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Enhanced electronic and photoelectrical properties of two-dimensional Zn-doped SnS2
Xichen Chuai(揣喜臣), Peng Yin(殷鹏), Jiawei Wang(王嘉玮), Guanhua Yang(杨冠华), Congyan Lu(陆丛研), Di Geng(耿玓), Ling Li(李泠), Can Liu(刘灿), Zhongming Wei(魏钟鸣), and Nianduan Lu(卢年端)
Chin. Phys. B, 2025, 34 (5):
056101.
DOI: 10.1088/1674-1056/adbaca
Alloy engineering, with its ability to tune the electronic band structure, is regarded as an effective method for adjusting the electronic and optoelectronic properties of two-dimensional (2D) semiconductors. However, synthesizing metal-site substitution alloys remains challenging due to the low reactivity of metal precursors and the tendency for spatial phase separation during high-temperature growth. Here, we report the preparation of a high-quality metal-site substitution alloy, Zn$_{0.167}$Sn$_{0.833}$S$_{2}$, via the chemical vapor transport method, which exhibits excellent photoresponsivity and enhanced electrical transport properties. Comprehensive characterization techniques, including Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and electron microscopy, unambiguously confirm the uniform Zn substitution in the as-prepared Zn$_{0.167}$Sn$_{0.833}$S$_{2}$ alloy. Furthermore, the photodetector based on the Zn$_{0.167}$Sn$_{0.833}$S$_{2}$ alloy demonstrated a high on/off ratio of 51 under white light, a wide spectral response range from 350 nm to 900 nm, and a broad dynamic power range of 80 dB under 638-nm illumination. In terms of transport properties, field-effect transistors (FETs) based on Zn$_{0.167}$Sn$_{0.833}$S$_{2}$ achieved a carrier mobility of 6.5 cm$^2\cdot$V$^{-1}\cdot$s$^{-1}$, which is six times higher than that of SnS$_2$. This alloy semiconductor showcases significantly enhanced electronic and optoelectronic properties, offering great potential for the development of high-resolution photodetection technologies.
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