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Chin. Phys. B, 2008, Vol. 17(4): 1405-1409    DOI: 10.1088/1674-1056/17/4/042
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

Yue Yuan-Zheng(岳远征), Hao Yue(郝跃), Zhang Jin-Cheng(张进城),Feng Qian(冯倩), Ni Jin-Yu(倪金玉), and Ma Xiao-Hua(马晓华)
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  This paper studies systematically the drain current collapse in AlGaN/GaN metal--oxide--semiconductor high electron mobility transistors (MOS-HEMTs) by applying pulsed stress to the device. Low-temperature layer of A12O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition (ALD). For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD A12O3. A small increase in Idd in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Idd-Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD A12O3.
Keywords:  AlGaN/GaN MOS-HEMT      A12O3      passivation  
Received:  26 August 2007      Revised:  10 October 2007      Accepted manuscript online: 
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  81.15.Ef  
  81.65.Rv (Passivation)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by NSFC (Grant No 60736033) and National 973 Basic Research Project (Grant No 51327020301).

Cite this article: 

Yue Yuan-Zheng(岳远征), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), Ni Jin-Yu(倪金玉), and Ma Xiao-Hua(马晓华) A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress 2008 Chin. Phys. B 17 1405

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