| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures |
| Shuang-Tao Liu(刘双韬)1,2, Jing Yang(杨静)1, De-Gang Zhao(赵德刚)1,3, De-Sheng Jiang(江德生)1, Feng Liang(梁锋)1, Ping Chen(陈平)1, Jian-Jun Zhu(朱建军)1, Zong-Shun Liu(刘宗顺)1, Wei Liu(刘炜)1, Yao Xing(邢瑶)1, Li-Yuan Peng(彭莉媛)1, Li-Qun Zhang(张立群)4, Wen-Jie Wang(王文杰)5, Mo Li(李沫)5 |
1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
4 Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, China;
5 Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China |
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Abstract In this work, we study the influence of carrier gas H2 flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H2 flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H2 flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.
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Received: 06 September 2018
Revised: 18 September 2018
Accepted manuscript online:
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PACS:
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78.40.Fy
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(Semiconductors)
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78.55.Cr
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(III-V semiconductors)
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71.20.Nr
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(Semiconductor compounds)
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| Fund: Project supported by the the Science Challenge Project of China (Grant No. TZ2016003), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, and 61474110), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037). |
Corresponding Authors:
Jing Yang, De-Gang Zhao
E-mail: yangjing333@semi.ac.cn;dgzhao@red.semi.ac.cn
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Cite this article:
Shuang-Tao Liu(刘双韬), Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Yuan Peng(彭莉媛), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫) Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures 2018 Chin. Phys. B 27 127803
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