Zhang Wei-Wei (张伟伟) |
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Effect of InxGa1-xN “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition |
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Chin. Phys. B
2013 Vol.22 (10): 106106-106106
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87502 |
Liu Yu-Kuai (刘愉快), Yin Yue-Wei (殷月伟), Li Xiao-Guang (李晓光) |
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Colossal magnetoresistance in manganites and related prototype devices |
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Chin. Phys. B
2013 Vol.22 (8): 87502-087502
[Abstract]
(757)
[HTML 1 KB]
[PDF 3522 KB]
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87104 |
Li Liang (李亮), Yang Lin-An (杨林安), Zhou Xiao-Wei (周小伟), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode |
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Chin. Phys. B
2013 Vol.22 (8): 87104-087104
[Abstract]
(694)
[HTML 1 KB]
[PDF 560 KB]
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97303 |
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Lei Xiao-Yi (雷晓艺), Zhao Sheng-Lei (赵胜雷), Yang Li-Yuan (杨丽媛), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Field plate structural optimization for enhancing the power gain of GaN-based HEMTs |
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Chin. Phys. B
2013 Vol.22 (9): 97303-097303
[Abstract]
(592)
[HTML 1 KB]
[PDF 354 KB]
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98504 |
Wang Xing-Fu (王幸福), Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers |
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Chin. Phys. B
2013 Vol.22 (9): 98504-098504
[Abstract]
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88401 |
Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content |
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Chin. Phys. B
2013 Vol.22 (8): 88401-088401
[Abstract]
(609)
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[PDF 421 KB]
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88104 |
Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Zhong Jian (钟健), Yao Yao (姚尧), Yang Fan (杨帆), Xiang Peng (向鹏), Zhang Bai-Jun (张佰君), Liu Yang (刘扬) |
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Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers |
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Chin. Phys. B
2013 Vol.22 (8): 88104-088104
[Abstract]
(668)
[HTML 1 KB]
[PDF 397 KB]
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88102 |
Wan Tu-Tu (万图图), Ye Zhan-Qi (叶展圻), Tao Tao (陶涛), Xie Zi-Li (谢自力), Zhang Rong (张荣), Liu Bin (刘斌), Xiu Xiang-Qian (修向前), Li Yi (李毅), Han Ping (韩平), Shi Yi (施毅), Zheng You-Dou (郑有炓) |
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The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays |
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Chin. Phys. B
2013 Vol.22 (8): 88102-088102
[Abstract]
(762)
[HTML 1 KB]
[PDF 521 KB]
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88503 |
Ding Bin-Bin (丁彬彬), Zhao Fang (赵芳), Song Jing-Jing (宋晶晶), Xiong Jian-Yong (熊建勇), Zheng Shu-Wen (郑树文), Zhang Yun-Yan (张运炎), Xu Yi-Qin (许毅钦), Zhou De-Tao (周德涛), Yu Xiao-Peng (喻晓鹏), Zhang Han-Xiang (张瀚翔), Zhang Tao (张涛), Fan Guang-Han (范广涵) |
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Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer |
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Chin. Phys. B
2013 Vol.22 (8): 88503-088503
[Abstract]
(566)
[HTML 1 KB]
[PDF 432 KB]
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87503 |
Wu Zhan-Wen (伍展文), Li Jie (李洁), Li Song-Lin (黎松林), Zheng Dong-Ning (郑东宁) |
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Field-induced insulator-metal-insulator transitions in low-energy H2+ ion-irradiated epitaxial La2/3Ca1/3MnO3 thin films |
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Chin. Phys. B
2013 Vol.22 (8): 87503-087503
[Abstract]
(689)
[HTML 1 KB]
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67203 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Wang Yu-Tang (王玉堂), Chen Hong (陈弘), Wang Zhan-Guo (王占国) |
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Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor |
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Chin. Phys. B
2013 Vol.22 (6): 67203-067203
[Abstract]
(664)
[HTML 1 KB]
[PDF 550 KB]
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78402 |
Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Li Dan-Wei (李丹伟), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells |
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Chin. Phys. B
2013 Vol.22 (7): 78402-078402
[Abstract]
(856)
[HTML 1 KB]
[PDF 2267 KB]
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77401 |
Ding Fa-Zhu (丁发柱), Gu Hong-Wei (古宏伟), Zhang Teng (张腾), Wang Hong-Yan (王洪艳), Qu Fei (屈飞), Qiu Qing-Quan (邱清泉), Dai Shao-Tao (戴少涛), Peng Xing-Yu (彭星煜) |
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Strong flux pinning enhancement in YBa2Cu3O7-x films by embedded BaZrO3 and BaTiO3 nanoparticles |
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Chin. Phys. B
2013 Vol.22 (7): 77401-077401
[Abstract]
(637)
[HTML 1 KB]
[PDF 1636 KB]
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77305 |
Wang Jian-Xia (王建霞), Yang Shao-Yan (杨少延), Wang Jun (王俊), Liu Gui-Peng (刘贵鹏), Li Zhi-Wei (李志伟), Li Hui-Jie (李辉杰), Jin Dong-Dong (金东东), Liu Xiang-Lin (刘祥林), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) |
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Electron mobility limited by surface and interface roughness scatterings in AlxGa1-xN/GaN quantum wells |
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Chin. Phys. B
2013 Vol.22 (7): 77305-077305
[Abstract]
(747)
[HTML 1 KB]
[PDF 419 KB]
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77102 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Sheng Bai-Cheng (盛百城), Cai Shu-Jun (蔡树军), Liu Bo (刘波), Lin Zhao-Jun (林兆军) |
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Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode |
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Chin. Phys. B
2013 Vol.22 (7): 77102-077102
[Abstract]
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[HTML 1 KB]
[PDF 270 KB]
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76803 |
Cao Wen-Yu (曹文彧), He Yong-Fa (贺永发), Chen Zhao (陈钊), Yang Wei (杨薇), Du Wei-Min (杜为民), Hu Xiao-Dong (胡晓东) |
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Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure |
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Chin. Phys. B
2013 Vol.22 (7): 76803-076803
[Abstract]
(805)
[HTML 1 KB]
[PDF 286 KB]
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68505 |
Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers |
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Chin. Phys. B
2013 Vol.22 (6): 68505-068505
[Abstract]
(625)
[HTML 1 KB]
[PDF 372 KB]
(864)
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68503 |
Wang Chong (王冲), He Yun-Long (何云龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO |
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Chin. Phys. B
2013 Vol.22 (6): 68503-068503
[Abstract]
(702)
[HTML 1 KB]
[PDF 359 KB]
(1267)
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67104 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Cai Shu-Jun (蔡树军), Dun Shao-Bo (敦少博), Liu Bo (刘波), Yin Jia-Yun (尹甲运), Zhang Xiong-Wen (张雄文), Fang Yu-Long (房玉龙), Lin Zhao-Jun (林兆军), Meng Ling-Guo (孟令国), Luan Chong-Biao (栾崇彪) |
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Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2013 Vol.22 (6): 67104-067104
[Abstract]
(700)
[HTML 1 KB]
[PDF 858 KB]
(656)
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66101 |
Lü Xiao-Long (吕晓龙), Zhang Xia (张霞), Liu Xiao-Long (刘小龙), Yan Xin (颜鑫), Cui Jian-Gong (崔建功), Li Jun-Shuai (李军帅), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏) |
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Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces |
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Chin. Phys. B
2013 Vol.22 (6): 66101-066101
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(576)
[HTML 1 KB]
[PDF 1645 KB]
(484)
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60307 |
Xu Shu-Jiang (徐淑奖), Chen Xiu-Bo (陈秀波), Niu Xin-Xin (钮心忻), Yang Yi-Xian (杨义光) |
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Steganalysis and improvement of a quantum steganography protocol via GHZ4 state |
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Chin. Phys. B
2013 Vol.22 (6): 60307-060307
[Abstract]
(757)
[HTML 1 KB]
[PDF 197 KB]
(683)
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58503 |
Zhao Fang (赵芳), Yao Guang-Rui (姚光锐), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Xiong Jian-Yong (熊建勇), Su Chen (苏晨), Zheng Shu-Wen (郑树文), Zhang Tao (张涛), Fan Guang-Han (范广涵) |
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Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer |
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Chin. Phys. B
2013 Vol.22 (5): 58503-058503
[Abstract]
(570)
[HTML 1 KB]
[PDF 351 KB]
(1125)
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58104 |
Xiong Fei (熊飞), Yang Tao (杨涛), Song Zhao-Ning (宋肇宁), Yang Pei-Zhi (杨培志) |
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Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition |
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Chin. Phys. B
2013 Vol.22 (5): 58104-058104
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(645)
[HTML 1 KB]
[PDF 812 KB]
(408)
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58504 |
Wang Hui (王辉), Hu Gui-Chao (胡贵超), Ren Jun-Feng (任俊峰) |
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The effect of dimerization on the magnetoresistance in organic spin valves |
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Chin. Phys. B
2013 Vol.22 (5): 58504-058504
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[HTML 1 KB]
[PDF 539 KB]
(376)
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57302 |
Tian Wu (田武), Yan Wei-Yi (鄢伟一), Xiong Hui (熊晖), Dai Jian-Nan (戴江南), Fang Yan-Yan (方妍妍), Wu Zhi-Hao (吴志浩), Yu Chen-Hui (余晨辉), Chen Chang-Qin (陈长清) |
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Effects of polarization on intersubband transitions of AlxGa1-xN/GaN multi-quantum wells |
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Chin. Phys. B
2013 Vol.22 (5): 57302-057302
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(652)
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50309 |
Ye Tian-Yu (叶天语), Jiang Li-Zhen (蒋丽珍) |
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Quantum steganography with large payload based on dense coding and entanglement swapping of Greenberger-Horne-Zeilinger states |
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Chin. Phys. B
2013 Vol.22 (5): 50309-050309
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(516)
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47806 |
Bai Juan-Juan (白娟娟), Wu Xiao-Ming (吴晓明), Hua Yu-Lin (华玉林), Mu Xue (穆雪), Bi Wen-Tao (毕文涛), Su Yue-Ju (苏跃举), Jiao Zhi-Qiang (焦志强), Shen Li-Ying (申利莹), Yin Shou-Gen (印寿根), Zheng Jia-Jin (郑加金) |
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Efficiency of blue organic light-emitting diode enhanced by inserting charge control layers into emission region |
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Chin. Phys. B
2013 Vol.22 (4): 47806-047806
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(592)
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47805 |
Jiang Rong (江蓉), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Yan Da-Wei (闫大为), Zhang Rong (张荣), Zheng You-Dou (郑有炓) |
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Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes |
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Chin. Phys. B
2013 Vol.22 (4): 47805-047805
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(741)
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[PDF 330 KB]
(2005)
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47102 |
Cao Zhi-Fang (曹芝芳), Lin Zhao-Jun (林兆军), Lü Yuan-Jie (吕元杰), Luan Chong-Biao (栾崇彪), Wang Zhan-Guo (王占国) |
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Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2013 Vol.22 (4): 47102-047102
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[PDF 344 KB]
(494)
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40305 |
Ye Tian-Yu (叶天语), Jiang Li-Zhen (蒋丽珍) |
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Large payload quantum steganography based on cavity quantum electrodynamics |
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Chin. Phys. B
2013 Vol.22 (4): 40305-040305
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[PDF 220 KB]
(493)
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37202 |
Lu Fei-Ping (路飞平), Wang Qian (王倩), Zhou Xiang (周翔) |
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Tandem organic light-emitting diode with molybdenum tri-oxide thin film interconnector layer |
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Chin. Phys. B
2013 Vol.22 (3): 37202-037202
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(1460)
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27805 |
Mu Xue (穆雪), Wu Xiao-Ming (吴晓明), Hua Yu-Lin (华玉林), Jiao Zhi-Qiang (焦志强), Shen Li-Ying (申利莹), Su Yue-Ju (苏跃举), Bai Juan-Juan (白娟娟), Bi Wen-Tao (毕文涛), Yin Shou-Gen (印寿根), Zheng Jia-Jin (郑加金 ) |
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Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer |
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Chin. Phys. B
2013 Vol.22 (2): 27805-027805
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[PDF 276 KB]
(3951)
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26803 |
Fu Ai-Bing (傅爱兵), Hao Ming-Rui (郝明瑞), Yang Yao (杨耀), Shen Wen-Zhong (沈文忠), Liu Hui-Chun (刘惠春) |
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Optically pumped GaN/AlGaN quantum well intersubband terahertz laser |
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Chin. Phys. B
2013 Vol.22 (2): 26803-026803
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26103 |
Xie Gang (谢刚), Tang Cen (汤岑), Wang Tao (汪涛), Guo Qing (郭清), Zhang Bo (张波), Sheng Kuang (盛况), Wai Tung Ng |
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An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient |
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Chin. Phys. B
2013 Vol.22 (2): 26103-026103
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[PDF 1199 KB]
(1805)
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27901 |
