Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

doi:10.1088/1674-1056/25/12/127305

Abstract

A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.

Keywords: AlGaN/GaN HEMT source-connected T-shaped field-plate breakdown voltage FP efficiency

Received: 15 August 2016
Revised: 16 October 2016
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 605119425012).

Corresponding Authors: Ming Du
E-mail: duming@mail.xidian.edu.cn

Cite this article:

Wei Mao(毛维), Ju-Sheng Fan(范举胜), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate 2016 Chin. Phys. B 25 127305

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Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

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