1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China; 2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China; 3. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; 4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China; 5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China; 6. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China
Abstract In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/InxGa1-xN/GaN multiple-quantum-well (MQW) laser diode (LD), the Al composition of inserted p-type AlxGa1-xN electron blocking layer (EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In0.04Ga0.96N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type AlxGa1-xN hole blocking layer (HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of AlxGa1-xN HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of AlxGa1-xN HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.
Fund: Project supported by the Science Challenge Project, China (Grant No. Z2016003), the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