Wang Xiao-Hui (王晓晖), Gao Pin (高频), Wang Hong-Gang (王洪刚), Li Biao (李飙), Chang Ben-Kang (常本康) |
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Influence of wet chemical cleaning on quantum efficiency of GaN photocathode |
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Chin. Phys. B
2013 Vol.22 (2): 27901-027901
[Abstract]
(854)
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[PDF 406 KB]
(1360)
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28101 |
Wang Dang-Hui (王党会), Xu Sheng-Rui (许晟瑞), Hao Yue (郝跃), Zhang Jin-Cheng (张进成), Xu Tian-Han (许天旱), Lin Zhi-Yu (林志宇), Zhou Hao (周昊), Xue Xiao-Yong (薛晓咏 ) |
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Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering |
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Chin. Phys. B
2013 Vol.22 (2): 28101-028101
[Abstract]
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[PDF 301 KB]
(754)
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26102 |
Yan Qi-Rong (严启荣), Yan Qi-Ang (闫其昂), Shi Pei-Pei (石培培), Niu Qiao-Li (牛巧利), Li Shu-Ti (李述体), Zhang Yong (章勇) |
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Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells |
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Chin. Phys. B
2013 Vol.22 (2): 26102-026102
[Abstract]
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[PDF 372 KB]
(775)
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17501 |
Shen Jian (沈健), T. Z. Ward, L. F. Yin |
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Emergent phenomena in manganites under spatial confinement |
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Chin. Phys. B
2013 Vol.22 (1): 17501-017501
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[PDF 2047 KB]
(1366)
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10701 |
Muhammad Tariq Saeed Chani, Kh. S. Karimov, F. A. Khalid, S. Z. Abbas, M. B. Bhatty |
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Orange dye–polyaniline composite based impedance humidity sensors |
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Chin. Phys. B
2013 Vol.22 (1): 10701-010701
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(1015)
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[PDF 502 KB]
(1779)
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17801 |
Zhou An (周安), Xiu Xiang-Qian (修向前), Zhang Rong (张荣), Xie Zi-Li (谢自力), Hua Xue-Mei (华雪梅), Liu Bin (刘斌), Han Ping (韩平), Gu Shu-Lin (顾书林), Shi Yi (施毅), Zheng You-Dou (郑有炓) |
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Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study |
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Chin. Phys. B
2013 Vol.22 (1): 17801-017801
[Abstract]
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[PDF 610 KB]
(1320)
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17202 |
Zhang Xue-Feng (张雪锋), Wang Li (王莉), Liu Jie (刘杰), Wei Lai (魏崃), Xu Jian (许键) |
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Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation |
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Chin. Phys. B
2013 Vol.22 (1): 17202-017202
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[PDF 330 KB]
(2230)
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126102 |
Tian Ben-Lang (田本朗), Chen Chao (陈超), Li Yan-Rong (李言荣), Zhang Wan-Li (张万里), Liu Xing-Zhao (刘兴钊) |
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Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
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Chin. Phys. B
2012 Vol.21 (12): 126102-126102
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(1031)
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[PDF 411 KB]
(830)
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128501 |
Kong Xin (孔欣), Wei Ke (魏珂), Liu Guo-Guo (刘果果), Liu Xin-Yu (刘新宇) |
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Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application |
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Chin. Phys. B
2012 Vol.21 (12): 128501-128501
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(1142)
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[PDF 641 KB]
(2102)
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128402 |
Yang Qian-Qian (杨倩倩), Zhao Su-Ling (赵谡玲), Zhang Fu-Jun (张福俊), Yan Guang (闫光), Kong Chao (孔超), Fan Xing (樊星), Zhang Yan-Fei (张妍斐), Xu Xu-Rong (徐叙瑢) |
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Enhanced performance in organic photovoltaic devices with KMnO4 solution treated indium tin oxide anode modification |
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Chin. Phys. B
2012 Vol.21 (12): 128402-128402
[Abstract]
(858)
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[PDF 1183 KB]
(668)
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128101 |
Peng Dong-Sheng (彭冬生), Chen Zhi-Gang (陈志刚), Tan Cong-Cong (谭聪聪) |
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The influence of SixNy interlayer on GaN film grown on Si(111) substrate |
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Chin. Phys. B
2012 Vol.21 (12): 128101-128101
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[PDF 1326 KB]
(520)
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126804 |
Lin Zhi-Yu (林志宇), Zhang Jin-Cheng (张进成), Zhou Hao (周昊), Li Xiao-Gang (李小刚), Meng Fan-Na (孟凡娜), Zhang Lin-Xia (张琳霞), Ai Shan (艾姗), Xu Sheng-Rui (许晟瑞), Zhao Yi (赵一), Hao Yue (郝跃) |
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Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition |
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Chin. Phys. B
2012 Vol.21 (12): 126804-126804
[Abstract]
(944)
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[PDF 3284 KB]
(1096)
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118502 |
Tong Jin-Hui (童金辉), Li Shu-Ti (李述体), Lu Tai-Ping (卢太平), Liu Chao (刘超), Wang Hai-Long (王海龙), Wu Le-Juan (仵乐娟), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫 ) |
| |
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Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers |
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Chin. Phys. B
2012 Vol.21 (11): 118502-118502
[Abstract]
(1027)
[HTML 1 KB]
[PDF 168 KB]
(1127)
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118201 |
Han Guang-Chao (韩广超), Zhao Ke (赵珂), Liu Peng-Wei (刘朋伟), Zhang Li-Li (张立立 ) |
| |
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Influence of rotational isomerism on two-photon absorption properties of FTC chromophores |
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Chin. Phys. B
2012 Vol.21 (11): 118201-118201
[Abstract]
(1012)
[HTML 1 KB]
[PDF 866 KB]
(611)
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117307 |
Yu Xin-Ge (于欣格), Yu Jun-Sheng (于军胜), Huang Wei (黄伟), Zeng Hong-Juan (曾红娟 ) |
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Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO3 buffer layer |
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Chin. Phys. B
2012 Vol.21 (11): 117307-117307
[Abstract]
(1043)
[HTML 1 KB]
[PDF 410 KB]
(724)
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108508 |
Wang Yu-Mei (王玉梅), Ren Jun-Feng (任俊峰), Yuan Xiao-Bo (原晓波), Dou Zhao-Tao (窦兆涛), Hu Gui-Chao (胡贵超) |
| |
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The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system |
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Chin. Phys. B
2012 Vol.21 (10): 108508-108508
[Abstract]
(1126)
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[PDF 260 KB]
(624)
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108506 |
Chen Shu-Fen (陈淑芬), Chen Chun-Yan (陈春燕), Yang Yang (杨洋), Xie Jun (谢军), Huang Wei (黄维), Shi Hong-Ying (石弘颖), Cheng Fan (程凡) |
| |
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High-contrast top-emitting organic light-emitting devices |
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Chin. Phys. B
2012 Vol.21 (10): 108506-108506
[Abstract]
(945)
[HTML 1 KB]
[PDF 251 KB]
(883)
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108505 |
Chen Zhao (陈钊), Yang Wei (杨薇), Liu Lei (刘磊), Wan Cheng-Hao (万成昊), Li Lei (李磊), He Yong-Fa (贺永发), Liu Ning-Yang (刘宁炀), Wang Lei (王磊), Li Din (李丁), Chen Wei-Hua (陈伟华), Hu Xiao-Dong (胡晓东) |
| |
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Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well |
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Chin. Phys. B
2012 Vol.21 (10): 108505-108505
[Abstract]
(1250)
[HTML 1 KB]
[PDF 457 KB]
(824)
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108507 |
Shao Ming (邵茗), Guo Xu (郭旭), Chen Shu-Fen (陈淑芬), Fan Qu-Li (范曲立), Huang Wei (黄维) |
| |
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Efficient top-emitting white organic light emitting device with an extremely stable chromaticity and viewing-angle |
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Chin. Phys. B
2012 Vol.21 (10): 108507-108507
[Abstract]
(1071)
[HTML 1 KB]
[PDF 336 KB]
(848)
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108503 |
Fu Li-Hua (付立华), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Zhang Rongm (张荣), Zheng You-Dou (郑有炓), Wei Ke (魏珂), Liu Xin-Yu (刘新宇) |
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High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2012 Vol.21 (10): 108503-108503
[Abstract]
(1204)
[HTML 1 KB]
[PDF 178 KB]
(934)
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97104 |
Lü Yuan-Jie (吕元杰), Lin Zhao-Jun (林兆军), Yu Ying-Xia (于英霞), Meng Ling-Guo (孟令国), Cao Zhi-Fang (曹芝芳), Luan Chong-Biao (栾崇彪), Wang Zhan-Guo (王占国) |
| |
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A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics |
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Chin. Phys. B
2012 Vol.21 (9): 97104-097104
[Abstract]
(1385)
[HTML 1 KB]
[PDF 148 KB]
(902)
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87802 |
Zhang Dong-Yan (张东炎), Zheng Xin-He (郑新和), Li Xue-Fei (李雪飞), Wu Yuan-Yuan (吴渊渊), Wang Hui (王辉), Wang Jian-Feng (王建峰), Yang Hui (杨辉) |
| |
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Strain relaxation and optical properties of etched In0.19Ga0.81N nanorod arrays on the GaN template |
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Chin. Phys. B
2012 Vol.21 (8): 87802-087802
[Abstract]
(1429)
[HTML 1 KB]
[PDF 902 KB]
(978)
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88504 |
Meng Ling-Chuan (孟令川), Lou Zhi-Dong (娄志东), Yang Sheng-Yi (杨盛谊), Hou Yan-Bing (侯延冰), Teng Feng (滕枫), Liu Xiao-Jun (刘小君), Li Yun-Bai (李云白 ) |
| |
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White organic light-emitting diodes based on combined electromer and monomer emission in doubly-doped polymers |
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Chin. Phys. B
2012 Vol.21 (8): 88504-088504
[Abstract]
(1388)
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[PDF 144 KB]
(1069)
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87305 |
Wang Zhi-Gang (汪志刚), Chen Wan-Jun (陈万军), Zhang Jing (张竞), Zhang Bo (张波), Li Zhao-Ji (李肇基 ) |
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Monolithic integration of AlGaN/GaN metal–insulator field-effect transistor with ultra-low voltage-drop diode for self-protection |
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Chin. Phys. B
2012 Vol.21 (8): 87305-087305
[Abstract]
(1437)
[HTML 1 KB]
[PDF 5129 KB]
(873)
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84209 |
Feng Mei-Xin (冯美鑫), Zhang Shu-Ming (张书明), Jiang De-Sheng (江徳生), Liu Jian-Ping (刘建平), Wang Hui (王辉), Zeng Chang (曾畅), Li Zeng-Cheng (李增成), Wang Huai-Bing (王怀兵), Wang Feng (王峰), Yang Hui (杨辉) |
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Thermal analysis of GaN laser diodes in a package structure |
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Chin. Phys. B
2012 Vol.21 (8): 84209-084209
[Abstract]
(1581)
[HTML 1 KB]
[PDF 300 KB]
(1496)
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86105 |
Xie Gang (谢刚), Edward Xu, Niloufar Hashemi, Zhang Bo (张波), Fred Y. Fu, Wai Tung Ng |
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An AlGaN/GaN HEMT with reduced surface electric field and an improved breakdown voltage |
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Chin. Phys. B
2012 Vol.21 (8): 86105-086105
[Abstract]
(1408)
[HTML 1 KB]
[PDF 1274 KB]
(1637)
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83303 |
Yu Jian-Ning (于建宁), Zhang Min-Yan (张民艳), Li Chong (李崇), Shang Yu-Zhu (尚玉柱), Lü Yan-Fang (吕燕芳), Wei Bin (魏斌), Huang Wei (黄维) |
| |
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Fine-tuning the thicknesses of organic layers to realize high-efficiency and long-lifetime blue organic light-emitting diodes |
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Chin. Phys. B
2012 Vol.21 (8): 83303-083303
[Abstract]
(1404)
[HTML 1 KB]
[PDF 141 KB]
(1242)
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78503 |
Chen Chao (陈超), Tian Ben-Lang (田本朗), Liu Xing-Zhao (刘兴钊), Dai Li-Ping (戴丽萍), Deng Xin-Wu (邓新武), Chen Yuan-Fu (陈远富 ) |
| |
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The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors |
| |
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Chin. Phys. B
2012 Vol.21 (7): 78503-078503
[Abstract]
(1420)
[HTML 1 KB]
[PDF 123 KB]
(884)
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77801 |
Xing Hai-Ying(邢海英), Niu Ping-Juan(牛萍娟), and Xie Yu-Xin(谢玉芯) |
| |
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The properties of GaMnN lms grown by metalorganic chemical vapour deposition using Raman spectroscopy |
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Chin. Phys. B
2012 Vol.21 (7): 77801-077801
[Abstract]
(1380)
[HTML 1 KB]
[PDF 213 KB]
(540)
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77304 |
Yang Li-Yuan(杨丽媛), Xue Xiao-Yong(薛晓咏), Zhang Kai(张凯) Zheng Xue-Feng(郑雪峰), Ma Xiao-Hua(马晓华), and Hao Yue(郝跃) |
| |
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Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique |
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Chin. Phys. B
2012 Vol.21 (7): 77304-077304
[Abstract]
(1703)
[HTML 1 KB]
[PDF 288 KB]
(1195)
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77302 |
Zhu Li-Ping(朱丽萍), Qiu Yu(邱宇), and Tong Guo-Ping(童国平) |
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Nonadiabatic dynamics of electron injection into organic molecules |
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Chin. Phys. B
2012 Vol.21 (7): 77302-077302
[Abstract]
(1440)
[HTML 1 KB]
[PDF 248 KB]
(524)
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77103 |
