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Distribution of donor states on the surfaceof AlGaN/GaN heterostructures |
| Yue-Bo Liu(柳月波)1, Hong-Hui Liu(刘红辉)1, Jun-Yu Shen(沈俊宇)1, Wan-Qing Yao(姚婉青)1, Feng-Ge Wang(王风格)1, Yuan Ren(任远)1, Min-Jie Zhang(张敏杰)1, Zhi-Sheng Wu(吴志盛)1,2, Yang Liu(刘扬)1,2, and Bai-Jun Zhang(张佰君)1,2,† |
1 School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China;
2 State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China |
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Abstract The uniform distribution model of the surface donor states in AlGaN/GaN heterostructures has been widely used in the theoretical calculation. A common and a triple-channel AlGaN/GaN heterostructure Schottky barrier diodes have been fabricated to verify the models, but the calculation results show the uniform distribution model can not provide enough electrons to form three separate 2DEGs in the triple-channel AlGaN/GaN heterostructure. Our experiments indicate the uniform distribution model is not quite right, especially for the multiple-channel AlGaN/GaN heterostructures. Besides, it is found the exponential distribution model possibly matches the actual distribution of the surface donor states better, which allows the 2DEG to form in each channel structure during the calculation. The exponential distribution model would be helpful in the research field.
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Received: 10 March 2021
Revised: 03 June 2021
Accepted manuscript online: 03 June 2021
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PACS:
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81.05.Ea
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(III-V semiconductors)
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73.20.At
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(Surface states, band structure, electron density of states)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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| Fund: Project supported by the Science & Technology Plan of Guangdong Province, China (Grant Nos. 2019B010132001 and 2019B010132003), the joint funding of the Nature Science Foundation of China (NSFC) & the Macao Science and Technology Development Fund (FDCT) of China (Grant No. 62061160368), the National Key Research and Development Program of China (Grant Nos. 2016YFB0400105 and 2017YFB0403001), and the Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics, Sun Yat-sen University, China (Grant No. 20167612042080001). |
Corresponding Authors:
Bai-Jun Zhang
E-mail: zhbaij@mail.sysu.edu.cn
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Cite this article:
Yue-Bo Liu(柳月波), Hong-Hui Liu(刘红辉), Jun-Yu Shen(沈俊宇), Wan-Qing Yao(姚婉青), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君) Distribution of donor states on the surfaceof AlGaN/GaN heterostructures 2021 Chin. Phys. B 30 128102
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