Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications

doi:10.1088/1674-1056/ac2b1f

Abstract A GaN-based high electron mobility transistor (HEMT) with p-GaN islands buried layer (PIBL) for terahertz applications is proposed. The introduction of a p-GaN island redistributes the electric field in the gate-drain channel region, thereby promoting the formation of electronic domains in the two-dimensional electron gas (2DEG) channel. The formation and regulation mechanism of the electronic domains in the device are investigated using Silvaco-TCAD software. Simulation results show that the 0.2 μ m gate HEMT with a PIBL structure having a p-GaN island doping concentration (N_p) of 2.5×10¹⁸ cm^-3-3×10¹⁸ cm^-3 can generate stable oscillations up to 344 GHz-400 GHz under the gate-source voltage (V_gs) of 0.6 V. As the distance (D_p) between the p-GaN island and the heterojunction interface increases from 5 nm to 15 nm, the fundamental frequency decreases from 377 GHz to 344 GHz, as well as the ratio of oscillation current amplitude of the fundamental component to the average component I_f1/I_avg ranging from 2.4% to 3.84%.

Keywords: p-GaN island high electron mobility transistor (HEMT) AlGaN/GaN electron domain

Received: 29 June 2021
Revised: 25 September 2021
Accepted manuscript online:

PACS:	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	05.10.Ln	(Monte Carlo methods)
	61.72.uj	(III-V and II-VI semiconductors)
	52.70.Gw	(Radio-frequency and microwave measurements)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.61974108 and 61674117),the National Natural Science Foundation for Young Scholars of China (Grants No.61804119),and the Postdoctoral Science Foundation of China (Grants No.2018M643576).

Corresponding Authors: Lin-An Yang,E-mail:layang@xidian.edu.cn
E-mail: layang@xidian.edu.cn

About author: 2021-9-29

Cite this article:

Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications 2022 Chin. Phys. B 31 058505

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Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications

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