Zhang Wei(张伟), Xue Jun-Shuai(薛军帅), Zhou Xiao-Wei (周晓伟), Zhang Yue(张月), Liu Zi-Yang(刘子阳), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer |
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Chin. Phys. B
2012 Vol.21 (7): 77103-077103
[Abstract]
(1676)
[HTML 1 KB]
[PDF 3068 KB]
(1297)
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68506 |
Wu Le-Juan(仵乐娟), Li Shu-Ti(李述体), Liu Chao(刘超), Wang Hai-Long(王海龙), Lu Tai-Ping(卢太平), Zhang Kang(张康), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), and Yang Xiao-Dong(杨孝东) |
| |
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Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers |
| |
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Chin. Phys. B
2012 Vol.21 (6): 68506-068506
[Abstract]
(1313)
[HTML 1 KB]
[PDF 172 KB]
(1076)
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68505 |
Gong Chang-Chun(龚长春), Fan Guang-Han(范广涵), Zhang Yun-Yan(张运炎), Xu Yi-Qin(许毅钦), Liu Xiao-Ping(刘小平), Zheng Shu-Wen(郑树文), Yao Guang-Rui(姚光锐), and Zhou De-Tao(周德涛) |
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The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes |
| |
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Chin. Phys. B
2012 Vol.21 (6): 68505-068505
[Abstract]
(1624)
[HTML 1 KB]
[PDF 175 KB]
(1950)
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67803 |
Zhou Xiao-Wei(周小伟), Xu Sheng-Rui(许晟瑞), Zhang Jin-Cheng(张进成), Dang Ji-Yuan(党纪源), LŰ Ling(吕玲), Hao Yue(郝跃), and Guo Li-Xin(郭立新) |
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Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization |
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Chin. Phys. B
2012 Vol.21 (6): 67803-067803
[Abstract]
(1446)
[HTML 1 KB]
[PDF 178 KB]
(1154)
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67702 |
Peng Jing(彭静), Wu Chuan-Ju(吴传菊), Shen Tang-You(孙堂友), Zhao Wen-Ning(赵文宁), Wu Xiao-Feng(吴小锋), Liu Wen(刘文) Wang Shuang-Bao(王双保), Jie Quan-Lin(揭泉林), and Xu Zhi-Mou(徐智谋) |
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Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film |
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Chin. Phys. B
2012 Vol.21 (6): 67702-067702
[Abstract]
(1330)
[HTML 1 KB]
[PDF 425 KB]
(1067)
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67202 |
Jiao Zhi-Qiang(焦志强), Wu Xiao-Ming(吴晓明), Hua Yu-Lin(华玉林), Mu Xue(穆雪), Bi Wen-Tao(毕文涛), Bai Juan-Juan(白娟娟), and Yin Shou-Gen(印寿根) |
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Improved performance of organic light-emitting diodes with dual electron transporting layers |
| |
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Chin. Phys. B
2012 Vol.21 (6): 67202-067202
[Abstract]
(1312)
[HTML 1 KB]
[PDF 407 KB]
(1171)
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67103 |
Du Yu-Jie(杜玉杰), Chang Ben-Kang(常本康), Wang Hong-Gang(王洪刚), Zhang Jun-Ju(张俊举), and Wang Mei-Shan(王美山) |
| |
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Comparative study of adsorption characteristics of Cs on the GaN (0001) and GaN (0001) surfaces |
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Chin. Phys. B
2012 Vol.21 (6): 67103-067103
[Abstract]
(1301)
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[PDF 367 KB]
(628)
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64218 |
Bai Zhi-Yong(白志勇), Deng Dong-Mei(邓冬梅), and Guo Qi(郭旗) |
| |
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Elegant Ince–Gaussian breathers in strongly nonlocal nonlinear media |
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Chin. Phys. B
2012 Vol.21 (6): 64218-064218
[Abstract]
(1611)
[HTML 1 KB]
[PDF 643 KB]
(604)
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58503 |
Su Yue-Ju(苏跃举), Wu Xiao-Ming(吴晓明), Hua Yu-Lin(华玉林), Shen Li-Ying(申利莹), Jiao Zhi-Qiang(焦志强), Dong Mu-Sen(董木森), and Yin Shou-Gen(印寿根) |
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Highly efficient blue fluorescent OLEDs with doped double emitting layers based on p–n heterojunctions |
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Chin. Phys. B
2012 Vol.21 (5): 58503-058503
[Abstract]
(1706)
[HTML 1 KB]
[PDF 165 KB]
(1479)
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57201 |
Duan Bao-Xing(段宝兴) and Yang Yin-Tang(杨银堂) |
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Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer |
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Chin. Phys. B
2012 Vol.21 (5): 57201-057201
[Abstract]
(1378)
[HTML 1 KB]
[PDF 562 KB]
(1478)
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57110 |
Zhao Jun-Qing(赵俊卿), Ding Meng(丁猛), Zhang Tian-You(张天佑), Zhang Ning-Yu(张宁玉), Pang Yan-Tao(庞岩涛), Ji Yan-Ju(季燕菊), Chen Ying(陈莹), Wang Feng-Xiang(王凤翔), and Fu Gang(付刚) |
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The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors |
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Chin. Phys. B
2012 Vol.21 (5): 57110-057110
[Abstract]
(1616)
[HTML 1 KB]
[PDF 242 KB]
(992)
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38101 |
Fan Hai-Bo(范海波), Zheng Xin-Liang(郑新亮), Wu Si-Cheng(吴思诚), Liu Zhi-Gang(刘志刚), and Yao He-Bao(姚合宝) |
| |
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Zn/O ratio and oxygen chemical state of nanocrystalline ZnO films grown at different temperatures |
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Chin. Phys. B
2012 Vol.21 (3): 38101-038101
[Abstract]
(1128)
[HTML 1 KB]
[PDF 566 KB]
(1350)
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37202 |
Wu Ke(吴珂), Huang Qi-Huan(黄齐晅), Zhang Han-Jie(张寒洁), Liao Qing(廖清), and He Pi-Mo(何丕模) |
| |
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Adsorption behavior of iron phthalocyanine on a Ag(110) surface |
| |
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Chin. Phys. B
2012 Vol.21 (3): 37202-037202
[Abstract]
(1092)
[HTML 1 KB]
[PDF 642 KB]
(609)
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37105 |
Huang Xiao-Hui(黄小辉), Liu Jian-Ping(刘建平), Fan Ya-Ming(范亚明), Kong Jun-Jie(孔俊杰), Yang Hui(杨辉), and Wang Huai-Bing(王怀兵) |
| |
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Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape |
| |
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Chin. Phys. B
2012 Vol.21 (3): 37105-037105
[Abstract]
(1431)
[HTML 1 KB]
[PDF 257 KB]
(1994)
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37104 |
LŰ Ling(吕玲), Zhang Jin-Cheng(张进成), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Zhang Wei(张伟), Bi Zhi-Wei(毕志伟), Zhang Yue(张月), and Hao Yue(郝跃) |
| |
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Neutron irradiation effects on AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2012 Vol.21 (3): 37104-037104
[Abstract]
(1371)
[HTML 1 KB]
[PDF 330 KB]
(1708)
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27803 |
Xue Xiao-Yong(薛晓咏), Xu Sheng-Rui(许晟瑞), Zhang Jin-Cheng(张进成), Lin Zhi-Yu(林志宇), Ma Jun-Cai(马俊彩), Liu Zi-Yang(刘子扬), Xue Jun-Shuai(薛军帅), and Hao Yue(郝跃) |
| |
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Temperature dependences of Raman scattering in different types of GaN epilayers |
| |
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Chin. Phys. B
2012 Vol.21 (2): 27803-027803
[Abstract]
(1183)
[HTML 1 KB]
[PDF 195 KB]
(1042)
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27802 |
Xu Sheng-Rui(许晟瑞), Zhang Jin-Feng(张金风), Gu Wen-Ping(谷文萍), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Zhou Xiao-Wei(周小伟), Lin Zhi-Yu(林志宇), and Mao Wei(毛维) |
| |
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Structural and optical investigation of nonpolar α-plane GaN grown by metal–organic chemical vapour deposition on r-plane sapphire by neutron irradiation |
| |
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Chin. Phys. B
2012 Vol.21 (2): 27802-027802
[Abstract]
(1054)
[HTML 1 KB]
[PDF 1014 KB]
(683)
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27305 |
Zhou Jian-Lin(周建林), Yu Jun-Sheng(于军胜), Yu Xin-Ge(于欣格), and Cai Xin-Yang(蔡欣洋) |
| |
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A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes |
| |
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Chin. Phys. B
2012 Vol.21 (2): 27305-027305
[Abstract]
(1044)
[HTML 1 KB]
[PDF 1560 KB]
(1535)
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17103 |
Cao Zhi-Fang(曹芝芳), Lin Zhao-Jun(林兆军), LŰ Yuan-Jie(吕元杰), Luan Chong-Biao(栾崇彪), Yu Ying-Xia(于英霞), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) |
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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes |
| |
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Chin. Phys. B
2012 Vol.21 (1): 17103-017103
[Abstract]
(1356)
[HTML 1 KB]
[PDF 247 KB]
(1183)
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98503 |
Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) |
| |
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The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer |
| |
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Chin. Phys. B
2011 Vol.20 (9): 98503-098503
[Abstract]
(1450)
[HTML 1 KB]
[PDF 172 KB]
(1753)
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98101 |
Du Yan-Hao(杜彦浩), Wu Jie-Jun(吴洁君), Luo Wei-Ke(罗伟科), John Goldsmith, Han Tong(韩彤), Tao Yue-Bin(陶岳彬), Yang Zhi-Jian(杨志坚), Yu Tong-Jun(于彤军), and Zhang Guo-Yi(张国义) |
| |
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Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy |
| |
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Chin. Phys. B
2011 Vol.20 (9): 98101-098101
[Abstract]
(1524)
[HTML 1 KB]
[PDF 189 KB]
(843)
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97701 |
Liu Zi-Yang(刘子扬), Zhang Jin-Cheng(张进成), Duan Huan-Tao(段焕涛), Xue Jun-Shuai(薛军帅),Lin Zhi-Yu(林志宇), Ma Jun-Cai(马俊彩), Xue Xiao-Yong(薛晓咏), and Hao Yue(郝跃) |
| |
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Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures |
| |
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Chin. Phys. B
2011 Vol.20 (9): 97701-097701
[Abstract]
(1504)
[HTML 0 KB]
[PDF 222 KB]
(2566)
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97302 |
Ma Xiao-Hua(马晓华), Ma Ping(马平), Jiao Ying(焦颖), Yang Li-Yuan(杨丽媛), Ma Ji-Gang(马骥刚), He Qiang(贺强), Jiao Sha-Sha(焦莎莎), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
| |
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Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures |
| |
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Chin. Phys. B
2011 Vol.20 (9): 97302-097302
[Abstract]
(1520)
[HTML 1 KB]
[PDF 544 KB]
(941)
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97202 |
Wang Jian-Yuan(王建元), Zhai Wei(翟薇), Jin Ke-Xin(金克新), and Chen Chang-Le(陈长乐) |
| |
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Transport properties and magnetoresistance in La0.8Te0.2MnO3/ZrO2 composites |
| |
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Chin. Phys. B
2011 Vol.20 (9): 97202-097202
[Abstract]
(1444)
[HTML 0 KB]
[PDF 159 KB]
(655)
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97106 |
Lü Yuan-Jie(吕元杰), Lin Zhao-Jun(林兆军), Zhang Yu(张宇), Meng Ling-Guo(孟令国), Cao Zhi-Fang(曹芝芳), Luan Chong-Biao(栾崇彪), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) |
| |
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Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts |
| |
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Chin. Phys. B
2011 Vol.20 (9): 97106-097106
[Abstract]
(1551)
[HTML 1 KB]
[PDF 151 KB]
(873)
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96401 |
Jiang Yu-Hang(姜宇航), Liu Li-Wei(刘立巍), Yang Kai(杨锴), Xiao Wen-De(肖文德), and Gao Hong-Jun(高鸿钧) |
| |
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Self-assembly and growth of manganese phthalocyanine on an Au(111) surface |
| |
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Chin. Phys. B
2011 Vol.20 (9): 96401-096401
[Abstract]
(1566)
[HTML 0 KB]
[PDF 227 KB]
(768)
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94207 |
Wang Yu-Zhou(王宇宙), Li Ding(李丁), Li Lei(李磊),Liu Ning-Yang(刘宁炀), Liu Lei(刘磊),Cao Wen-Yu(曹文彧), Chen Wei-Hua(陈伟华), and Hu Xiao-Dong(胡晓东) |
| |
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Intersubband transitions in Al0.82In0.18N/GaN single quantum well |
| |
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Chin. Phys. B
2011 Vol.20 (9): 94207-094207
[Abstract]
(1428)
[HTML 0 KB]
[PDF 200 KB]
(883)
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94202 |
Bai Zhi-Yong(白志勇), Deng Dong-Mei(邓冬梅), and Guo Qi(郭旗) |
| |
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Elegant Ince–Gaussian beams in a quadratic-index medium |
| |
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Chin. Phys. B
2011 Vol.20 (9): 94202-094202
[Abstract]
(1362)
[HTML 0 KB]
[PDF 199 KB]
(1083)
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87307 |
Bi Zhi-Wei(毕志伟), Hu Zhen-Hua(胡振华), Mao Wei(毛维), Hao Yue(郝跃), Feng Qian(冯倩), Cao Yan-Rong(曹艳荣), Gao Zhi-Yuan(高志远), Zhang Jin-Cheng(张进成), Ma Xiao-Hua(马晓华), Chang Yong-Ming(常永明), Li Zhi-Ming(李志明), and Mei Nan(梅楠) |
| |
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Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study |
| |
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Chin. Phys. B
2011 Vol.20 (8): 87307-087307
[Abstract]
(1334)
[HTML 1 KB]
[PDF 179 KB]
(1065)
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87306 |
Wang Hong(王宏), Ji Zhuo-Yu(姬濯宇), Shang Li-Wei(商立伟), Liu Xing-Hua(刘兴华), Peng Ying-Quan(彭应全), and Liu Ming(刘明) |
| |
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Top contact organic field effect transistors fabricated using a photolithographic process |
| |
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Chin. Phys. B
2011 Vol.20 (8): 87306-087306
[Abstract]
(1385)
[HTML 1 KB]
[PDF 873 KB]
(955)
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86601 |
E. Salmani, A. Benyoussef, H. Ez-Zahraouy, and E.H. Saidi |
| |
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Magnetic properties of Mn-doped GaN with defects: ab-initio calculations |
| |
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Chin. Phys. B
2011 Vol.20 (8): 86601-086601
[Abstract]
(1315)
[HTML 0 KB]
[PDF 2190 KB]
(1502)
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77804 |
Zhu Ji-Hong(朱继红), Wang Liang-Ji(王良吉), Zhang Shu-Ming(张书明), Wang Hui(王辉), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), and Yang Hui(杨辉) |
| |
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Simulation of the light extraction efficiency of nanostructure light-emitting diodes |
| |
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Chin. Phys. B
2011 Vol.20 (7): 77804-077804
