1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; 2 China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China; 3 Institute of Microelectronics, Peking University, Beijing 100871, China; 4 School of Information Science and Technology, Northwest University, Xi'an 710127, China
Abstract In this paper, we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor (DH HEMT) with a gate-drain spacing LGD=18.8 μm. Compared with the regular DH HEMT, our circular structure has a high average breakdown electric-field strength that increases from 0.42 MV/cm to 0.96 MV/cm. The power figure of merit VBR2/RON for the circular HEMT is as high as 1.03×109 V2·Ω-1·cm-2. The divergence of electric field lines at the gate edge and no edge effect account for the breakdown enhancement capability of the circular structure. Experiments and analysis indicate that the circular structure is an effective method to modulate the electric field.
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400100), the National Natural Science Foundation of China (Grant Nos. 11435010, 61474086, and 61804125), and the Natural Science Basic Research Program of Shaanxi Province, China (Grant No. 2016ZDJC-02).
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