Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching

doi:10.1088/1674-1056/19/6/068101

Abstract GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma (ICP) etching technology using a monolayer of nickel (Ni) nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.

Keywords: GaN-based light-emitting diodes nickel nanoparticle extraction efficiency surface roughening

Received: 28 September 2009
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	81.65.Cf	(Surface cleaning, etching, patterning)
	68.55.-a	(Thin film structure and morphology)
	68.35.B-	(Structure of clean surfaces (and surface reconstruction))
	61.46.Df	(Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))
	72.40.+w	(Photoconduction and photovoltaic effects)

Fund: Project supported by the Production and Research Program of Guangdong Province and Ministry of Education (Grant No.~2009B090300338), Guangdong Natural Science Foundation of China (Grant No.~8251063101000007), Guangdong Science and Technology Plan of China

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He An-He(何安和), Zhang Yong(章勇), Zhu Xue-Hui(朱学绘), Chen Xian-Wen(陈献文), Fan Guang-Han(范广涵), and He Miao(何苗) Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching 2010 Chin. Phys. B 19 068101

[1]	Nakamura S and Fasol G 1996 The Blue Laser Diode: GaN Based Light Emitters and Lasers (Berlin: Springer) p.~216
[2]	Wang L, Zhang X P, Xi G Y, Zhao W, Li H T, Jiang Y, Han Y J and Luo Y 2008 Acta Phys. Sin. 57 5923 (in Chinese)
[3]	Zhang J M, Zou D S, Xu C, Zhu Y X, Liang T, Da X L and Shen G D 2007 Chin. Phys. 16 1135
[4]	Schubert E F and Kim J K 2005 Science 308 1274
[5]	Chang S J, Chang C S, Su Y K, Chuang R W, Lin Y C, Shei S C, Lo H M, Lin H Y and Ke J C 2003 IEEE J. Quantum Electron. 39 1439
[6]	Choi H W, Jeon C W, Liu C, Watson I M, Dawson M D, Edwards P R, Martin R W, Tripathy S and Chua S J 2005 Appl. Phys. Lett. 86 021101
[7]	Hong H G, Kim S S, Kim D Y, Lee T, Song J O, Cho J H, Sone C, Park Y and Seong T Y 2006 Appl. Phys. Lett. 88 103505
[8]	Li Y, Zheng R S, Feng Y C, Liu S H and Niu H B 2006 Chin. Phys. 15 702
[9]	Kim D H, Cho C O, Roh Y G, Jeon H, Park Y S, Cho J, Im J S, Sone C, Park Y, Choi W J and Park Q H 2005 Appl. Phys. Lett. 87 203508
[10]	Lee Y J, Kuo H C, Wang S C, Hsu T C, Hsieh M H, Jou M J and Lee B J 2005 IEEE Photon. Technol. Lett. 17 2289
[11]	Yang C C, Horng R H, Lee C E, Lin W Y, Pan K F, Su Y Y and Wuu D S 2005 Jpn. J. Appl. Phys. 44 2525
[12]	Liu C H, Chuang R W, Chang S J, Su Y K, Wu L W and Lin C C 2004 Mater. Sci. Eng. B 112 10
[13]	Pan S M, Tu R C, Fan Y M, Yeh R C and Hsu J T 2003 IEEE Photon. Technol. Lett. 15 646
[14]	Chang S J, Shen C F, Chen W S, Kuo C T, Ko T K, Shei S C and Sheu J K 2007 Appl. Phys. Lett. 91 013504
[15]	Horng R H, Yang C C, Wu J Y, Huang S H, Lee C E and Wuu D S 2005 Appl. Phys. Lett. 86 221101
[16]	Leem D S, Lee T and Seong T Y 2007 Solid State Electron 51 793
[17]	Li S T, Cao J X, Fan G H, Zhang Y, Zheng S W, Sun H Q and Su J 2008 Semicond. Sci. Technol. 23 095003

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Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching

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