Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation

doi:10.1088/1674-1056/abfd9e

Abstract The dislocation slip behaviors in GaN bulk crystal are investigated by nanoindentation, the dislocation distribution patterns formed around an impress are observed by cathodoluminescence (CL) and cross-sectional transmission electron microscope (TEM). Dislocation loops, vacancy luminescence, and cross-slips show hexagonal symmetry around the <11-20> and <1-100> direction on c-plane. It is found that the slip planes of dislocation in GaN crystal are dominated in {0001} basal plane and {10-11} pyramid plane. According to the dislocation intersection theory, we come up with the dislocation formation process and the related mechanisms are discussed.

Keywords: GaN dislocation nanoindentation cathodoluminescence TEM

Received: 23 February 2021
Revised: 20 April 2021
Accepted manuscript online: 01 May 2021

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	61.72.Ff	(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
	61.72.Lk	(Linear defects: dislocations, disclinations)

Corresponding Authors: Jian-Feng Wang, Ke Xu
E-mail: jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn

Cite this article:

Kai-Heng Shao(邵凯恒), Yu-Min Zhang(张育民), Jian-Feng Wang(王建峰), and Ke Xu(徐科) Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation 2021 Chin. Phys. B 30 116104

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Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation

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