Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction

doi:10.1088/1674-1056/23/10/107101

Abstract High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6×10¹⁴ cm ^-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650℃ to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.

Keywords: polarization AlGaN carrier concentration Ohmic contact

Received: 13 March 2014
Revised: 22 April 2014
Accepted manuscript online:

PACS:	71.10.Ca	(Electron gas, Fermi gas)
	71.15.-m	(Methods of electronic structure calculations)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	77.22.Ej	(Polarization and depolarization)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61204098 and 61371046).

Corresponding Authors: Li Shi-Bin
E-mail: shibinli@uestc.edu.cn

About author: 71.10.Ca; 71.15.-m; 73.40.Kp; 77.22.Ej

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Li Shi-Bin (李世彬), Yu Hong-Ping (余宏萍), Zhang Ting (张婷), Chen Zhi (陈志), Wu Zhi-Ming (吴志明) Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction 2014 Chin. Phys. B 23 107101


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Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction

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