[Abstract]
(1467)
[HTML 1 KB]
[PDF 654 KB]
(1311)
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77306 |
Hu Gui-Chao(胡贵超), Wang Hui(王辉), and Ren Jun-Feng(任俊峰) |
| |
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Effect of proportion on rectification in organic co-oligomer spin rectifiers |
| |
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Chin. Phys. B
2011 Vol.20 (7): 77306-077306
[Abstract]
(1456)
[HTML 0 KB]
[PDF 168 KB]
(669)
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76101 |
Zhao Wei(赵维), Wang Lai(汪莱), Wang Jia-Xing(王嘉星), and Luo Yi(罗毅) |
| |
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Luminescence properties of InxGa1 - xN (x ～ 0.04) films grown by metal organic vapour phase epitaxy |
| |
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Chin. Phys. B
2011 Vol.20 (7): 76101-076101
[Abstract]
(1405)
[HTML 0 KB]
[PDF 6656 KB]
(809)
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68502 |
Li Hai-Ou(李海鸥), Huang Wei(黄伟), Tang Chak Wah(邓泽华), Deng Xiao-Fang(邓小芳), and Lau Kei May(刘纪美) |
| |
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Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition |
| |
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Chin. Phys. B
2011 Vol.20 (6): 68502-068502
[Abstract]
(1460)
[HTML 1 KB]
[PDF 814 KB]
(916)
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67304 |
Ma Xiao-Hua(马晓华), Ma Ji-Gang(马骥刚), Yang Li-Yuan(杨丽媛), He Qiang(贺强), Jiao Ying(焦颖), Ma Ping(马平), and Hao Yue(郝跃) |
| |
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Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress |
| |
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Chin. Phys. B
2011 Vol.20 (6): 67304-067304
[Abstract]
(1523)
[HTML 1 KB]
[PDF 450 KB]
(1975)
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67303 |
Liu Fang(刘芳), Qin Zhi-Xin(秦志新), Xu Fu-Jun(许福军), Zhao Sheng(赵胜), Kang Xiang-Ning(康香宁), Shen Bo(沈波), and Zhang Guo-Yi(张国义) |
| |
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Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN |
| |
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Chin. Phys. B
2011 Vol.20 (6): 67303-067303
[Abstract]
(1613)
[HTML 0 KB]
[PDF 279 KB]
(1845)
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58501 |
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
| |
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Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor |
| |
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Chin. Phys. B
2011 Vol.20 (5): 58501-058501
[Abstract]
(1477)
[HTML 0 KB]
[PDF 284 KB]
(842)
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57801 |
Zhang Jin-Feng (张金风), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
| |
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Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization |
| |
|
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Chin. Phys. B
2011 Vol.20 (5): 57801-057801
[Abstract]
(1499)
[HTML 1 KB]
[PDF 1777 KB]
(1378)
|
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|
56101 |
Fa Tao (法涛), Li Lin (李琳), Yao Shu-De (姚淑德), Wu Ming-Fang (吴名枋), Zhou Sheng-Qiang (周生强) |
| |
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Unidirectional expansion of lattice parameters in GaN induced by ion implantation |
| |
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Chin. Phys. B
2011 Vol.20 (5): 56101-056101
[Abstract]
(1276)
[HTML 0 KB]
[PDF 1571 KB]
(1080)
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47105 |
Lü Yuan-Jie(吕元杰), Lin Zhao-Jun(林兆军), Zhang Yu(张宇), Meng Ling-Guo(孟令国), Cao Zhi-Fang(曹芝芳), Luan Chong-Biao(栾崇彪), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) |
| |
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Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts |
| |
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Chin. Phys. B
2011 Vol.20 (4): 47105-047105
[Abstract]
(1353)
[HTML 1 KB]
[PDF 329 KB]
(808)
|
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|
38401 |
Zhang Tian-Hui(张天慧), Zhao Su-Ling (赵谡玲), Piao Ling-Yu(朴玲钰), Xu Zheng(徐征), Ju Si-Ting(鞠思婷), Liu Xiao-Dong(刘晓东), Kong Chao(孔超), and Xu Xu-Rong(徐叙瑢) |
| |
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Solar cells based on the poly(N-vinylcarbazole):porphyrin: tris(8-hydroxyquinolinato) aluminium blend system |
| |
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Chin. Phys. B
2011 Vol.20 (3): 38401-038401
[Abstract]
(1533)
[HTML 1 KB]
[PDF 423 KB]
(1469)
|
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|
37902 |
Fu Xiao-Qian(付小倩), Chang Ben-Kang(常本康), Wang Xiao-Hui(王晓晖), Li Biao(李飙), Du Yu-Jie(杜玉杰), and Zhang Jun-Ju(张俊举) |
| |
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Photoemission of graded-doping GaN photocathode |
| |
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Chin. Phys. B
2011 Vol.20 (3): 37902-037902
[Abstract]
(1338)
[HTML 1 KB]
[PDF 223 KB]
(1201)
|
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37807 |
Lu Hui-Min(路慧敏) and Chen Gen-Xiang(陈根祥) |
| |
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Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED |
| |
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Chin. Phys. B
2011 Vol.20 (3): 37807-037807
[Abstract]
(1405)
[HTML 0 KB]
[PDF 377 KB]
(723)
|
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37805 |
Du Da-Chao(杜大超), Zhang Jin-Cheng(张进成), Ou Xin-Xiu(欧新秀), Wang Hao(王昊), Chen Ke(陈珂), Xue Jun-Shuai(薛军帅), Xu Sheng-Rui(许晟瑞), and Hao Yue(郝跃) |
| |
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Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN |
| |
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Chin. Phys. B
2011 Vol.20 (3): 37805-037805
[Abstract]
(1362)
[HTML 0 KB]
[PDF 345 KB]
(1585)
|
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|
36106 |
Cheng Zhi-Qun(程知群), Hu Sha(胡莎), Liu Jun(刘军), and Zhang Qi-Jun |
| |
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Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network |
| |
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Chin. Phys. B
2011 Vol.20 (3): 36106-036106
[Abstract]
(1454)
[HTML 1 KB]
[PDF 316 KB]
(1341)
|
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|
28402 |
Zhang Xiao-Bin(张小宾), Wang Xiao-Liang(王晓亮), Xiao Hong-Ling(肖红领), Yang Cui-Bai(杨翠柏), Hou Qi-Feng(侯奇峰), Yin Hai-Bo(殷海波), Chen Hong(陈竑), and Wang Zhan-Guo(王占国) |
| |
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InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage |
| |
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Chin. Phys. B
2011 Vol.20 (2): 28402-028402
[Abstract]
(1446)
[HTML 1 KB]
[PDF 596 KB]
(2593)
|
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28201 |
Chen Ying-Chao(陈颖超),Xie Kai(谢凯),Pan Yi(盘毅), Zheng Chun-Man(郑春满),and Wang Hua-Lin(王华林) |
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High power nano-LiMn2O4 cathode materials with high-rate pulse discharge capability for lithium-ion batteries |
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Chin. Phys. B
2011 Vol.20 (2): 28201-028201
[Abstract]
(1356)
[HTML 0 KB]
[PDF 4502 KB]
(3261)
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27306 |
Li Nuo(李诺),Gao Xin-Dong(高歆栋),Xie Zuo-Ti(谢作提), Sun Zheng-Yi(孙正义), Ding Xun-Min(丁训民),and Hou Xiao-Yuan(侯晓远) |
| |
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Negative capacitance in doped bi-layer organic light-emitting devices |
| |
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Chin. Phys. B
2011 Vol.20 (2): 27306-027306
[Abstract]
(1390)
[HTML 0 KB]
[PDF 689 KB]
(983)
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27304 |
Ma Xiao-Hua(马晓华), Pan Cai-Yuan(潘才渊), Yang Li-Yuan(杨丽媛), Yu Hui-You(于惠游), Yang Ling(杨凌), Quan Si(全思), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
| |
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Characterization of Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths |
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Chin. Phys. B
2011 Vol.20 (2): 27304-027304
[Abstract]
(1365)
[HTML 1 KB]
[PDF 662 KB]
(1388)
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27303 |
Ma Xiao-Hua(马晓华), Yu Hui-You(于惠游), Quan Si(全思), Yang Li-Yuan(杨丽媛), Pan Cai-Yuan(潘才渊), Yang Ling(杨凌), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
| |
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Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier |
| |
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Chin. Phys. B
2011 Vol.20 (2): 27303-027303
[Abstract]
(1636)
[HTML 1 KB]
[PDF 838 KB]
(1058)
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20513 |
Wang Xiao-Chun(王晓春), Zhao Han-Yue(赵寒月), Chen Nan-Xian(陈难先), and Zhang Yong(张勇) |
| |
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Tuning of the periodicity of stable self-organized metallic templates |
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Chin. Phys. B
2011 Vol.20 (2): 20513-020513
[Abstract]
(1291)
[HTML 1 KB]
[PDF 3016 KB]
(808)
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127306 |
Le Ling-Cong(乐伶聪), Zhao De-Gang(赵德刚), Wu Liang-Liang(吴亮亮), Deng Yi(邓懿), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Zhang Bao-Shun(张宝顺), and Yang Hui(杨辉) |
| |
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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition |
| |
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Chin. Phys. B
2011 Vol.20 (12): 127306-127306
[Abstract]
(1337)
[HTML 1 KB]
[PDF 149 KB]
(1471)
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127305 |
Ma Xiao-Hua(马晓华), Jiao Ying(焦颖), Ma Ping(马平), He Qiang(贺强), Ma Ji-Gang(马骥刚), Zhang Kai(张凯), Zhang Hui-Long(张会龙), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
| |
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The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses |
| |
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Chin. Phys. B
2011 Vol.20 (12): 127305-127305
[Abstract]
(1503)
[HTML 1 KB]
[PDF 271 KB]
(1238)
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127303 |
Chen Yue-Ning(陈跃宁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Yin Fei-Fei(尹飞飞), Zhang Cheng-Wen(张成文), Jiao Bi-Yuan(焦碧媛), and Dong Yu-Hang (董宇航) |
| |
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Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance |
| |
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Chin. Phys. B
2011 Vol.20 (12): 127303-127303
[Abstract]
(1427)
[HTML 1 KB]
[PDF 430 KB]
(663)
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120204 |
Xing Qi-Bin(邢琦彬), Zhang Yuan-Biao(张元标), Liang Zhi-Ning(梁志宁), and Zhang Fan(张帆) |
| |
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Dynamics of organizational rumor communication on connecting multi-small-world networks |
| |
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Chin. Phys. B
2011 Vol.20 (12): 120204-120204
[Abstract]
(1224)
[HTML 1 KB]
[PDF 618 KB]
(941)
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117302 |
Yang Li-Yuan(杨丽媛), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Pan Cai-Yuan(潘才渊), Ma Ji-Gang (马骥刚), Zhang Kai(张凯), and Ma Ping(马平) |
| |
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High temperature characteristics of AlGaN/GaN high electron mobility transistors |
| |
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Chin. Phys. B
2011 Vol.20 (11): 117302-117302
[Abstract]
(1334)
[HTML 1 KB]
[PDF 359 KB]
(1800)
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116801 |
Xie Zi-Li(谢自力), Zhang Rong(张荣), Fu De-Yi(傅德颐), Liu Bin(刘斌),Xiu Xiang-Qian(修向前), Hua Xue-Mei(华雪梅), Zhao Hong(赵红), Chen Peng(陈鹏),Han Ping(韩平), Shi Yi(施毅), and Zheng You-Dou(郑有炓) |
| |
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Growth and properties of wide spectral white light emitting diodes |
| |
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Chin. Phys. B
2011 Vol.20 (11): 116801-116801
[Abstract]
(1210)
[HTML 0 KB]
[PDF 148 KB]
(657)
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108504 |
Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) |
| |
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Blue InGaN light-emitting diodes with dip-shaped quantum wells |
| |
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Chin. Phys. B
2011 Vol.20 (10): 108504-108504
[Abstract]
(1269)
[HTML 1 KB]
[PDF 190 KB]
(1099)
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108102 |
Liu Ying-Ying(刘莹莹), Zhu Jun(朱俊), Luo Wen-Bo(罗文博), Hao Lan-Zhong(郝兰众), Zhang Ying(张鹰), and Li Yan-Rong(李言荣) |
| |
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Effect of thickness on the microstructure of GaN films on Al2O3 (0001) by laser molecular beam epitaxy |
| |
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Chin. Phys. B
2011 Vol.20 (10): 108102-108102
[Abstract]
(1241)
[HTML 0 KB]
[PDF 237 KB]
(917)
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107803 |
Jiao Zhi-Qiang(焦志强), Wu Xiao-Ming(吴晓明), Hua Yu-Lin(华玉林), Dong Mu-Sen(董木森), Su Yue-Ju(苏跃举), Shen Li-Ying(申利莹), and Yin Shou-Gen(印寿根) |
| |
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Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer |
| |
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Chin. Phys. B
2011 Vol.20 (10): 107803-107803
[Abstract]
(1450)
[HTML 1 KB]
[PDF 162 KB]
(891)
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107802 |
Xu Sheng-Rui(许晟瑞), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Xue Xiao-Yong(薛晓咏), Li Pei-Xian(李培咸), Li Jian-Ting(李建婷), Lin Zhi-Yu(林志宇), Liu Zi-Yang(刘子扬), Ma Jun-Cai(马俊彩), He Qiang(贺强), and Lü Ling(吕玲) |
| |
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Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate |
| |
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Chin. Phys. B
2011 Vol.20 (10): 107802-107802
[Abstract]
(1453)
[HTML 0 KB]
[PDF 883 KB]
(1850)
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106801 |
Xie Zi-Li(谢自力), Li Yi(李弋), Liu Bin(刘斌), Zhang Rong(张荣), Xiu Xiang-Qian(修向前), Chen Peng(陈鹏), and Zheng You-Liao(郑有炓) |
| |
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Effects of V/III ratio on the growth of a-plane GaN films |
| |
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Chin. Phys. B
2011 Vol.20 (10): 106801-106801
[Abstract]
(1416)
[HTML 0 KB]
[PDF 238 KB]
(1627)
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18101 |
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
| |
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Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis |
| |
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Chin. Phys. B
2011 Vol.20 (1): 18101-018101
[Abstract]
(1714)
[HTML 1 KB]
[PDF 634 KB]
(1104)
