a Laboratory for High Intensity Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; b State Key Laboratory for Optical and Electric Materials and Technology, Zhongshan University, Guangzhou 510275, China
Abstract The energy levels of zinc-blende GaN quantum dots (QDs) are studied within the framework of the effective-mass envelope-function approximation. The dependence of the energy of electron and hole states on the quantum dot (QD) size is presented. The selection rules for optical transitions are given and the oscillator strengths of the dipole-allowed transitions for various QD radii are calculated with the wavefunctions of quantized energy levels. The theoretical absorption spectrum of GaN QDs is in good agreement with the existing experimental result.
Received: 25 February 2003
Revised: 29 April 2003
Accepted manuscript online:
Fund: Project supported by the Shanghai Foundation of Science & Technology, China (Grant No 0159nm022), the National Natural Science Foundation of China (Grant No 60108002), and the State Key Program of Basic Research of China (Grant No G1999075200).
Cite this article:
Feng Dong-Hai (冯东海), Jia Tian-Qing (贾天卿), Xu Zhi-Zhan (徐至展) Electronic structure and optical properties of zinc-blende GaN quantum dots 2003 Chinese Physics 12 1016
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