Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/23/1/017303

Abstract This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors (HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.

Keywords: AlGaN/GaN high electron mobility transistor off-state stress electron detrapping degradation

Received: 08 March 2013
Revised: 18 April 2013
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.50.Gr	(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the Program for New Century Excellent Talents in Universities, China (Grant No. NCET-12-0915).

Corresponding Authors: Ma Xiao-Hua
E-mail: xhma@xidian.edu.cn

Cite this article:

Ma Xiao-Hua (马晓华), Jiang Yuan-Qi (姜元祺), Wang Xin-Hua (王鑫华), Lü Min (吕敏), Zhang Huo (张霍), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors 2014 Chin. Phys. B 23 017303

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Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

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