GROWTH MODE AND SURFACE RECONSTRUCTION OF GaN(000$\bar{1}$) THIN FILMS ON 6H-SiC(000$\bar{1}$)
Xue Qi-zhen (薛其贞)a, Xue Qi-kun (薛其坤)ab, S. Kuwanoa, K. Nakayamaa, T. Sakuraia
a Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan; b State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract Two-dimensional growth of GaN thin films on an atomically flat C-face 6H-SiC(000$\bar{1}$) surface prepared by ultra-high vacuum Si-etching is observed when using an AlN buffer layer in N plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy and reflection high energy electron diffraction observations reveal a series of Ga-stabilized reconstructions which are consistent with those reported for an N-polar GaN(000$\bar{1}$) film. The result, including the effect observed previously for GaN thin film on Si-terminated 6H-SiC(0001), agrees with the polarity assignment of heteroepitaxial wurtzite GaN films on polar 6H-SiC substrates, i.e., GaN film grown on SiC(000$\bar{1}$) is $\langle000\bar{1}\rangle$ oriented (N-face) while that on SiC(0001) is $\langle000{1}\rangle$ oriented (Ga-face).
Received: 30 March 2001
Revised: 29 April 2001
Accepted manuscript online:
Xue Qi-zhen (薛其贞), Xue Qi-kun (薛其坤), S. Kuwano, K. Nakayama, T. Sakurai GROWTH MODE AND SURFACE RECONSTRUCTION OF GaN(000$\bar{1}$) THIN FILMS ON 6H-SiC(000$\bar{1}$) 2001 Chinese Physics 10 157
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