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Chin. Phys. B, 2008, Vol. 17(12): 4648-4651    DOI: 10.1088/1674-1056/17/12/053
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Study of (Ga, Mn)N prepared by Mn-Ion implantation using optical techniques

Xu Da-Qing (徐大庆), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Li Pei-Xian (李培咸), Wang Chao (王超), Lü Hong-Liang (吕红亮), Tang Xiao-Yan (汤晓燕), Wang Yue-Hu (王悦湖)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  This paper reports that (Ga, Mn)N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed using x-ray diffraction(XRD). Detailed XRD measurements have revealed the characteristic of Mn-Ion implanted GaN with a small contribution of other compounds. With Raman spectroscopy measurements, the spectra corresponding to the intrinsic GaN layers demonstrate three Raman active excitations at 747, 733 and 566 cm-1 identified as E1(LO), A1(LO) and E2H, respectively. The Mn-doped GaN layers exhibit additional excitations at 182, 288, 650--725, 363, 506cm-1 and the vicinity of E2H mode. The modes observed at 182, 288, 650--725 cm-1 are assigned to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation. Other new phonon modes are assigned to Mnx-Ny, Gax-Mny modes and the local vibrational mode of Mn atoms in the (Ga, Mn)N, which are in fair agreement with the standard theoretical results.
Keywords:  Mn-Ion implantation GaN      diluted magnetic semiconductors      Raman spectroscopy      x-ray diffraction  
Received:  16 May 2008      Revised:  05 June 2008      Accepted manuscript online: 
PACS:  61.72.uj (III-V and II-VI semiconductors)  
  61.05.cp (X-ray diffraction)  
  68.55.-a (Thin film structure and morphology)  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  75.50.Pp (Magnetic semiconductors)  
  78.30.Fs (III-V and II-VI semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 90407014).

Cite this article: 

Xu Da-Qing (徐大庆), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Li Pei-Xian (李培咸), Wang Chao (王超), Lü Hong-Liang (吕红亮), Tang Xiao-Yan (汤晓燕), Wang Yue-Hu (王悦湖) Study of (Ga, Mn)N prepared by Mn-Ion implantation using optical techniques 2008 Chin. Phys. B 17 4648

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