The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes

doi:10.1088/1674-1056/21/6/068505

Abstract P-AlGaN/P-GaN superlattices are investigated in blue InGaN light-emitting diodes as electron blocking layers. The simulation results show that efficiency droop is markedly improved due to two reasons: (i) enhanced hole concentration and hole carrier transport efficiency in AlGaN/GaN superlattices, and (ii) enhanced blocking of electron overflow between multiple quantum-wells and AlGaN/GaN superlattices.

Keywords: P-AlGaN/P-GaN superlattices numerical simulation efficiency droop

Received: 24 June 2011
Revised: 14 November 2011
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the Project of Combination of Production and Research Guided by Education Ministry of China in 2009 (Grant No. 2009B090300338) and the LED Industrial Projects of Special Funds Strategic Emerging Industries in 2011, Guangdong Province, China (Grant No. 2010A081002005).

Corresponding Authors: Fan Guang-Han
E-mail: gfan@scnu.edu.cn

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Gong Chang-Chun(龚长春), Fan Guang-Han(范广涵), Zhang Yun-Yan(张运炎), Xu Yi-Qin(许毅钦), Liu Xiao-Ping(刘小平), Zheng Shu-Wen(郑树文), Yao Guang-Rui(姚光锐), and Zhou De-Tao(周德涛) The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes 2012 Chin. Phys. B 21 068505

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The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes

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