Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

doi:10.1088/1674-1056/24/9/096802

Abstract

AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas (2DEG) performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the high-temperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19× 10¹³ cm^-2, electron mobility of 2101 cm²·V^-1·s^-1, and square resistance of 249 Ω is obtained.

Keywords: high electron mobility transistor two-dimensional electron gas GaN

Received: 05 December 2014
Revised: 31 March 2015
Accepted manuscript online:

PACS:	68.35.bg	(Semiconductors)
	68.35.Ct	(Interface structure and roughness)
	72.10.-d	(Theory of electronic transport; scattering mechanisms)

Fund:

Project support by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

Corresponding Authors: Zhao De-Gang
E-mail: dgzhao@red.semi.ac.cn

Cite this article:

He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zhu Jian-Jun (朱建军), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), Li Xiao-Jing (李晓静), Zhang Shu-Ming (张书明), Yang Hui (杨辉) Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure 2015 Chin. Phys. B 24 096802

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Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

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