Abstract This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors. It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device. The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail. Under the ON-state stress, the strong electric-field led to degradation of SiNx passivation located in the gate-drain region. As the thickness of SiNx passivation increases, the density of the surface state will be increased to some extent. Meanwhile, it is found that the high NH3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.
Fund: Project supported by the State Key
Program of National Natural Science Foundation of China (Grant
No.~60736033).
Cite this article:
Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高) Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors 2010 Chin. Phys. B 19 047301
[1]
Uemoto Y, Shibata D, Yanagihara M, Ishida H, Matsuo H, Nagai S, Batta N, Ming L, Ueda T and Tanaka T 2007 IEEE IEDM Tech. Digest}. 861
[2]
Wu Y F, Kapolnex D and Ibbetson J P 2007 IEEE IEDM Tech. Digest}. 405
[3]
Jimenez J L, Chowdhury U, Kao M Y, Balistreri A, Lee C, Saunier P and Chao P C 2008 IEEE Int. Rel. Phys. Symp. Proceedings
[4]
Joh J and Alamo J A 2006 IEEE IEDM Tech. Digest}. 415
[5]
Joh J and Alamo J A 2008 IEEE Electron Dev. Lett. 29 287
[6]
Zanoni E, Meneghesso G, Verzuesi G and Danesin F 2007 IEEE IEDM Tech. Digest}. 381
[7]
Gu W P, Duan H T, Ni J Y, Hao Y, Zhang J C, Feng Q and Ma X H 2009 Chin. Phys. B 18 1601
[8]
Wei W, Lin R B, Hao Y and Feng Q 2008 Chin. Phys. B 17 467
[9]
Gu W P, Hao Y, Zhang J C, Wang C, Feng Q and Ma X H 2009 Acta Phys. Sin. 58 511 (in Chinese)
[10]
Mittereder J A, Binari S C, Klein P B, Roussos J A, Katzer D S and Storm D F 2003 Appl. Phys. Lett. 83 1650
[11]
Sozza A, Dua C, Morvan E, Delage S, Rampazzo F, Tazzoli A, Danesin F and Meneghesso G 2005 IEEE IEDM Tech. Digest}. 590
[12]
Sarua A, Ji H, Kuball M, Uren M J, Martin T, Nash K J, Hilton K P and Balmer R S 2006 Appl. Phys. Lett. 88 103502
[13]
Binari S C, Klein P B and Kazior T E 2002 Proc. IEEE 9 1048
[14]
Kikkawa T, Nagahara M, Okamoto N, Tateno Y, Yamaguchi Y, Hara N, Joshin K and Asbeck P M 2001 IEEE IEDM Tech. Digest}. 585
[15]
Dieci D, Sozzi G, Menozzi R, Tediosi E, Lanzieri C and Canali C 2001 IEEE Trans. Electron Devices 48 1929
[16]
Menozzi R, Cova P, Canali C and Fantini F 1996 IEEE Trans. Electron Devices 43 543
[17]
Schroder D K 2006 Semiconductor Material and Device Characterization} 3rd ed. (Hoboken: Wiley NJ)
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