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17804 |
Fang Hao(方浩),Long Hao(龙浩),Sang Li-Wen(桑立雯), Qi Sheng-Li(齐胜利),Xiong Chang(熊畅),Yu Tong-Jun(于彤军), Yang Zhi-Jian(杨志坚),and Zhang Guo-Yi(张国义) |
| |
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Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition |
| |
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Chin. Phys. B
2011 Vol.20 (1): 17804-017804
[Abstract]
(1603)
[HTML 0 KB]
[PDF 1916 KB]
(976)
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17306 |
Sun Qin-Jun(孙钦军), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), and Gao Li-Yan(高利岩) |
| |
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Performance improvement in pentacene organic thin film transistors by inserting a C60 ultrathin layer |
| |
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Chin. Phys. B
2011 Vol.20 (1): 17306-017306
[Abstract]
(1489)
[HTML 1 KB]
[PDF 480 KB]
(1210)
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17202 |
Zang Yue(臧月), Yu Jun-Sheng(于军胜), Wang Na-Na(王娜娜), and Jiang Ya-Dong(蒋亚东) |
| |
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Detailed analysis of ultrathin fluorescent red dye interlayer for organic photovoltaic cells |
| |
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Chin. Phys. B
2011 Vol.20 (1): 17202-017202
[Abstract]
(1558)
[HTML 1 KB]
[PDF 1115 KB]
(910)
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98601 |
Feng Zhi-Hui(冯志慧), Hou Yan-Bing(侯延冰), Shi Quan-Min(师全民), Liu Xiao-Jun(刘小君), and Teng Feng(滕枫) |
| |
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Effect of slow-solvent-vapour treatment on performance of polymer photovoltaic devices |
| |
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Chin. Phys. B
2010 Vol.19 (9): 98601-098601
[Abstract]
(1369)
[HTML 0 KB]
[PDF 1834 KB]
(885)
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97302 |
Wang Xin-Hua(王鑫华), Zhao Miao(赵妙), Liu Xin-Yu(刘新宇), Pu Yan(蒲颜), Zheng Ying-Kui(郑英奎), and Wei Ke(魏珂) |
| |
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The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors |
| |
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Chin. Phys. B
2010 Vol.19 (9): 97302-097302
[Abstract]
(1805)
[HTML 0 KB]
[PDF 193 KB]
(3640)
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87102 |
Li Deng-Feng(李登峰), Xiao Hai-Yan(肖海燕), Zu Xiao-Tao(祖小涛), Dong Hui-Ning(董会宁), and Gao Fei(高飞) |
| |
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Structural, electronic and magnetic properties of the Mn–Ni(110) c(2×2) surface alloy |
| |
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Chin. Phys. B
2010 Vol.19 (8): 87102-087102
[Abstract]
(1569)
[HTML 1 KB]
[PDF 399 KB]
(743)
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86106 |
Xiao Hong-Di(肖洪地), Mao Hong-Zhi(毛宏志), Lin Zhao-Jun(林兆军), and Ma Hong-Lei(马洪磊) |
| |
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Effect of high temperature annealing on strain and band gap of GaN nanoparticles |
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Chin. Phys. B
2010 Vol.19 (8): 86106-086106
[Abstract]
(1612)
[HTML 1 KB]
[PDF 727 KB]
(1150)
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80517 |
Huan Qing(郇庆), Hu Hao(胡昊), Pan Li-Da(潘理达), Xiao Jiang(肖江), Du Shi-Xuan(杜世萱), and Gao Hong-Jun(高鸿钧) |
| |
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Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO2 and mica substrates |
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Chin. Phys. B
2010 Vol.19 (8): 80517-080517
[Abstract]
(1618)
[HTML 0 KB]
[PDF 426 KB]
(624)
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77305 |
Zhou Jian-Lin (周建林), Niu Qiao-Li (牛巧利) |
| |
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Properties of C60 thin film transistor based on polystyrene |
| |
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Chin. Phys. B
2010 Vol.19 (7): 77305-077305
[Abstract]
(1332)
[HTML 1 KB]
[PDF 2677 KB]
(930)
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77303 |
Bi Zhi-Wei(毕志伟), Feng Qian(冯倩), Hao Yue(郝跃), Wang Dang-Hui(王党会), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Quan Si(全思), and Xu Sheng-Rui(许晟瑞) |
| |
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AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition |
| |
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Chin. Phys. B
2010 Vol.19 (7): 77303-077303
[Abstract]
(1721)
[HTML 0 KB]
[PDF 662 KB]
(867)
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76803 |
Wang Lai(汪莱), Wang Jia-Xing(王嘉星), Zhao Wei(赵维), Zou Xiang(邹翔), and Luo Yi(罗毅) |
| |
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Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells |
| |
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Chin. Phys. B
2010 Vol.19 (7): 76803-076803
[Abstract]
(1459)
[HTML 1 KB]
[PDF 112 KB]
(1365)
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68101 |
He An-He(何安和), Zhang Yong(章勇), Zhu Xue-Hui(朱学绘), Chen Xian-Wen(陈献文), Fan Guang-Han(范广涵), and He Miao(何苗) |
| |
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Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching |
| |
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Chin. Phys. B
2010 Vol.19 (6): 68101-068101
[Abstract]
(1390)
[HTML 1 KB]
[PDF 2200 KB]
(1818)
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67803 |
Huang Jin-Zhao(黄金昭), Li Shi-Shuai(李世帅), Feng Xiu-Peng(冯秀鹏), Wang Pei-Ji(王培吉), and Zhang Zhong(张仲) |
| |
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Confirmation on origin of primary electron in solid state cathodoluminescence |
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Chin. Phys. B
2010 Vol.19 (6): 67803-067803
[Abstract]
(1645)
[HTML 1 KB]
[PDF 106 KB]
(602)
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67101 |
Cai Jin-Ming(蔡金明), Zhang Yu-Yang(张余洋), Hu Hao(胡昊), Bao Li-Hong(鲍丽宏), Pan Li-Da(潘理达), Tang Wei(唐卫), Li Guo(李果), Du Shi-Xuan(杜世萱), Shen Jian(沈健), and Gao Hong-Jun(高鸿钧) |
| |
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Electric dipolar interaction assisted growth of single crystalline organic thin films |
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Chin. Phys. B
2010 Vol.19 (6): 67101-067101
[Abstract]
(1702)
[HTML 1 KB]
[PDF 8310 KB]
(726)
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57802 |
Zhao De-Gang(赵德刚), Zhang Shuang(张爽), Liu Wen-Bao(刘文宝), Hao Xiao-Peng(郝小鹏), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Yang Hui(杨辉), and Wei Long(魏龙) |
| |
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Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors |
| |
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Chin. Phys. B
2010 Vol.19 (5): 57802-057802
[Abstract]
(1271)
[HTML 1 KB]
[PDF 327 KB]
(917)
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57203 |
Xue Jun-Shuai(薛军帅), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), and Ni Jin-Yu(倪金玉) |
| |
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Comparative study of different properties of GaN films grown on(0001) sapphire using high and low temperature AlN interlayers |
| |
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Chin. Phys. B
2010 Vol.19 (5): 57203-057203
[Abstract]
(1302)
[HTML 1 KB]
[PDF 187 KB]
(906)
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47802 |
Zhang Wei(张巍), Yu Jun-Sheng(于军胜), Huang Jiang(黄江), Jiang Ya-Dong(蒋亚东), Zhang Qing(张清), and Cao Kang-Li(曹康丽) |
| |
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Exciplex elimination in an organic light-emitting diode based on a fluorene derivative by inserting 4,4'-N,N'-dicarbazole-biphenyl into donor/acceptor interface |
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Chin. Phys. B
2010 Vol.19 (4): 47802-047802
[Abstract]
(1336)
[HTML 1 KB]
[PDF 172 KB]
(977)
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47301 |
Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高) |
| |
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Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors |
| |
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Chin. Phys. B
2010 Vol.19 (4): 47301-047301
[Abstract]
(1538)
[HTML 1 KB]
[PDF 409 KB]
(1459)
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47205 |
Huang Jun-Yi(黄俊毅), Fan Guang-Han(范广涵), Zheng Shu-Wen(郑树文), Niu Qiao-Li(牛巧利), Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Su Jun(苏军), and Zhang Yong(章勇) |
| |
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Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes |
| |
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Chin. Phys. B
2010 Vol.19 (4): 47205-047205
[Abstract]
(1541)
[HTML 1 KB]
[PDF 459 KB]
(1784)
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38602 |
Wang Na-Na(王娜娜), Yu Jun-Sheng(于军胜), Zang Yue(臧月), and Jiang Ya-Dong(蒋亚东) |
| |
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Photocurrent analysis of organic photovoltaic cells based on CuPc/C60 with Alq3 as a buffer layer |
| |
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Chin. Phys. B
2010 Vol.19 (3): 38602-038602
[Abstract]
(1607)
[HTML 1 KB]
[PDF 226 KB]
(1309)
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37804 |
Yan Guang(闫光), Zhao Su-Ling(赵谡玲), Xu Zheng(徐征), Zhang Fu-Jun(张福俊), Kong Chao(孔超), Zhu Hai-Na(朱海娜), Song Dan-Dan(宋丹丹), and Xu Xu-Rong(徐叙瑢) |
| |
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Electroluminescence quenching mechanism in Rubrene doped host－guest system |
| |
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Chin. Phys. B
2010 Vol.19 (3): 37804-037804
[Abstract]
(1766)
[HTML 1 KB]
[PDF 210 KB]
(979)
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37801 |
Chen Fei-Peng(陈飞鹏), Xu Bin(徐斌), Zhao Zu-Jin(赵祖金), Tian Wen-Jing (田文晶), LÜ Ping(吕萍), and Im Chan |
| |
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White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends |
| |
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Chin. Phys. B
2010 Vol.19 (3): 37801-037801
[Abstract]
(1801)
[HTML 1 KB]
[PDF 450 KB]
(969)
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37105 |
Wei Bin(魏斌), Liao Ying-Jie (廖英杰), Liu Ji-Zhong (刘纪忠), Lu Lin(路林), Cao Jin(曹进), Wang Jun (王军), and Zhang Jian-Hua (张建华) |
| |
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Dependence of charge trapping of fluorescent and phosphorescent dopants in organic light-emitting diodes on the dye species and current density |
| |
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Chin. Phys. B
2010 Vol.19 (3): 37105-037105
[Abstract]
(1750)
[HTML 1 KB]
[PDF 990 KB]
(1102)
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36801 |
Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Chen Gui-Feng(陈贵锋), Zhang Shu-Ming(张书明), Jiang De-Sheng(江德生), Liu Zong-Shun(刘宗顺), Zhao De-Gang(赵德刚), Wang Hui(王辉), Wang Yu-Tian(王玉田), and Yang Hui(杨辉) |
| |
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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer |
| |
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Chin. Phys. B
2010 Vol.19 (3): 36801-036801
[Abstract]
(1776)
[HTML 1 KB]
[PDF 2177 KB]
(3110)
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26804 |
Lu Guo-Jun(卢国军), Zhu Jian-Jun(朱建军), Jiang De-Sheng(江德生), Wang Yu-Tian(王玉田),Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺),Zhang Shu-Ming(张书明), and Yang Hui(杨辉) |
| |
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Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition |
| |
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Chin. Phys. B
2010 Vol.19 (2): 26804-026804
[Abstract]
(1538)
[HTML 1 KB]
[PDF 1455 KB]
(823)
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124211 |
Ji Lian(季莲), Jiang De-Sheng(江德生), Zhang Shu-Ming(张书明), Liu Zong-Shun(刘宗顺), Zeng Chang(曾畅), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Wang Hui(王辉), Duan Li-Hong(段俐宏), and Yang Hui(杨辉) |
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Time delay in InGaN multiple quantum well laser diodes at room temperature |
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Chin. Phys. B
2010 Vol.19 (12): 124211-124211
[Abstract]
(1484)
[HTML 1 KB]
[PDF 273 KB]
(807)
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117801 |
Hu Xiao-Long(胡晓龙), Zhang Jiang-Yong(张江勇), Shang Jing-Zhi(尚景智), Liu Wen-Jie(刘文杰), and Zhang Bao-Ping(张保平) |
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The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses |
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Chin. Phys. B
2010 Vol.19 (11): 117801-117801
[Abstract]
(1510)
[HTML 1 KB]
[PDF 207 KB]
(1162)
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117306 |
Xie Yan-Wu (谢燕武), Guo De-Feng (郭得峰), Sun Ji-Rong(孙继荣), and Shen Bao-Gen(沈保根) |
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Effect of film thickness on interfacial barrier of manganite-based heterojunctions |
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Chin. Phys. B
2010 Vol.19 (11): 117306-110203
[Abstract]
(1377)
[HTML 1 KB]
[PDF 942 KB]
(664)
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117104 |
Hao Guo-Dong(郝国栋), Chen Yong-Hai(陈涌海), Fan Ya-Ming(范亚明), Huang Xiao-Hui(黄晓辉), and Wang Huai-Bing(王怀兵) |
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Strain effects on optical polarisation properties in (1122) plane GaN films |
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Chin. Phys. B
2010 Vol.19 (11): 117104-117105
[Abstract]
(1429)
[HTML 1 KB]
[PDF 986 KB]
(588)
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107305 |
Wang Ze-Gao(王泽高), Chen Yuan-Fu(陈远富), Chen Cao(陈超), Tian Ben-Lang(田本朗), Chu Fu-Tong(褚夫同), Liu Xing-Zhao(刘兴钊), and Li Yan-Rong(李言荣) |
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Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric |
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Chin. Phys. B
2010 Vol.19 (10): 107305-107305
[Abstract]
(1361)
[HTML 1 KB]
[PDF 484 KB]
(1556)
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107206 |
Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Fan Guang-Han(范广涵), Zhang Yong(章勇), Zheng Shu-Wen(郑树文), and Su Jun(苏军) |
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GaP layers grown on GaN with and without buffer layers |
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Chin. Phys. B
2010 Vol.19 (10): 107206-107206
[Abstract]
(1518)
[HTML 1 KB]
[PDF 1570 KB]
(1502)
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107204 |
Xu Sheng-Rui(许晟瑞), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Zhou Xiao-Wei(周小伟), Cao Yan-Rong(曹艳荣), Ou Xin-Xiu(欧新秀), Mao Wei(毛维), Du Da-Chao(杜大超), and Wang Hao(王昊) |
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The etching of a-plane GaN epilayers grown by metal–organic chemical vapour deposition |
