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Chin. Phys. B, 2013, Vol. 22(2): 027901    DOI: 10.1088/1674-1056/22/2/027901
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influence of wet chemical cleaning on quantum efficiency of GaN photocathode

Wang Xiao-Hui (王晓晖), Gao Pin (高频), Wang Hong-Gang (王洪刚), Li Biao (李飙), Chang Ben-Kang (常本康)
Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China
Abstract  GaN samples 1-3 are cleaned by a 2:2:1 solution of sulfuric acid (98%) to hydrogen peroxide (30%) to de-ionized water; hydrochloric acid (37%); or a 4:1 solution of sulfuric acid (98%) to hydrogen peroxide (30%). The samples are activated by Cs/O after the same annealing process. X-ray photoelectron spectroscopy after the different ways of wet chemical cleaning shows: sample 1 has the largest proportion of Ga, N, and O among the three samples, while its C content is the lowest. After activation the quantum efficiency curves show sample 1 has the best photocathode performance. We think the wet chemical cleaning method is a process which will mainly remove C contamination.
Keywords:  GaN photocathode      X-ray photoelectron spectroscopy      wet chemical cleaning      quantum efficiency  
Received:  17 April 2012      Revised:  24 August 2012      Accepted manuscript online: 
PACS:  79.60.-i (Photoemission and photoelectron spectra)  
  72.80.-r (Conductivity of specific materials)  
  73.20.-r (Electron states at surfaces and interfaces)  
  73.61.-r (Electrical properties of specific thin films)  
Fund: Projects supported by the National Natural Science Foundation of China (Grant No. 60871012); the National Key Laboratory of Science and Technology Foundation on Low Light Level Night Vision (Grant No. J20110104); and the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions (Grant No. CXZZ11_0238).
Corresponding Authors:  Chang Ben-Kang     E-mail:  bkchang@njust.mail.edu.cn

Cite this article: 

Wang Xiao-Hui (王晓晖), Gao Pin (高频), Wang Hong-Gang (王洪刚), Li Biao (李飙), Chang Ben-Kang (常本康) Influence of wet chemical cleaning on quantum efficiency of GaN photocathode 2013 Chin. Phys. B 22 027901

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