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On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases |
Yong Lei(雷勇), Jing Su(苏静), Hong-Yan Wu(吴红艳), Cui-Hong Yang(杨翠红), Wei-Feng Rao(饶伟锋) |
Department of Materials Physics, School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China |
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Abstract In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current-voltage (I-V-T) characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to -150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer. A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I-V curves is obtained.
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Received: 23 August 2016
Revised: 01 November 2016
Accepted manuscript online:
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PACS:
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71.55.Eq
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(III-V semiconductors)
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72.10.-d
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(Theory of electronic transport; scattering mechanisms)
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73.50.-h
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(Electronic transport phenomena in thin films)
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Corresponding Authors:
Yong Lei
E-mail: leiyong@nuist.edu.cn
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Cite this article:
Yong Lei(雷勇), Jing Su(苏静), Hong-Yan Wu(吴红艳), Cui-Hong Yang(杨翠红), Wei-Feng Rao(饶伟锋) On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases 2017 Chin. Phys. B 26 027105
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