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Chin. Phys. B, 2018, Vol. 27(7): 078503    DOI: 10.1088/1674-1056/27/7/078503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

Tong Zhang(张彤)1, Taofei Pu(蒲涛飞)1, Tian Xie(谢天)1, Liuan Li(李柳暗)2, Yuyu Bu(补钰煜)3, Xiao Wang(王霄)3, Jin-Ping Ao(敖金平)1,3
1 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan;
2 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
3 School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  

In this paper, we adopted thermally stable HfOxNy as gate dielectric for TiN/HfOxNy/AlGaN/GaN heterostructure field-effect transistors (HFETs) application. It demonstrated that the surface morphologies, composition, and optical properties of the HfOxNy films were dependent on oxygen flow rate in the O2/N2/Ar mixture sputtering ambient. The obtained metal-oxide-semiconductor heterostructure field-effect transistors by depositing HfO2 and HfOxNy dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900 ℃, the device using HfOxNy dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO2 gated one at 600 ℃. This result shows that the HfOxNy dielectric is a promising candidate for the self-aligned gate process.

Keywords:  AlGaN/GaN HFET      gate dielectric      HfOxNy      thermal stability  
Received:  25 January 2018      Revised:  08 May 2018      Accepted manuscript online: 
PACS:  85.30.-z (Semiconductor devices)  
  77.55.D-  
  61.82.Ms (Insulators)  
  68.60.Dv (Thermal stability; thermal effects)  
Fund: 

Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000).

Corresponding Authors:  Liuan Li, Jin-Ping Ao     E-mail:  liliuan@mail.sysu.edu.cn;jpao@ee.tokushima-u.ac.jp

Cite this article: 

Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平) Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors 2018 Chin. Phys. B 27 078503

[1] Iwakami S, Yanagihara M, Machida O, Chino E, Kaneko N, Goto H and Ohtsuka K 2004 Jpn. J. Appl. Phys. 43 L831
[2] Sang D, Li H and Wang Q 2016 Nanotechnology 27 072501
[3] Zhang J, Wang L, Li L, Wang Q, Jiang Y, Zhu H and Ao J P 2016 Chin. Phys. B 25 087308
[4] Li L, Zhang J, Liu Y and Ao J P 2016 Chin. Phys. B 25 038503
[5] Zhang J, Wang L, Wang Q, Jiang Y, Li L, Zhu H and Ao J P 2016 Semicond. Sci. Tech. 31 035015
[6] Wang L, Zhang J, Li L, Maeda Y and Ao J P 2017 Chin. Phys. B 26 037201
[7] Zhang H and Solanki R 2001 J. Electrochem. Soc. 148 F63
[8] Houssa M, Pantisano L, Ragnarsson L A, Degraeve R, Schram T, Pourtois G, De Gendt S, Groeseneken G and Heyns M M 2006 Mater. Sci. Eng. R-Rep. 51 37
[9] Wang G M, Moses D, Heeger A J, Zhang H M, Narasimhan M and Demaray R E 2004 J. Appl. Phys. 95 316
[10] Neumayer D A and Cartier E 2001 J. Appl. Phys. 90 1801
[11] He G, Gao J, Chen H, Cui J, Sun Z and Chen X 2014 ACS Appl. Mater. Inter 6 22013
[12] Zhang J W, He G, Zhou L, Chen H S, Chen X S, Chen X F, Deng B, Lv J G and Sun Z Q 2014 J. Alloy. Compd. 611 253
[13] Kim H, McIntyre P C and Saraswat K C 2003 Appl. Phys. Lett. 82 106
[14] Willk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
[15] Cheng C L, Liao K S C and Wang T K 2006 Solid-State Electron. 50 103
[16] He G, Fang Q and Zhang L D 2006 Mater. Sci. Semicon. Proc. 9 870
[17] Choi C H, Jeon T S, Clark R and Kwong D L 2003 IEEE Electr. Device Lett. 24 215
[18] Park J H, Hyun J S, Kang B C and Boo J H 2007 Surf. Coat. Technol. 201 5336
[19] Kang C S, Cho H J, Onishi K, Nieh R, Choi R, Gopalan S, Krishnan S, Han J H and Lee J C 2002 Appl. Phys. Lett. 81 2593
[20] Wang W, Nabatame T and Shimogaki Y 2005 Surf. Sci. 588 108
[21] Feng L P, Li N, Tian H and Liu Z T 2014 J. Mater. Sci. 49 1875
[22] Tan S T, Chen B J, Sun X W, Fan W J, Kwok H S, Zhang X H and Chua S J 2005 J. Appl. Phys. 98 013505
[23] He G, Chen X S and Sun Z Q 2013 Surf. Sci. Rep. 68 68
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