The strain relaxation of InAs/GaAs self-organized quantum dot
Liu Yu-Min(刘玉敏), Yu Zhong-Yuan(俞重远), and Ren Xiao-Min(任晓敏)
Institute of Optical Communication and Optoelectronics, Beijing University of Posts and Telecommunications, Beijing 100876, China; Key Laboratory of Optical Communication and Lightwave Technologies, Ministry of Education (Beijing University of Posts and Telecommunications), Beijing 100876, China
Abstract This paper presents a detailed analysis of the dependence of degree of strain relaxation of the self-organized InAs/GaAs quantum dot on the geometrical parameters. Differently shaped quantum dots arranged with different transverse periods are simulated in this analysis. It investigates the total residual strain energy that stored in the quantum dot and the substrate for all kinds of quantum dots with the same volume, as well as the dependence on both the aspect ratio and transverse period. The calculated results show that when the transverse period is larger than two times the base of the quantum dots, the influence of transverse periods can be ignored. The larger aspect ratio will lead more efficient strain relaxation. The larger angle between the faces and the substrate will lead more efficient strain relaxation. The obtained results can help to understand the shape transition mechanism during the epitaxial growth from the viewpoint of energy, because the strain relaxation is the main driving force of the quantum dot's self-organization.
Received: 04 June 2008
Revised: 12 August 2008
Accepted manuscript online:
Fund: Project supported by the National
``973'' Basic Research Program of China (Grant No 2003CB314901), the
National Natural Science Foundation of China (Grant No 60644004),
and the 111 Project of China (High School Innovation and Introducing
Intellect Project
Cite this article:
Liu Yu-Min(刘玉敏), Yu Zhong-Yuan(俞重远), and Ren Xiao-Min(任晓敏) The strain relaxation of InAs/GaAs self-organized quantum dot 2009 Chin. Phys. B 18 881
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