Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

doi:10.1088/1674-1056/25/2/027303

Abstract The effects of gate length L_G on breakdown voltage V_BR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with L_G = 1 μm～ 20 μm. With the increase of L_G, V_BR is first increased, and then saturated at L_G=3 μm. For the HEMT with L_G=1 μm, breakdown voltage V_BR is 117 V, and it can be enhanced to 148 V for the HEMT with L_G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with L_G>3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with L_G = 3 μm～ 20 μm, and their breakdown voltages are in a range of 140 V-156 V.

Keywords: AlGaN/GaN high-electron-mobility transistors (HEMTs) breakdown voltage gate length

Received: 15 August 2015
Revised: 02 October 2015
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61204085).

Corresponding Authors: Yue Hao
E-mail: yhao@xidian.edu.cn

Cite this article:

Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor 2016 Chin. Phys. B 25 027303

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Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

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