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Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers |
Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Zhong Jian (钟健), Yao Yao (姚尧), Yang Fan (杨帆), Xiang Peng (向鹏), Zhang Bai-Jun (张佰君), Liu Yang (刘扬) |
School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China |
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Abstract The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) AlN interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the Al atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-AlN, which causes a conduction-type conversion at low temperature (50 K) and may further influence the electrical behavior of this structure.
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Received: 22 December 2012
Revised: 04 February 2013
Accepted manuscript online:
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PACS:
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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78.55.Cr
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(III-V semiconductors)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB923200), the National "863" Project of China (Grant No. 2011AA03A101), the Foundation of the Key Technologies R & D Program of Guangdong Province, China (Grant No. 2007A010500011), the International Science and Technology Cooperation Program of China (Grant No. 2012DFG52260), and the National Science Foundation of China-Guangdong Province Jointed Foundation (Grant No. U0834001). |
Corresponding Authors:
Liu Yang
E-mail: liuy69@mail.sysu.edu.cn
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Cite this article:
Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Zhong Jian (钟健), Yao Yao (姚尧), Yang Fan (杨帆), Xiang Peng (向鹏), Zhang Bai-Jun (张佰君), Liu Yang (刘扬) Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers 2013 Chin. Phys. B 22 088104
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[1] |
Saito W, Omura I, Ogura T and Ohashi H 2004 Solid State Electron. 48 1555
|
[2] |
Wen Y, He Z, Li J, Luo R, Xiang P, Deng Q, Xu G, Shen Z, Wu Z, Zhang B, Jiang H, Wang G and Liu Y 2011 Appl. Phys. Lett. 98 72103
|
[3] |
Hongbo Y, Kemal Ozturk M, Ozcelik S and Ozbay E 2006 J. Crystal Growth 293 273
|
[4] |
Seifert W, Franzheld R, Butter E, Sobotta H and Riede V 1983 Crystal Res. Technol. 18 383
|
[5] |
Wetzel C, Suski T, Ager Iii J W, Weber E R, Haller E E, Fischer S, Meyer B K, Molnar R J and Perlin P 1997 Phys. Rev. Lett. 78 3923
|
[6] |
Heikman S, Keller S, Denbaars S P and Mishra U K 2002 Appl. Phys. Lett. 81 439
|
[7] |
Wang Y, Yu N, Deng D, Li M, Sun F and Lau K 2010 Sci. China: Phys. Mech. & Astron. 53 1578
|
[8] |
Webb J B, Tang H, Rolfe S and Bardwell J A 1999 Appl. Phys. Lett. 75 953
|
[9] |
Polyakov A Y, Smirnov N B, Govorkov A V and Pearton S J 2004 J. Vac. Sci. & Technol. B: Microelectronics and Nanometer Structures 22 120
|
[10] |
Bougrioua Z, Azize M, Lorenzini P, Laügt M and Haas H 2005 Physica Status Solidi (a) 202 536
|
[11] |
Bougrioua Z, Moerman I, Nistor L, Van Daele B, Monroy E, Palacios T, Calle F and Leroux M 2003 Physica Status Solidi (a) 195 93
|
[12] |
Wen Y, He Z, Li J, Luo R, Xiang P, Deng Q, Xu G, Shen Z, Wu Z, Zhang B, Jiang H, Wang G and Liu Y 2011 Appl. Phys. Lett. 98 72103
|
[13] |
He Z, Li J, Wen Y, Shen Z, Yao Y, Yang F, Ni Y Q, Wu Z, Zhang B and Liu Y 2012 Jpn. J. Appl. Phys. 51 54103
|
[14] |
Gang X, Xu E, Hashemi N, Bo Z, Fu F Y and Ng W T 2012 Chin. Phys. B 21 086105
|
[15] |
Liu Z Y, Zhang J C and Duan H T 2011 Chin. Phys. B 20 097701
|
[16] |
Acar S, Lisesivdin S B, Kasap M, Elik S O Z C C and Zbay E O 2008 Thin Solid Films 516 2041
|
[17] |
Fan Z Y, Li J, Nakarmi M L, Lin J Y and Jiang H X 2006 Appl. Phys. Lett. 88 73513
|
[18] |
Hu X, Deng J, Pala N, Gaska R, Shur M S, Chen C Q, Yang J, Simin G, Khan M A, Rojo J C and Others 2003 Appl. Phys. Lett. 82 1299
|
[19] |
Milnes A G 1973 Deep Impurities in Semiconductors (New York: Wiley)
|
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