Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique

doi:10.1088/1674-1056/21/7/077304

Abstract Self-heating in multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of AlGaN/GaN HEMT is estimated from the calibration curve of passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ℃ is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.

Keywords: AlGaN/GaN high electron mobility transistors Raman spectroscopy temperature

Received: 03 November 2011
Revised: 02 December 2011
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	85.30.Tv	(Field effect devices)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006).

Corresponding Authors: Yang Li-Yuan
E-mail: gezhistudent@163.com

Cite this article:

Yang Li-Yuan(杨丽媛), Xue Xiao-Yong(薛晓咏), Zhang Kai(张凯) Zheng Xue-Feng(郑雪峰), Ma Xiao-Hua(马晓华), and Hao Yue(郝跃) Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique 2012 Chin. Phys. B 21 077304

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Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique

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