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Chin. Phys. B, 2011, Vol. 20(2): 027306    DOI: 10.1088/1674-1056/20/2/027306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Negative capacitance in doped bi-layer organic light-emitting devices

Li Nuo(李诺),Gao Xin-Dong(高歆栋),Xie Zuo-Ti(谢作提), Sun Zheng-Yi(孙正义), Ding Xun-Min(丁训民),and Hou Xiao-Yuan(侯晓远)
Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China
Abstract  This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.
Keywords:  negative capacitance      doping in different regions      organic light-emitting device  
Received:  09 September 2010      Revised:  25 September 2010      Accepted manuscript online: 
PACS:  73.61.Ph (Polymers; organic compounds)  
  78.60.Fi (Electroluminescence)  
  78.66.Qn (Polymers; organic compounds)  
Fund: Project supported by the Natural Science Foundation of the Shanghai Committee of Science and Technology, China (Grant No. 08JC1402300).

Cite this article: 

Li Nuo(李诺),Gao Xin-Dong(高歆栋),Xie Zuo-Ti(谢作提), Sun Zheng-Yi(孙正义), Ding Xun-Min(丁训民),and Hou Xiao-Yuan(侯晓远) Negative capacitance in doped bi-layer organic light-emitting devices 2011 Chin. Phys. B 20 027306

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