Calculations of two dimensional electron gas distributions in AlGaN/GaN material system
Guo Bao-Zeng(郭宝增)a)†, Gong Na(宫娜)a), and Yu Fu-Qiang(于富强)b)
a College of Electronic and Informational Engineering, Hebei University, Baoding 071002, China; b College of Physics, Hebei Normal University, Shijiazhuang 050016, China
Abstract This paper presents calculating results of the two-dimensional electron gas (2DEG) distributions in AlGaN/GaN material system by solving the Schrödinger and Poisson equations self-consistently. Due to high 2DEG density in the AlGaN/GaN heterojunction interface, the exchange correlation potential should be considered among the potential energy item of Schrödinger equation. Analysis of the exchange correlation potential is given. The dependencies of the conduction band edge, 2DEG density on the Al mole fraction are presented. The polarization fields have strong influence on 2DEG density in the AlGaN/GaN heterojunction, so the dependency of the conduction band edge on the polarization is also given.
Accepted manuscript online:
PACS:
73.21.-b
(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)
(Surface states, band structure, electron density of states)
Fund: Project supported by the Foundation
of Hebei Education Department, China (Grant No 2003130).
Cite this article:
Guo Bao-Zeng(郭宝增), Gong Na(宫娜), and Yu Fu-Qiang(于富强) Calculations of two dimensional electron gas distributions in AlGaN/GaN material system 2008 Chin. Phys. B 17 290
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