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Chin. Phys. B
2010 Vol.19 (10): 107204-107204
[Abstract]
(1475)
[HTML 1 KB]
[PDF 1087 KB]
(1254)
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106802 |
Guo Xi(郭希), Wang Hui(王辉), Jiang De-Sheng(江德生), Wang Yu-Tian(王玉田), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Zhang Shu-Ming(张书明), and Yang Hui(杨辉) |
| |
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Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques |
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Chin. Phys. B
2010 Vol.19 (10): 106802-106802
[Abstract]
(1745)
[HTML 1 KB]
[PDF 1501 KB]
(2918)
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103304 |
Wang Chuan-Kui(王传奎), Zhang Zhen(张珍), Ding Ming-Cui(丁明翠), Li Xiao-Jing(李小静), Sun Yuan-Hong(孙元红), and Zhao Ke(赵珂) |
| |
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Two-photon absorption properties of aggregation systems on the basis of (E)-4-(2-nitrovinyl) benzenamine molecules |
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Chin. Phys. B
2010 Vol.19 (10): 103304-103304
[Abstract]
(1491)
[HTML 1 KB]
[PDF 802 KB]
(794)
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18103 |
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才),Li Jing(李婧), Sun Qin-Jun(孙钦军),Wang Yun(王赟), and Xu Xu-Rong(徐叙瑢) |
| |
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Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors |
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Chin. Phys. B
2010 Vol.19 (1): 18103-018103
[Abstract]
(1419)
[HTML 0 KB]
[PDF 5000 KB]
(897)
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18101 |
Zhao Lu-Bing(赵璐冰), Yu Tong-Jun(于彤军), Wu Jie-Jun(吴洁君), Yang Zhi-Jian(杨志坚), and Zhang Guo-Yi(张国义) |
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Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films |
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Chin. Phys. B
2010 Vol.19 (1): 18101-018101
[Abstract]
(1081)
[HTML 1 KB]
[PDF 6968 KB]
(556)
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17307 |
Wang Liang-Ji(王良吉), Zhang Shu-Ming(张书明), Zhu Ji-Hong(朱继红), Zhu Jian-Jun(朱建军), Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), Wang Yu-Tian(王玉田) , and Yang Hui(杨辉) |
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Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices |
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Chin. Phys. B
2010 Vol.19 (1): 17307-017307
[Abstract]
(1483)
[HTML 1 KB]
[PDF 689 KB]
(1196)
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17306 |
Ren Fan(任凡), Hao Zhi-Biao(郝智彪), Wang Lei(王磊), Wang Lai(汪莱), Li Hong-Tao (李洪涛), and Luo Yi(罗毅) |
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Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2010 Vol.19 (1): 17306-017306
[Abstract]
(1369)
[HTML 1 KB]
[PDF 694 KB]
(1435)
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4007 |
Yildiz A, Öztürk M Kemal, Bosi M, Özçelik S, and Kasap M |
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Structural, electrical and optical characterization of InGaN layers grown by MOVPE |
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Chin. Phys. B
2009 Vol.18 (9): 4007-4012
[Abstract]
(1647)
[HTML 1 KB]
[PDF 217 KB]
(952)
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3990 |
Yuan Guang-Cai(袁广才), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Xu Na(许娜), Tian Xue-Yan(田雪雁), and Xu Xu-Rong(徐叙瑢) |
| |
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Study on characteristics of a double-conductible channel organic thin-films transistor with an ultra-thin hole-blocking layer |
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Chin. Phys. B
2009 Vol.18 (9): 3990-3994
[Abstract]
(1555)
[HTML 1 KB]
[PDF 406 KB]
(706)
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3980 |
Zhao Jian-Zhi(赵建芝), Lin Zhao-Jun(林兆军), Timothy D Corrigan, Zhang Yu(张宇), Lü Yuan-Jie(吕元杰), Lu Wu(鲁武), Wang Zhan-Guo(王占国), and Chen Hong(陈弘) |
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Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures |
| |
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Chin. Phys. B
2009 Vol.18 (9): 3980-3984
[Abstract]
(2027)
[HTML 1 KB]
[PDF 179 KB]
(1890)
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3905 |
Cen Long-Bin(岑龙斌), Shen Bo(沈波), Qin Zhi-Xin(秦志新), and Zhang Guo-Yi(张国义) |
| |
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Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells |
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Chin. Phys. B
2009 Vol.18 (9): 3905-3908
[Abstract]
(1455)
[HTML 1 KB]
[PDF 260 KB]
(721)
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3783 |
Shen Yi(沈毅), Pei Wen-Jiang(裴文江), Wang Kai(王开), and Wang Shao-Ping(王少平) |
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A self-organizing shortest path finding strategy on complex networks |
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Chin. Phys. B
2009 Vol.18 (9): 3783-3789
[Abstract]
(1697)
[HTML 1 KB]
[PDF 514 KB]
(1155)
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3530 |
Liu Ge(刘舸), Liu Ming(刘明), Wang Hong(王宏), Shang Li-Wei(商立伟), Ji Zhuo-Yu(姬濯宇), Liu Xing-Hua(刘兴华), and Liu Jiang(柳江) |
| |
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Study of top and bottom contact resistance in one organic field-effect transistor |
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Chin. Phys. B
2009 Vol.18 (8): 3530-3534
[Abstract]
(1608)
[HTML 1 KB]
[PDF 1752 KB]
(1025)
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3014 |
Feng Qian(冯倩), Tian Yuan(田园), Bi Zhi-Wei(毕志伟), Yue Yuan-Zheng(岳远征), Ni Jin-Yu(倪金玉), Zhang Jin-Cheng(张进成), Hao Yue(郝跃), and Yang Lin-An(杨林安) |
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The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment |
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Chin. Phys. B
2009 Vol.18 (7): 3014-3017
[Abstract]
(1511)
[HTML 1 KB]
[PDF 714 KB]
(986)
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3002 |
Li Jian-Feng(李建丰), Chang Wen-Li(常文利), Ou Gu-Ping(欧谷平), and Zhang Fu-Jia(张福甲) |
| |
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Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide |
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Chin. Phys. B
2009 Vol.18 (7): 3002-3007
[Abstract]
(1379)
[HTML 1 KB]
[PDF 1577 KB]
(862)
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2998 |
Zhang Jin-Cheng(张进成), Zheng Peng-Tian(郑鹏天), Zhang Juan(张娟), Xu Zhi-Hao(许志豪), and Hao Yue(郝跃) |
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Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures |
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Chin. Phys. B
2009 Vol.18 (7): 2998-3001
[Abstract]
(1421)
[HTML 1 KB]
[PDF 1804 KB]
(895)
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2912 |
Fan Long(范隆), Hao Yue(郝跃), Zhao Yuan-Fu(赵元富), Zhang Jin-Cheng(张进城), Gao Zhi-Yuan(高志远), and Li Pei-Xian(李培咸) |
| |
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Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs) |
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Chin. Phys. B
2009 Vol.18 (7): 2912-2919
[Abstract]
(1432)
[HTML 1 KB]
[PDF 275 KB]
(830)
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2603 |
Tao Ren-Chun(陶仁春), Yu Tong-Jun(于彤军), Jia Chuan-Yu(贾传宇), Chen Zhi-Zhong(陈志忠), Qin Zhi-Xin (秦志新), and Zhang Guo-Yi(张国义) |
| |
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Strain effects on the polarized optical properties of InGaN with different In compositions |
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Chin. Phys. B
2009 Vol.18 (6): 2603-2609
[Abstract]
(1601)
[HTML 1 KB]
[PDF 370 KB]
(689)
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2096 |
You Hai-Long(游海龙) and Zhang Chun-Fu(张春福) |
| |
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Effects of optical interference and annealing on the performances of poly (3-hexylthiophene): fullerene based solar cells |
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Chin. Phys. B
2009 Vol.18 (5): 2096-2100
[Abstract]
(1480)
[HTML 1 KB]
[PDF 162 KB]
(1183)
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1627 |
Hu Yue(胡玥) and Rao Hai-Bo(饶海波) |
| |
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Numerical model of multilayer organic light-emitting devices |
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Chin. Phys. B
2009 Vol.18 (4): 1627-1630
[Abstract]
(1603)
[HTML 1 KB]
[PDF 277 KB]
(1932)
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1601 |
Gu Wen-Ping(谷文萍), Duan Huan-Tao(段焕涛), Ni Jin-Yu(倪金玉), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), and Ma Xiao-Hua(马晓华) |
| |
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High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2009 Vol.18 (4): 1601-1608
[Abstract]
(1638)
[HTML 1 KB]
[PDF 1865 KB]
(1038)
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881 |
Liu Yu-Min(刘玉敏), Yu Zhong-Yuan(俞重远), and Ren Xiao-Min(任晓敏) |
| |
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The strain relaxation of InAs/GaAs self-organized quantum dot |
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Chin. Phys. B
2009 Vol.18 (3): 881-887
[Abstract]
(1312)
[HTML 1 KB]
[PDF 1298 KB]
(986)
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5457 |
Xu Zhi-Hao(许志豪), Zhang Jin-Cheng(张进成), Zhang Zhong-Fen(张忠芬), Zhu Qing-Wei(朱庆玮), Duan Huan-Tao(段焕涛), and Hao Yue(郝跃) |
| |
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The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures |
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Chin. Phys. B
2009 Vol.18 (12): 5457-5461
[Abstract]
(1643)
[HTML 1 KB]
[PDF 1716 KB]
(895)
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5451 |
Chen Jun-Feng(陈军峰) and Hao Yue(郝跃) |
| |
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A theoretical study of harmonic generation in a short period AlGaN/GaN superlattice induced by a terahertz field |
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Chin. Phys. B
2009 Vol.18 (12): 5451-5456
[Abstract]
(1506)
[HTML 1 KB]
[PDF 1460 KB]
(725)
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5350 |
Zhang Li-Qun(张立群),Zhang Shu-Ming(张书明),Jiang De-Sheng(江德生), Wang Hui(王辉),Zhu Jian-Jun(朱建军),Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺), and Yang Hui(杨辉) |
| |
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GaN-based violet laser diodes grown on free-standing GaN substrate |
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Chin. Phys. B
2009 Vol.18 (12): 5350-5353
[Abstract]
(1698)
[HTML 1 KB]
[PDF 760 KB]
(708)
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4970 |
Gao Zhi-Yuan(高志远),Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Li Pei-Xian(李培咸), and Gu Wen-Ping(谷文萍) |
| |
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Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure |
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Chin. Phys. B
2009 Vol.18 (11): 4970-4975
[Abstract]
(1632)
[HTML 1 KB]
[PDF 661 KB]
(881)
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4449 |
Zhang Min(张敏) and Ban Shi-Liang(班士良) |
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Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction |
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Chin. Phys. B
2009 Vol.18 (10): 4449-4455
[Abstract]
(1739)
[HTML 1 KB]
[PDF 248 KB]
(982)
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4413 |
Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), Zhang Shu-Ming(张书明), Wang Yu-Tian(王玉田), Wang Hui (王辉), Chen Gui-Feng(陈贵锋), and Yang Hui(杨辉) |
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The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates |
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Chin. Phys. B
2009 Vol.18 (10): 4413-4417
[Abstract]
(1610)
[HTML 1 KB]
[PDF 2560 KB]
(1235)
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349 |
You Hai-Long(游海龙) and Zhang Chun-Fu(张春福) |
| |
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Influence of optical interference and carrier lifetime on the short circuit current density of organic bulk heterojunction solar cells |
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Chin. Phys. B
2009 Vol.18 (1): 349-356
[Abstract]
(900)
[HTML 1 KB]
[PDF 1202 KB]
(944)
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320 |
Yan Jun-Feng(闫军锋), Wang Tao(汪韬), Wang Jing-Wei (王警卫), Zhang Zhi-Yong(张志勇), and Zhao Wu(赵武) |
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Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition |
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Chin. Phys. B
2009 Vol.18 (1): 320-323
[Abstract]
(1161)
[HTML 1 KB]
[PDF 2342 KB]
(1316)
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3363 |
Chen Wei-Hua(陈伟华), Hu Xiao-Dong(胡晓东)$^†$, Dai Tao(代涛), Li Rui(李睿), Ye Xue-Min(叶学敏), Zhao Tai-Ping(赵太平), Du Wei-Min(杜为民), Yang Zhi-Jian(杨志坚), and Zhang Guo-Yi(张国义) |
| |
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Influence of patterned TiO2/SiO2 dielectric multilayers for back and front mirror facetson GaN-based laser diodes |
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Chin. Phys. B
2008 Vol.17 (9): 3363-3366
[Abstract]
(1282)
[HTML 1 KB]
[PDF 1927 KB]
(875)
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2725 |
Cao Jun-Song(曹峻松), Guan Min(关敏), Cao Guo-Hua(曹国华), Zeng Yi-Ping(曾一平), Li Jin-Min(李晋闽), and Qin Da-Shan(秦大山) |
| |
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The performance enhancement in organic light-emitting diode using a semicrystalline composite for hole injection |
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Chin. Phys. B
2008 Vol.17 (7): 2725-2729
[Abstract]
(1443)
[HTML 1 KB]
[PDF 725 KB]
(602)
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2721 |
Zhao Jian-Jun(赵建军), Xing Ru(邢茹), Lu Yi(鲁毅), Haosibayar(浩斯巴雅尔), Zhao Ming-Yu(赵明宇), Jin Xiang(金香), Zheng Lin(郑琳), Ning Wei(宁伟), Sun Young(孙阳), and Cheng Zhao-Hua(成昭华) |
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Electron spin resonance study of the Ba-doping manganite Nd0.5Sr0.5MnO3 |
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Chin. Phys. B
2008 Vol.17 (7): 2721-2724
[Abstract]
(1606)
[HTML 1 KB]
[PDF 457 KB]
(494)
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2717 |
Zhao Jian-Jun(赵建军), Lu Yi(鲁毅), Haosibayar(浩斯巴雅尔), Xing Ru(邢茹), Yang Ren-Fu(杨仁福), Li Qing-An(李庆安), Sun Young(孙阳), and Cheng Zhao-Hua(成昭华) |
| |
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Spontaneous magnetization and resistivity jumps in bilayered manganite (La0.8Eu0.2)4/3Sr5/3Mn2O7 single crystals |
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Chin. Phys. B
