Effects of transverse mode coupling and optical confinement factor on gallium-nitride based laser diode
Jin Xiao-Ming(靳晓民)a)b)†, Zhang Bei(章蓓)a)‡,Dai Tao(代涛)a), and Zhang Guo-Yi(张国义)a)
a School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing 100871, China; b Electrical Engineering Department, California Polytechnic State University, San Luis Obispo, CA 93407, USA
Abstract We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride (GaN) laser diodes (LDs) theoretically. For the particular LD structure, composed of approximate 4 $\mu $m thick n-GaN substrate layer, the maximum optical confinement factor was found to be corresponding to the 5$^{\rm th}$ order transverse mode, the so-called lasing mode. Moreover, the value of the maximum confinement factor varies periodically when increasing the n-side GaN layer thickness, which simultaneously changes and increases the oscillation mode order of the GaN LD caused by the effects of mode coupling. The effects of the thickness and the average composition of Al in the AlGaN/GaN superlattice on the optical confinement factor are also presented. Finally, the mode coupling and optimization of the layers in the GaN-based LD are discussed.
Received: 08 March 2007
Revised: 29 October 2007
Accepted manuscript online:
Fund: Project supported by the Wang
Faculty Fellowship at Peking University, Beijing, China, 2006-2007
through California State University (CSU) International Programs
USA; the National Basic Research Program of China (Grant No
2007CB307004), the National High
Cite this article:
Jin Xiao-Ming(靳晓民), Zhang Bei(章蓓), Dai Tao(代涛), and Zhang Guo-Yi(张国义) Effects of transverse mode coupling and optical confinement factor on gallium-nitride based laser diode 2008 Chin. Phys. B 17 1274
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