Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

doi:10.1088/1674-1056/21/1/017103

Abstract Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs). Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts (R_S) was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating R_S was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs.

Keywords: AlGaN/AlN/GaN heterostructures Schottky barrier diodes power consumption series resistance

Received: 29 July 2011
Revised: 24 August 2011
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	73.40.Cg	(Contact resistance, contact potential)
	51.50.+v	(Electrical properties)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10774090) and the National Basic Research Program of China (Grant No. 2007CB936602).

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Cao Zhi-Fang(曹芝芳), Lin Zhao-Jun(林兆军), LŰ Yuan-Jie(吕元杰), Luan Chong-Biao(栾崇彪), Yu Ying-Xia(于英霞), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 2012 Chin. Phys. B 21 017103

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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

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