2008 Vol.17 (7): 2717-2720
[Abstract]
(1383)
[HTML 1 KB]
[PDF 181 KB]
(483)
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2696 |
Yang Ling(杨凌), Ma Xiao-Hua(马晓华), Feng Qian(冯倩), and Hao Yue(郝跃) |
| |
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Reliability analysis of GaN-based light emitting diodes for solid state illumination |
| |
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Chin. Phys. B
2008 Vol.17 (7): 2696-2700
[Abstract]
(1480)
[HTML 1 KB]
[PDF 3423 KB]
(884)
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2689 |
Zhang Jin-Feng(张金风), Mao Wei(毛维), Zhang Jin-Cheng(张进城), and Hao Yue(郝跃) |
| |
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The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures |
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Chin. Phys. B
2008 Vol.17 (7): 2689-2695
[Abstract]
(1656)
[HTML 0 KB]
[PDF 743 KB]
(1263)
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2272 |
Xie Yan-Wu(谢燕武), Shen Bao-Gen (沈保根), and Sun Ji-Rong(孙继荣) |
| |
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Effect of thermal-annealing on the magnetoresistance of manganite-based junctions |
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Chin. Phys. B
2008 Vol.17 (6): 2272-2276
[Abstract]
(1917)
[HTML 1 KB]
[PDF 873 KB]
(546)
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2251 |
Long Yun-Ze(龙云泽), Chen Zhao-Jia(陈兆甲), Peng Hai-Lin(彭海琳), and Liu Zhong-Fan(刘忠范) |
| |
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Anisotropic electrical conductivity,phase transition and thermal hysteresis of a charge-transfer salt dibutylammonium bis-7,7,8,8-tetracyanoquinodimethane DBA(TCNQ)2 |
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Chin. Phys. B
2008 Vol.17 (6): 2251-2256
[Abstract]
(1530)
[HTML 1 KB]
[PDF 1423 KB]
(742)
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2245 |
Xu Hong-Yan(徐宏妍), Jian Ao-Qun(菅傲群), Xue Chen-Yang(薛晨阳), Chen Yang(陈阳), Zhang Bin-Zhen(张斌珍), Zhang Wen-Dong(张文栋), Zhang Zhi-Guo(张志国), and Feng Zhen(冯震) |
| |
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Temperature dependence of biaxial strain and its influence on phonon and band gap of GaN thin film |
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Chin. Phys. B
2008 Vol.17 (6): 2245-2250
[Abstract]
(1413)
[HTML 1 KB]
[PDF 223 KB]
(792)
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1911 |
Cao Guo-Hua(曹国华), Qin Da-Shan(秦大山), Guan Min(关敏), Cao Jun-Song(曹峻松), Zeng Yi-Ping(曾一平), and Li Jin-Min(李晋闽) |
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Organic light emitting diodes using magnesium doped organic acceptor as electron injection layer and silver as cathode |
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Chin. Phys. B
2008 Vol.17 (5): 1911-1915
[Abstract]
(1307)
[HTML 0 KB]
[PDF 478 KB]
(806)
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1405 |
Yue Yuan-Zheng(岳远征), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), Ni Jin-Yu(倪金玉), and Ma Xiao-Hua(马晓华) |
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A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress |
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Chin. Phys. B
2008 Vol.17 (4): 1405-1409
[Abstract]
(1633)
[HTML 1 KB]
[PDF 291 KB]
(887)
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1274 |
Jin Xiao-Ming(靳晓民), Zhang Bei(章蓓), Dai Tao(代涛), and Zhang Guo-Yi(张国义) |
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Effects of transverse mode coupling and optical confinement factor on gallium-nitride based laser diode |
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Chin. Phys. B
2008 Vol.17 (4): 1274-1279
[Abstract]
(1461)
[HTML 1 KB]
[PDF 183 KB]
(554)
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4648 |
Xu Da-Qing (徐大庆), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Li Pei-Xian (李培咸), Wang Chao (王超), Lü Hong-Liang (吕红亮), Tang Xiao-Yan (汤晓燕), Wang Yue-Hu (王悦湖) |
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Study of (Ga, Mn)N prepared by Mn-Ion implantation using optical techniques |
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Chin. Phys. B
2008 Vol.17 (12): 4648-4651
[Abstract]
(1224)
[HTML 1 KB]
[PDF 521 KB]
(652)
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4300 |
Liang Song (梁 松), Zhu Hong-Liang (朱洪亮), Pan Jiao-Qing (潘教青), Zhao Ling-Juan (赵玲娟), Wang Lu-Feng (王鲁峰), Zhou Fan (周 帆), Shu Hui-Yun (舒惠云), Bian Jing (边 静), An Xin (安 欣), Wang Wei (王 圩) |
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Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition |
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Chin. Phys. B
2008 Vol.17 (11): 4300-4304
[Abstract]
(1315)
[HTML 0 KB]
[PDF 457 KB]
(578)
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4211 |
Liu Ji-Cai (刘纪彩), Wang Chun-Xin (王春兴), Gel'mukhanov Faris, Wang Chuan-Kui (王传奎) |
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Dynamics of cooperative emissions in a cascade three-level molecular system driven by an ultrashort laser pulse |
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Chin. Phys. B
2008 Vol.17 (11): 4211-4217
[Abstract]
(1184)
[HTML 1 KB]
[PDF 223 KB]
(563)
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290 |
Guo Bao-Zeng(郭宝增), Gong Na(宫娜), and Yu Fu-Qiang(于富强) |
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Calculations of two dimensional electron gas distributions in AlGaN/GaN material system |
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Chin. Phys. B
2008 Vol.17 (1): 290-295
[Abstract]
(1782)
[HTML 1 KB]
[PDF 181 KB]
(1797)
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2120 |
Zhou Jian-Jun(周建军), Wen Bo(文博), Jiang Ruo-Lian(江若琏), Liu Cheng-Xiang(刘成祥), Ji Xiao-Li(姬小利), Xie Zi-Li(谢自力), Chen Dun-Jun(陈敦军), Han Ping(韩平), Zhang Rong(张荣), and Zheng You-Dou(郑有炓) |
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Photoresponse of the In0.3Ga0.7 N metal--insulator--semiconductor photodetectors |
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Chin. Phys. B
2007 Vol.16 (7): 2120-2122
[Abstract]
(1292)
[HTML 1 KB]
[PDF 184 KB]
(628)
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2082 |
Qiu Kai(邱凯),Zhong Fei(钟飞), Li Xin-Hua(李新化), Yin Zhi-Jun(尹志军), Ji Chang-Jian(姬长建), Han Qi-Feng(韩奇峰), Chen Jia-Rong(陈家荣), Cao Xian-Cun(曹先存), and Wang Yu-Qi(王玉琦) |
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Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy |
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Chin. Phys. B
2007 Vol.16 (7): 2082-2086
[Abstract]
(1414)
[HTML 0 KB]
[PDF 461 KB]
(578)
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1467 |
Liu Zhe(刘喆), Wang Xiao-Liang(王晓亮), Wang Jun-Xi(王军喜), Hu Guo-Xin(胡国新), Guo Lun-Chun(郭伦春), and Li Jin-Min(李晋闽) |
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The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates |
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Chin. Phys. B
2007 Vol.16 (5): 1467-1471
[Abstract]
(1309)
[HTML 0 KB]
[PDF 947 KB]
(1233)
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1405 |
Xue Shou-Bin(薛守斌), Zhuang Hui-Zhao(庄惠照), Xue Cheng-Shan(薛成山), Hu Li-Jun(胡丽君), Li Bao-Li(李保理), and Zhang Shi-Ying(张士英) |
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Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films |
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Chin. Phys. B
2007 Vol.16 (5): 1405-1409
[Abstract]
(1221)
[HTML 0 KB]
[PDF 689 KB]
(587)
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1135 |
Zhang Jian-Ming(张剑铭), Zou De-Shu(邹德恕), Xu Chen(徐晨), Zhu Yan-Xu(朱彦旭), Liang Ting(梁庭), Da Xiao-Li(达小丽), and Shen Guang-Di(沈光地) |
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High power and high reliability GaN/InGaN flip-chip light-emitting diodes |
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Chin. Phys. B
2007 Vol.16 (4): 1135-1139
[Abstract]
(1501)
[HTML 1 KB]
[PDF 336 KB]
(1390)
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840 |
Zhao Kun(赵昆), He Meng(何萌), and LüHui-Bin(吕惠宾) |
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Reversal transient laser-induced voltages in La2/3Ca1/3MnO3 films |
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Chin. Phys. B
2007 Vol.16 (3): 840-842
[Abstract]
(1523)
[HTML 1 KB]
[PDF 448 KB]
(622)
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730 |
Nie Hai(聂海), Zhang Bo(张波), and Tang Xian-Zhong(唐先忠) |
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Significant improvement of OLED efficiency and stability by doping both HTL and ETL with different dopant in heterojunction of polymer/small-molecules |
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Chin. Phys. B
2007 Vol.16 (3): 730-734
[Abstract]
(1781)
[HTML 1 KB]
[PDF 158 KB]
(2550)
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287 |
Chen Fei(陈飞), Chen Zeng-Qiang(陈增强), and Yuan Zhu-Zhi(袁著祉) |
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A realistic model for complex networks with local interaction,self-organization and order |
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Chin. Phys. B
2007 Vol.16 (2): 287-291
[Abstract]
(1749)
[HTML 1 KB]
[PDF 333 KB]
(575)
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3772 |
Tan Li-Na(谭丽娜), Hu Cui-E(胡翠娥), Yu Bai-Ru(于白茹), and Chen Xiang-Rong(陈向荣) |
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First-principles calculations of structure and high pressure phase transition in gallium nitride |
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Chin. Phys. B
2007 Vol.16 (12): 3772-3776
[Abstract]
(1299)
[HTML 1 KB]
[PDF 420 KB]
(569)
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3494 |
Cheng Zhi-Qun(程知群), Cai Yong(蔡勇), Liu Jie(刘杰), Zhou Yu-Gang(周玉刚), Lau Kei May, and Chen J. Kevin |
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MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN HEMTs |
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Chin. Phys. B
2007 Vol.16 (11): 3494-3497
[Abstract]
(1537)
[HTML 1 KB]
[PDF 519 KB]
(860)
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3120 |
Xie Yan-Wu(谢燕武), Wang Deng-Jing (王登京), Shen Bao-Gen(沈保根), and Sun Ji-Rong(孙继荣) |
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Rotation of ferromagnetic clusters induced magnetoresistance in the junction composed of La0.9Ca0.1MnO3+$\delta$ and 1 wt.% Nb-doped SrTiO3 |
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Chin. Phys. B
2007 Vol.16 (10): 3120-3124
[Abstract]
(1265)
[HTML 1 KB]
[PDF 806 KB]
(431)
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2993 |
Jia Xiu-Jie(贾秀杰), Liu Feng-Nian(刘丰年), Fu Sheng-Gui(付圣贵), Liu Yan-Ge(刘艳格), Yuan Shu-Zhong(袁树忠), and Dong Xiao-Yi(董孝义) |
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Realization of an efficient coherent combination via Michelson cavity |
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Chin. Phys. B
2007 Vol.16 (10): 2993-2997
[Abstract]
(1249)
[HTML 1 KB]
[PDF 604 KB]
(544)
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258 |
Qu Zhe(屈哲), Pi Li(皮雳), Fan Ji-Yu(樊济宇), Tan Shun(谭舜), Zhang Bei (张贝), Zhang Meng(张锰), and Zhang Yu-Heng (张裕恒) |
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Electric and magnetic behaviour in double doped La$_{2/3+4x/3}$Sr$_{1/3-4x/3}$Mn$_{1-x}$Mg$_{x}$O$_{3}$ |
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Chin. Phys. B
2007 Vol.16 (1): 258-265
[Abstract]
(1445)
[HTML 1 KB]
[PDF 485 KB]
(549)
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2030 |
Lu Yi-Gang(卢义刚) and Dong Yan-Wu(董彦武) |
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Ultrasonic study on organic liquid and binary organic liquid mixtures by using Schaaffs' collision factor theory |
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Chin. Phys. B
2006 Vol.15 (9): 2030-2035
[Abstract]
(1301)
[HTML 1 KB]
[PDF 114 KB]
(802)
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1471 |
Chen Rui-Xiong (陈瑞熊), Bai Ke-Zhao (白克钊), Liu Mu-Ren (刘慕仁) |
| |
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The CA model for traffic-flow at the grade roundabout crossing |
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Chin. Phys. B
2006 Vol.15 (7): 1471-1476
[Abstract]
(1734)
[HTML 0 KB]
[PDF 154 KB]
(1032)
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1325 |
He Zheng (何政), Kang Yong (亢勇), Tang Ying-Wen (汤英文), Li Xue (李雪), Fang Jia-Xiong (方家熊) |
| |
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Study on the spectral response of the Schottky photodetector of GaN |
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Chin. Phys. B
2006 Vol.15 (6): 1325-1329
[Abstract]
(1633)
[HTML 1 KB]
[PDF 232 KB]
(672)
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1060 |
Zhang Jin-Feng (张金风), Wang Chong (王冲), Zhang Jin-Cheng (张进城), Hao Yue (郝 跃) |
| |
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Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures |
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Chin. Phys. B
2006 Vol.15 (5): 1060-1066
[Abstract]
(1816)
[HTML 1 KB]
[PDF 357 KB]
(987)
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702 |
Li Yan (李岩), Zheng Rui-Sheng (郑瑞生), Feng Yu-Chun (冯玉春), Liu Song-Hao (刘颂豪), Niu Han-Ben (牛憨笨) |
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Effects of the microstructure slab with pillars on light extraction of GaN light-emitting diode |
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Chin. Phys. B
2006 Vol.15 (4): 702-707
[Abstract]
(1574)
[HTML 1 KB]
[PDF 720 KB]
(673)
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636 |
Chang Yuan-Cheng (常远程), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
| |
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Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures |
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Chin. Phys. B
2006 Vol.15 (3): 636-640
[Abstract]
(1742)
[HTML 0 KB]
[PDF 261 KB]
(588)
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2706 |
Zou Jun(邹军), Liu Cheng-Xiang(刘成祥), Zhou Sheng-Ming(周圣明), Wang Jun(王军), Zhou Jian-Hua(周建华), Huang Tao-Hua(黄涛华), Han Ping(韩平), Xie Zi-Li(谢自力), and Zhang Rong(张荣) |
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Growth studies of m-GaN layers on LiAlO2 by MOCVD |
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Chin. Phys. B
2006 Vol.15 (11): 2706-2709
[Abstract]
(1514)
[HTML 1 KB]
[PDF 495 KB]
(708)
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2618 |
Sun Xiang-Bing(孙香冰), Ren Quan(任诠), Wang Xin-Qiang(王新强), Zhang Guang-Hui(张光辉), Yang Hong-Liang(杨洪亮), Feng Lin(冯林), Xu Dong(许东), and Liu Zhi-Bo(刘智波) |
| |
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Nonlinear optical properties of [(CH3)4N]Au(dmit)2 using Z-scan technique |
