Photoemission of graded-doping GaN photocathode

doi:10.1088/1674-1056/20/3/037902

Abstract We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×10¹⁷ cm^-3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.

Keywords: GaN photocathode graded-doping photoemission quantum efficiency

Received: 01 July 2010
Revised: 11 October 2010
Accepted manuscript online:

PACS:	79.60.-i	(Photoemission and photoelectron spectra)
	61.72.U-	(Doping and impurity implantation)
	85.60.Ha	(Photomultipliers; phototubes and photocathodes)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60871012) and the Research Fund of Nanjing University of Science and Technology (Grant No. 2010ZYTS032).

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Fu Xiao-Qian(付小倩), Chang Ben-Kang(常本康), Wang Xiao-Hui(王晓晖), Li Biao(李飙), Du Yu-Jie(杜玉杰), and Zhang Jun-Ju(张俊举) Photoemission of graded-doping GaN photocathode 2011 Chin. Phys. B 20 037902

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Photoemission of graded-doping GaN photocathode

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