INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors |
Tong Zhang(张彤)1, Taofei Pu(蒲涛飞)1, Tian Xie(谢天)1, Liuan Li(李柳暗)2, Yuyu Bu(补钰煜)3, Xiao Wang(王霄)3, Jin-Ping Ao(敖金平)1,3 |
1 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan;
2 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
3 School of Microelectronics, Xidian University, Xi'an 710071, China |
|
|
Abstract In this paper, we adopted thermally stable HfOxNy as gate dielectric for TiN/HfOxNy/AlGaN/GaN heterostructure field-effect transistors (HFETs) application. It demonstrated that the surface morphologies, composition, and optical properties of the HfOxNy films were dependent on oxygen flow rate in the O2/N2/Ar mixture sputtering ambient. The obtained metal-oxide-semiconductor heterostructure field-effect transistors by depositing HfO2 and HfOxNy dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900 ℃, the device using HfOxNy dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO2 gated one at 600 ℃. This result shows that the HfOxNy dielectric is a promising candidate for the self-aligned gate process.
|
Received: 25 January 2018
Revised: 08 May 2018
Accepted manuscript online:
|
|
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000). |
Corresponding Authors:
Liuan Li, Jin-Ping Ao
E-mail: liliuan@mail.sysu.edu.cn;jpao@ee.tokushima-u.ac.jp
|
Cite this article:
Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平) Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors 2018 Chin. Phys. B 27 078503
|
[1] |
Iwakami S, Yanagihara M, Machida O, Chino E, Kaneko N, Goto H and Ohtsuka K 2004 Jpn. J. Appl. Phys. 43 L831
|
[2] |
Sang D, Li H and Wang Q 2016 Nanotechnology 27 072501
|
[3] |
Zhang J, Wang L, Li L, Wang Q, Jiang Y, Zhu H and Ao J P 2016 Chin. Phys. B 25 087308
|
[4] |
Li L, Zhang J, Liu Y and Ao J P 2016 Chin. Phys. B 25 038503
|
[5] |
Zhang J, Wang L, Wang Q, Jiang Y, Li L, Zhu H and Ao J P 2016 Semicond. Sci. Tech. 31 035015
|
[6] |
Wang L, Zhang J, Li L, Maeda Y and Ao J P 2017 Chin. Phys. B 26 037201
|
[7] |
Zhang H and Solanki R 2001 J. Electrochem. Soc. 148 F63
|
[8] |
Houssa M, Pantisano L, Ragnarsson L A, Degraeve R, Schram T, Pourtois G, De Gendt S, Groeseneken G and Heyns M M 2006 Mater. Sci. Eng. R-Rep. 51 37
|
[9] |
Wang G M, Moses D, Heeger A J, Zhang H M, Narasimhan M and Demaray R E 2004 J. Appl. Phys. 95 316
|
[10] |
Neumayer D A and Cartier E 2001 J. Appl. Phys. 90 1801
|
[11] |
He G, Gao J, Chen H, Cui J, Sun Z and Chen X 2014 ACS Appl. Mater. Inter 6 22013
|
[12] |
Zhang J W, He G, Zhou L, Chen H S, Chen X S, Chen X F, Deng B, Lv J G and Sun Z Q 2014 J. Alloy. Compd. 611 253
|
[13] |
Kim H, McIntyre P C and Saraswat K C 2003 Appl. Phys. Lett. 82 106
|
[14] |
Willk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
|
[15] |
Cheng C L, Liao K S C and Wang T K 2006 Solid-State Electron. 50 103
|
[16] |
He G, Fang Q and Zhang L D 2006 Mater. Sci. Semicon. Proc. 9 870
|
[17] |
Choi C H, Jeon T S, Clark R and Kwong D L 2003 IEEE Electr. Device Lett. 24 215
|
[18] |
Park J H, Hyun J S, Kang B C and Boo J H 2007 Surf. Coat. Technol. 201 5336
|
[19] |
Kang C S, Cho H J, Onishi K, Nieh R, Choi R, Gopalan S, Krishnan S, Han J H and Lee J C 2002 Appl. Phys. Lett. 81 2593
|
[20] |
Wang W, Nabatame T and Shimogaki Y 2005 Surf. Sci. 588 108
|
[21] |
Feng L P, Li N, Tian H and Liu Z T 2014 J. Mater. Sci. 49 1875
|
[22] |
Tan S T, Chen B J, Sun X W, Fan W J, Kwok H S, Zhang X H and Chua S J 2005 J. Appl. Phys. 98 013505
|
[23] |
He G, Chen X S and Sun Z Q 2013 Surf. Sci. Rep. 68 68
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|