Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

doi:10.1088/1674-1056/ab7e93

Abstract The Mg acceptor activation mechanism and hole transport characteristics in AlGaN alloy with Mg doping concentration (～ 10²⁰ cm^-3) grown by metal-organic chemical vapor deposition (MOCVD) are systematically studied through optical and electrical properties. Emission lines of shallow oxygen donors and (V_III complex)^1- as well as V_N³⁺ and neutral Mg acceptors are observed, which indicate that self-compensation is occurred in Mg-doped AlGaN at highly doping levels. The fitting of the temperature-dependent Hall effect data shows that the acceptor activation energy values in Mg-doped Al_xGa_1-xN (x=0.23, 0.35) are 172 meV and 242 meV, and the hole concentrations at room temperature are 1.2×10¹⁸ cm^-3 and 3.3×10¹⁷ cm^-3, respectively. Therefore, it is believed that there exists the combined effect of the Coulomb potentials of the dopants and screening of the Coulomb potentials by a high hole concentration. Moreover, due to the high ionized acceptors' concentration and compensation ratio, the impurity conduction becomes more prominent and the valence band mobility drops sharply at low temperature.

Keywords: AlGaN Mg doping MOCVD cathodo-luminescence Hall measurement

Received: 15 October 2019
Revised: 25 January 2020
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	82.33.Ya	(Chemistry of MOCVD and other vapor deposition methods)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.60.Hk	(Cathodoluminescence, ionoluminescence)

Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403100 and 2017YFB0403101), the National Natural Science Foundation of China (Grant Nos. 61704149, 61674076, and 61605071), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BY2013077, BK20141320, and BE2015111), the Project of Science and Technology Development Program in Shandong Province, China (Grant Nos. 2013YD02054 and 2013YD02008), the Project of Shandong Provincial Higher Educational Science and Technology Program, China (Grant No. J13LN08), the Collaborative Innovation Center of Solid State Lighting and Energy-saving Electronics, Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), the Six-Talent Peaks Project of Jiangsu Province, China (Grant No. XYDXX-081), the Open Fund of the State Key Laboratory on Integrated Optoelectronics, China (Grant No. IOSKL2017KF03), the Project of Autonomous Innovation and Achievement Transformation Program in Zaozhuang City, China (Grant No. 2017GH3), the Overseas Study Program Funded by Shandong Provincial Government, China, the Laboratory Open Fund from Jiangsu Key Laboratory of Photoelectric Information Functional Materials, China, and the Doctoral Foundation Project of Zaozhuang University, China.

Corresponding Authors: Bin Liu, Zi-Li Xie
E-mail: bliu@nju.edu.cn;xzl@nju.edu.cn

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Qing-Jun Xu(徐庆君), Shi-Ying Zhang(张士英), Bin Liu(刘斌), Zhen-Hua Li(李振华), Tao Tao(陶涛), Zi-Li Xie(谢自力), Xiang-Qian Xiu(修向前), Dun-Jun Chen(陈敦军), Peng Chen(陈鹏), Ping Han(韩平), Ke Wang(王科), Rong Zhang(张荣), You-Liao Zheng(郑有炓) Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys 2020 Chin. Phys. B 29 058103

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Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

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