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Chin. Phys. B
2006 Vol.15 (11): 2618-2622
[Abstract]
(1478)
[HTML 1 KB]
[PDF 162 KB]
(625)
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2402 |
Zhang Jin-Feng(张金风) and Hao Yue(郝跃) |
| |
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GaN-based heterostructures: electric--static equilibrium and boundary conditions |
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Chin. Phys. B
2006 Vol.15 (10): 2402-2406
[Abstract]
(1462)
[HTML 1 KB]
[PDF 115 KB]
(718)
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1896 |
Kou Zhi-Qi (寇志起), Ma Xiao (马骁), Di Nai-Li (邸乃力), Li Qing-An (李庆安), Cheng Zhao-Hua (成昭华) |
| |
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Floating zone growth and magnetic and specific heat properties of La0.67Ca0.33Mn1-xFexO3 (x=0.00, 0.04) single crystals |
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Chin. Phys. B
2005 Vol.14 (9): 1896-1899
[Abstract]
(1161)
[HTML 1 KB]
[PDF 783 KB]
(369)
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1879 |
Feng Jia-Feng (丰家峰), Zhao Kun (赵昆), Huang Yan-Hong (黄延红), Zhao Jian-Gao (赵见高), Han Xiu-Feng (韩秀峰), Zhan Wen-Shan (詹文山), Wong Hong-Kuen (黄康权) |
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Magnetotransport properties of La0.67Ca0.33MnO3/La0.67Sr0.33MnO3 bilayers |
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Chin. Phys. B
2005 Vol.14 (9): 1879-1881
[Abstract]
(1325)
[HTML 1 KB]
[PDF 228 KB]
(577)
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1653 |
Kou Zhi-Qi (寇志起), Di Nai-Li (邸乃力), Ma Xiao (马骁), Li Qing-An (李庆安), Cheng Zhao-Hua (成昭华) |
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Enhancement of “intrinsic” magnetoresistance ratio and activation energy of La0.67Ca0.33MnO3 single crystals by Fe doping |
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Chin. Phys. B
2005 Vol.14 (8): 1653-1656
[Abstract]
(1327)
[HTML 1 KB]
[PDF 252 KB]
(522)
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830 |
Li Zhong-Hui (李忠辉), Yu Tong-Jun (于彤军), Yang Zhi-Jian (杨志坚), Feng Yu-Chun (冯玉春), Zhang Guo-Yi (张国义), Guo Bao-Ping (郭宝平), Niu Han-Ben (牛憨笨) |
| |
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Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN |
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Chin. Phys. B
2005 Vol.14 (4): 830-833
[Abstract]
(1157)
[HTML 1 KB]
[PDF 1454 KB]
(702)
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821 |
Guo Ji-Yong (郭继勇), Chen Yu-Guang (陈宇光), Chen Hong (陈鸿) |
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Critical behaviour of coupled organic ferromagnet chains |
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Chin. Phys. B
2005 Vol.14 (4): 821-825
[Abstract]
(1022)
[HTML 1 KB]
[PDF 233 KB]
(546)
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610 |
Ma Jian-Hua (马建华), Meng Xiang-Jian (孟祥建), Sun Jing-Lan (孙璟兰), Lin Tie (林铁), Shi Fu-Wen (石富文), Chu Jun-Hao (褚君浩) |
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Optical properties of SrTiO3 thin films prepared by metalorganic decomposition |
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Chin. Phys. B
2005 Vol.14 (3): 610-614
[Abstract]
(1149)
[HTML 1 KB]
[PDF 255 KB]
(501)
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604 |
Xiong Chang-Min (熊昌民), Sun Ji-Rong (孙继荣), Wang Deng-Jing (王登京), Liu Guan-Juan (刘光娟), Zhang Hong-Wei (张宏伟), Shen Bao-Gen (沈保根) |
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Dependence of the coercivity of La0.67Ca0.33MnO3 films on substrate and thickness |
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Chin. Phys. B
2005 Vol.14 (3): 604-609
[Abstract]
(1110)
[HTML 1 KB]
[PDF 875 KB]
(772)
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420 |
Zhao Kun (赵昆), Huang Yan-Hong (黄延红), Lü Hui-Bin (吕惠宾), He Meng (何萌), Jin Kui-Juan (金奎娟), Chen Zheng-Hao (陈正豪), Zhou Yue-Liang (周岳亮), Cheng Bo-Lin (程波林), Dai Shou-Yu (戴守愚), Yang Guo-Zhen (杨国桢) |
| |
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Pico-second photoelectric characteristic in manganite oxide La0.67Ca0.33MnO3 films |
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Chin. Phys. B
2005 Vol.14 (2): 420-421
[Abstract]
(1192)
[HTML 1 KB]
[PDF 182 KB]
(458)
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2293 |
Hu Yi-Fan (胡一帆), Beling C. D. |
| |
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Rectifying barrier at GaN/SiC hetero-junction studied with positron annihilation spectroscopy |
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Chin. Phys. B
2005 Vol.14 (11): 2293-2229
[Abstract]
(1170)
[HTML 0 KB]
[PDF 321 KB]
(622)
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2141 |
Zhang Chun-Guang (张春光), Bian Liu-Fang (卞留芳), Chen Wei-De (陈维德) |
| |
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Photoluminescence study on Eu-implanted GaN |
| |
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Chin. Phys. B
2005 Vol.14 (10): 2141-2144
[Abstract]
(974)
[HTML 0 KB]
[PDF 215 KB]
(512)
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2133 |
Feng Qian (冯倩), Gong Xin (龚欣), Zhang Xiao-Ju (张晓菊), Hao Yue (郝跃) |
| |
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Photoluminescence characteristics of GaN:Si |
| |
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Chin. Phys. B
2005 Vol.14 (10): 2133-2136
[Abstract]
(1232)
[HTML 1 KB]
[PDF 210 KB]
(539)
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1334 |
Zhang Jin-Feng (张金凤), Zhang Jin-Cheng (张进城), Hao Yue (郝跃) |
| |
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Temperature dependence of Hall electron density of GaN-based heterostructures |
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Chin. Phys. B
2004 Vol.13 (8): 1334-1338
[Abstract]
(1214)
[HTML 1 KB]
[PDF 201 KB]
(488)
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783 |
Zhang Fu-Chang (张福昌), Chen Wei-Ran (陈卫然), Gong Wei-Zhi (龚伟志), Xu Bo (许波), Qiu Xiang-Gang (邱祥冈), Zhao Bai-Ru (赵柏儒) |
| |
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Spin-glass-like behaviour and positive magnetoresistance in oxygen deficient La2/3Ca1/3MnO3-$\delta$ thin films |
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Chin. Phys. B
2004 Vol.13 (5): 783-788
[Abstract]
(1253)
[HTML 1 KB]
[PDF 656 KB]
(509)
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542 |
Yao Jin-Lei (姚金雷), Wang Ru-Wu (汪汝武), Yang De-Ren (杨德仁), Yan Mi (严密), Zhang Li-Gang (张立刚) |
| |
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Giant magnetoresistance in Y0.9La0.1Mn6Sn6 compound |
| |
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Chin. Phys. B
2004 Vol.13 (4): 542-545
[Abstract]
(1063)
[HTML 1 KB]
[PDF 186 KB]
(392)
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489 |
Song Bin (宋斌), Ling Li (凌俐), Cao Pei-Lin (曹培林) |
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Theoretical study on structures of Ga3N, GaN3, Ga3N2 and Ga2N3 clusters |
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Chin. Phys. B
2004 Vol.13 (4): 489-496
[Abstract]
(1308)
[HTML 1 KB]
[PDF 254 KB]
(538)
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1016 |
Feng Dong-Hai (冯东海), Jia Tian-Qing (贾天卿), Xu Zhi-Zhan (徐至展) |
| |
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Electronic structure and optical properties of zinc-blende GaN quantum dots |
| |
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Chin. Phys. B
2003 Vol.12 (9): 1016-1020
[Abstract]
(1028)
[HTML 1 KB]
[PDF 250 KB]
(517)
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796 |
Peng Ying-Quan (彭应全), Zhang Fu-Jia (张福甲), Song Chang-An (宋长安) |
| |
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Numerical investigations on the current conduction in bilayer organic light-emitting devices with ohmic injection of charge carriers |
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Chin. Phys. B
2003 Vol.12 (7): 796-802
[Abstract]
(1154)
[HTML 0 KB]
[PDF 269 KB]
(560)
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785 |
Zhou Jian-Jun (周建军), Jiang Ruo-Lian (江若琏), Sha Jin (沙金), Liu Jie (刘杰), Shen Bo (沈波), Zhang Rong (张荣), Zheng You-Dou (郑有炓) |
| |
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Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors |
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Chin. Phys. B
2003 Vol.12 (7): 785-788
[Abstract]
(1169)
[HTML 0 KB]
[PDF 182 KB]
(505)
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548 |
Liu De-Sheng (刘德胜), Wang Lu-Xia (王鹿霞), Xie Shi-Jie (解士杰), Han Sheng-Hao (韩圣浩), Mei Liang-Mo (梅良模) |
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Electronic confinement in quasi-one-dimensional triblock copolymers |
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Chin. Phys. B
2003 Vol.12 (5): 548-552
[Abstract]
(1093)
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[PDF 240 KB]
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426 |
Feng Wei (封伟), Xu You-Long (徐友龙), Yi Wen-Hui (易文辉), Zhou Feng (周峰), Wang Xiao-Gong (王晓工), Yoshino Katsumi (吉野勝美) |
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Effect of crystalline microstructure on the photophysical performance of polymer/perylene composite films |
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Chin. Phys. B
2003 Vol.12 (4): 426-432
[Abstract]
(1131)
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[PDF 284 KB]
(498)
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305 |
Wang Shu-Feng (王树峰), Huang Wen-Tao (黄文涛), Liu Chu-Ling (刘春玲), Yang Hong (杨宏), Gong Qi-Huang (龚旗煌), Takashi Kobayashi, Tsuyoshi Takeyama, Masashi Horikiri, Yasuhiro F. Miura |
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Investigation on ultrafast third-order optical nonlinearity of metal(dmit)2/(mnt)2 charge transfer complexes |
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Chin. Phys. B
2003 Vol.12 (3): 305-309
[Abstract]
(1521)
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[PDF 232 KB]
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189 |
Xu Guo-Sheng (徐国盛), Wan Bao-Nian (万宝年), Song Mei (宋梅) |
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Bursty events and incremental diffusion in a local diffusion and multi-scale convection system |
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Chin. Phys. B
2003 Vol.12 (2): 189-197
[Abstract]
(1075)
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[PDF 348 KB]
(411)
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678 |
Huang Ping-Hua (黄乒花), Kong Ling-Jiang (孔令江), Liu Mu-Ren (刘慕仁) |
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A study of a main-road cellular automata traffic flow model |
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Chin. Phys. B
2002 Vol.11 (7): 678-683
[Abstract]
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[HTML 1 KB]
[PDF 241 KB]
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1280 |
Sun Kai (孙锴), Mao Xiao-Ming (毛晓明), Ouyang Qi (欧阳颀) |
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Social influence in small-world networks |
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Chin. Phys. B
2002 Vol.11 (12): 1280-1285
[Abstract]
(1449)
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[PDF 226 KB]
(521)
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1076 |
Peng Ying-Quan (彭应全), Zhang Fu-Jia (张福甲), Tai Xi-Shi (台夕市), He Xi-Yuan (何锡源), Zhang Xu (张旭) |
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Numerical analysis of the mechanism of carrier transport in organic light-emitting devices |
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Chin. Phys. B
2002 Vol.11 (10): 1076-1081
[Abstract]
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[PDF 230 KB]
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751 |
Chen Xin (陈新), Wang Zhi-hong (王志宏), Li Run-wei (李润伟), Shen Bao-gen (沈保根), Zhao Hong-wu (赵宏武), Zhan Wen-shan (詹文山), Chen Jin-song (陈金松), Zhang Xi-xiang (张西祥) |
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CURRENT-DEPENDENT POSITIVE MAGNETORESISTANCE IN Ga-DOPED La0.5Ca0.5MnO3 |
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Chin. Phys. B
2001 Vol.10 (8): 751-755
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[PDF 165 KB]
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395 |
Wu Zhong-liang (吴忠良) |
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EARTHQUAKE SCALING PARADOX |
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Chin. Phys. B
2001 Vol.10 (5): 395-397
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[HTML 0 KB]
[PDF 137 KB]
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218 |
Zhou Wei-ya (周维亚), Li Yu-bao (李玉宝), Liu Zu-qin (刘祖琴), Tang Dong-sheng (唐东升), Zou Xiao-ping (邹小平), Wang Gang (王刚) |
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SELF-ORGANIZED FORMATION OF HEXAGONAL NANOPORE ARRAYS IN ANODIC ALUMINA |
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Chin. Phys. B
2001 Vol.10 (3): 218-222
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[PDF 847 KB]
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84 |
Zhao Xue-ying (赵学应), Wang Hao (王浩), Yan Hao (晏浩), Gai Zheng (盖铮), Zhao Ru-guang (赵汝光), Yang Wei-sheng (杨威生) |
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ADSORPTION BEHAVIOR OF AMINO ACIDS ON COPPER SURFACES |
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Chin. Phys. B
2001 Vol.10 (13): 84-95
[Abstract]
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[PDF 1882 KB]
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179 |
Gao Hong-jun (高鸿钧), Shi Dong-xia (时东霞), Zhang Hao-xu (张昊旭), Lin Xiao (林晓) |
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ULTRAHIGH DATA DENSITY STORAGE WITH SCANNING TUNNELING MICROSCOPY |
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Chin. Phys. B
2001 Vol.10 (13): 179-185
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[PDF 500 KB]
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157 |
Xue Qi-zhen (薛其贞), Xue Qi-kun (薛其坤), S. Kuwano, K. Nakayama, T. Sakurai |
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GROWTH MODE AND SURFACE RECONSTRUCTION OF GaN(000$\bar{1}$) THIN FILMS ON 6H-SiC(000$\bar{1}$) |
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Chin. Phys. B
2001 Vol.10 (13): 157-162
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[PDF 662 KB]
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641 |
Yuan Jian (袁坚), Ren Yong (任勇), Shan Xiu-ming (山秀明) |
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SELF-ORGANIZED CRITICALITY IN ONE-DIMENSIONAL PACKET FLOW MODEL |
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Chin. Phys. B
2000 Vol.9 (9): 641-648
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[PDF 241 KB]
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