Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method

doi:10.1088/1674-1056/23/12/127304

Abstract A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current (I_ds) simulation of an AlGaN/GaN-based (gallium nitride) high electron mobility transistor (AlGaN/GaN-based HEMT) at high power operation. Since an accurate radio frequency (RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of AlGaN/GaN high electron mobility transistor (HEMT) nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency (PAE) at class-AB quiescent bias of V_gs= -3.5 V, V_ds= 30 V with a frequency of 9.6 GHz are presented.

Keywords: AlGaN/GaN HEMT RF drain–source current RF dispersion effect power-added efficiency

Received: 19 June 2014
Revised: 24 July 2014
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.40.Bh	(Computer-aided design of microcircuits; layout and modeling)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61204086).

Corresponding Authors: Pongthavornkamol Tiwat
E-mail: lintiyuan@ime.ac.cn

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Pongthavornkamol Tiwat (林体元), Pang Lei (庞磊), Yuan Ting-Ting (袁婷婷), Liu Xin-Yu (刘新宇) Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method 2014 Chin. Phys. B 23 127304


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Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method

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