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Chin. Phys. B, 2021, Vol. 30(4): 047802    DOI: 10.1088/1674-1056/abcf3f
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Optical polarization characteristics for AlGaN-based light-emitting diodes with AlGaN multilayer structure as well layer

Lu Xue(薛露), Yi Li(李毅), Mei Ge(葛梅), Mei-Yu Wang(王美玉), and You-Hua Zhu(朱友华)
1 School of Information Science and Technology & Tongke School of Microelectronics, Nantong University, Nantong 226019, China
Abstract  The optical properties of AlGaN-based quantum well (QW) structure with two coupled thin well layers are investigated by the six-by-six K- P method. Compared with the conventional structure, the new structure, especially the one with lower Al-content in the barrier layer, can enhance the TE-/TM-polarized total spontaneous emission rate due to the strong quantum confinement and wide recombination region. For the conventional QW structure, the reduction of well thickness can lead the degree of polarization (DOP) to decrease and the internal quantum efficiency (IQE) to increase. By using the coupled thin well layers, the DOP for the structure with high Al-content in the barrier layer can be improved, while the DOP will further decrease with low Al-content in the barrier layer. It can be attributed to the band adjustment induced by the combination of barrier height and well layer coupling. The IQE can also be further enhanced to 14.8%-20.5% for various Al-content of barrier layer at J=100 A/cm2. In addition, the efficiency droop effect can be expected to be suppressed compared with the conventional structure.
Keywords:  AlGaN-based quantum well      K- P method      internal quantum efficiency      degree of polarization  
Received:  20 August 2020      Revised:  24 November 2020      Accepted manuscript online:  01 December 2020
PACS:  78.66.Fd (III-V semiconductors)  
  78.67.De (Quantum wells)  
  78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)  
  78.67.Pt (Multilayers; superlattices; photonic structures; metamaterials)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61874168), the Jiangsu Province I-U-R Cooperation Project, China (Grant No. BY2019114), and the Nantong Science and Technology Project, China (Grant No. JC2019006).
Corresponding Authors:  Corresponding author. E-mail: liyi2016@ntu.edu.cn   

Cite this article: 

Lu Xue(薛露), Yi Li(李毅), Mei Ge(葛梅), Mei-Yu Wang(王美玉), and You-Hua Zhu(朱友华) Optical polarization characteristics for AlGaN-based light-emitting diodes with AlGaN multilayer structure as well layer 2021 Chin. Phys. B 30 047802

1 Hirayama H, Fujikawa S and Kamata N 2015 Electronics and Communications in Japan 98 1
2 Wang J, Yan J, Guo Y, Zhang Y, Tian Y, Zhu S, Chen X, Sun L and Li J 2015 Scientia Sinica Physica, Mechanica & Astronomica 45 067303
3 Saifaddin B, Almogbel A, Iza M, Albadri A, Al Yamani A, Nakamura S, Zollner C, Foronda H, Wu F, S. Speck J and DenBaars S P 2018 Proc. SPIE 10554 1
4 Nagasawa Y and Hirano A 2018 Appl. Sci. 8 1264
5 Li Y, Zhu Y, Wang M, Deng H and Yin H 2019 Chin. Phys. B 28 097801
6 Wang Y, Rong X, Ivanov S, Jmerik V, Chen Z, Wang H, Wang T, Wang P, Jin P, Chen Y, Kozlovsky V, Sviridov D E, Zverev M, Zhdanova E, Gamov N, Studenov V, Miyake H, Li H, Guo S, Yang X, Xu F, Yu T, Qin Z, Ge W, Shen B and Wang X 2019 Adv. Opt. Mater. 7 1801763
7 Takano T, Mino T, Sakai J, Noguchi N, Tsubaki K and Hirayama H 2017 Appl. Phys. Express 10 031002
8 Zhang Y, Zheng Y, Meng R, Sun C, Tian K, Geng C, Zhang Z H, Liu G and Bi W 2018 IEEE Photon. J. 10 8200809
9 Hideki H, Yusuke T, Tetsutoshi M and Norihiko K 2010 Appl. Phys. Express 3 031002
10 Li Y, Zhu Y, Wang M, Deng H and Yin H 2019 Jpn. J. Appl. Phys. 58 114001
11 Liu C, Ooi Y K, Islam S, Grace Xing H, Jena D and Zhang J 2018 Appl. Phys. Lett. 112 011101
12 Lu L, Wan Z, Xu F, Wang X, Lv C, Shen B, Jiang M and Chen Q 2017 Superlattice Microst. 104 240
13 Li Y, Zhu Y and Wang M Journal of Nantong University (Natural Science Edition) 18 11 (in Chinese)
14 Sato K, Yasue S, Ogino Y, Tanaka S, Iwaya M, Takeuchi T, Kamiyama S and Akasaki I 2019 Appl. Phys. Lett. 114 191103
15 Li Y, Zhu Y, Mei G, Wang M, Deng H and Yin H 2020 Jpn. J. Appl. Phys. 59 084001
16 Chuang S L and Chang C S 1996 Phys. Rev. B 54 2491
17 Chuang S L and Chang C S 1997 Semicond. Sci. Tech. 12 252
18 Wenzel H 2006 Opt. Quantum Electron. 38 953
19 Li Y, Zhu Y, Huang J, Deng H, Wang M and Yin H 2017 J. Appl. Phys. 121 053105
20 Kuo Y K, Chang J Y, Chang H T, Chen F M, Shih Y H and Liou B T 2017 IEEE J. Quantum Electon. 53 1
21 Long H, Wang S, Dai J, Wu F, Chen J, Liang R, Feng Z and Chen C 2018 Opt Express 26 680
22 Ni R, Yu Z, Liu Z, Zhang L, Jia L and Zhang Y 2020 IEEE Photon. Technol. Lett. 32 971
23 Yun J, Shim JI and Hirayama H 2015 Appl. Phys. Express 8 022104
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