Modeling, simulations, and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes

doi:10.1088/1674-1056/abc0dd

Abstract With technology computer-aided design (TCAD) simulation software, we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode (SBD). The parameters of gallium oxide are defined as new material parameters in the material library, and the SBD turn-on and breakdown behavior are simulated. The simulation results reveal that this new structure has a larger turn-on current than Ga₂O₃ SBD and a larger breakdown voltage than GaN SBD. Also, to solve the lattice mismatch problem in the real epitaxy, we add a ZnO layer as a transition layer. The simulations show that the device still has good properties after adding this layer.

Keywords: technology computer-aided design (TCAD) gallium oxide (Ga₂O₃) gallium nitride (GaN) Schottky barrier diode (SBD)

Received: 14 July 2020
Revised: 21 September 2020
Accepted manuscript online: 14 October 2020

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	64.70.kg	(Semiconductors)
	61.72.uj	(III-V and II-VI semiconductors)
	85.30.-z	(Semiconductor devices)

Corresponding Authors: ^†Corresponding author. E-mail: gxia@mail.ubc.ca ^‡Corresponding author. E-mail: yuhy@sustech.edu.cn

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Tao Fang(房涛), Ling-Qi Li(李灵琪), Guang-Rui Xia(夏光睿), and Hong-Yu Yu(于洪宇) Modeling, simulations, and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes 2021 Chin. Phys. B 30 027301

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1. Supporting Information.pdf(115KB)

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Modeling, simulations, and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes

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