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Chin. Phys. B, 2011, Vol. 20(11): 117302    DOI: 10.1088/1674-1056/20/11/117302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

High temperature characteristics of AlGaN/GaN high electron mobility transistors

Yang Li-Yuan(杨丽媛)a)†, Hao Yue(郝跃) a), Ma Xiao-Hua(马晓华)a)b), Zhang Jin-Cheng(张进成)a), Pan Cai-Yuan(潘才渊)b), Ma Ji-Gang (马骥刚) b), Zhang Kai(张凯)a), and Ma Ping(马平)b)
a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; b School of Technical Physics, Xidian University, Xi'an 710071, China
Abstract  Direct current (DC) and pulsed measurements are performed to determine the degradation mechanisms of AlGaN/GaN high electron mobility transistors (HEMTs) under high temperature. The degradation of the DC characteristics is mainly attributed to the reduction in the density and the mobility of the two-dimensional electron gas (2DEG). The pulsed measurements indicate that the trap assisted tunneling is the dominant gate leakage mechanism in the temperature range of interest. The traps in the barrier layer become active as the temperature increases, which is conducive to the electron tunneling between the gate and the channel. The enhancement of the tunneling results in the weakening of the current collapse effects, as the electrons trapped by the barrier traps can escape more easily at the higher temperature.
Keywords:  AlGaN/GaN high electron mobility transistor      high temperature characteristics      traps      current collapse  
Received:  25 May 2011      Revised:  11 July 2011      Accepted manuscript online: 
PACS:  73.61.Ey (III-V semiconductors)  
  85.30.Tv (Field effect devices)  

Cite this article: 

Yang Li-Yuan(杨丽媛), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Pan Cai-Yuan(潘才渊), Ma Ji-Gang (马骥刚), Zhang Kai(张凯), and Ma Ping(马平) High temperature characteristics of AlGaN/GaN high electron mobility transistors 2011 Chin. Phys. B 20 117302

[1] Daumiller I, Kirchner C, Kamp M, Ebeling K J and Kohn E 1999 IEEE Electron Device Lett. 20 448
[2] Neudeck P G, Okojie R S and Chen L Y 2002 Proc. IEEE 90 1065
[3] Lin F, Shen B, Lu L W,Ma N, Xu F J, Miao Z L, Song J, Liu X Y, Wei K and Huang J 2010 Chin. Phys. B 19 127304
[4] Chang Y C, Zhang Y M and Zhang Y M 2006 Chin. Phys. 15 636
[5] Zhang A P, Dang G, Ren F, Han J, Polyakov A Y, Smirnov N B, Govorkov A V, Redwing J M, Cho H and Pearton J 2000 Appl. Phys. Lett. 76 3816
[6] Miller E J, Yua E T, Waltereit P and Speck J S 2004 Appl. Phys. Lett. 84 535
[7] Sathaiya D M and Karmalkar S 2007 IEEE Trans. Electron Device 54 2614
[8] Smith KV, Yu E T, Redwing J M and Boutros K S 2000 J. Electron. Mater. 29 274
[9] Stoklas R, Gregusova D, Novak J, Vescan A and Kordos P 2008 Appl. Phys. Lett. 93 124103
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