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Chin. Phys. B, 2021, Vol. 30(10): 108502    DOI: 10.1088/1674-1056/ac1efd
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors

Lixiang Chen(陈丽香)1,2,†, Min Ma(马敏)1, Jiecheng Cao(曹杰程)1, Jiawei Sun(孙佳惟)1, Miaoling Que(阙妙玲)1, and Yunfei Sun(孙云飞)1,2,‡
1 School of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, China;
2 Tianping College of Suzhou University of Science and Technology, Suzhou 215009, China
Abstract  The role of the oxygen in AlGaN/GaN high electron mobility transistors (HEMTs) before and after semi-on state stress was discussed. Comparing with the electrical characteristics of the devices in vacuum, air, and oxygen atmosphere, it is revealed that the oxygen has significant influence on the electric characteristics and the hot-carrier-stress-induced degradation of the device. Comparing with the situation in vacuum, the gate leakage increased an order of magnitude in oxygen and air atmosphere. Double gate structure was used to separate the barrier leakage and surface leakage of AlGaN/GaN HEMT it is found that surface leakage is the major influencing factor in gate leakage of SiN-passivated devices before and after semi-on state stress. During semi-on state stress in the oxygen atmosphere, the electric-field-driven oxidation process promoted the oxidation of the nitride layer, and the oxidation layer in the SiN/AlGaN interface leads to the decreasing of the surface leakage.
Keywords:  semi-on state stress      AlGaN/GaN HEMTs      oxygen atmosphere  
Received:  24 May 2021      Revised:  19 July 2021      Accepted manuscript online:  19 August 2021
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  71.55.Eq (III-V semiconductors)  
  71.55.Ak (Metals, semimetals, and alloys)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 62104167), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20210863 and BK20180966), and by Qing Lan Project of Jiangsu Province, China.
Corresponding Authors:  Lixiang Chen, Yunfei Sun     E-mail:  chenlixiang0426@163.com;yfsun@usts.edu.cn

Cite this article: 

Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞) Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors 2021 Chin. Phys. B 30 108502

[1] Hou B, Ma X H, Chen W W, Zhu J J, Zhao S L, Chen Y H, Xie Y, Zhang J C and Hao Y 2015 Appl. Phys. Lett. 107 163503
[2] Vetury R, Zhang N Q, Keller S and Mishra U K 2001 IEEE Trans. Electron Dev. 48 560
[3] Green B M, Chu K K, Chumbes E M, Smart J A, Shealy J R and Eastman L F 2000 IEEE Electron Dev. Lett. 21 268
[4] Zhao S L, Wang Y, Yang X L, Lin Z Y, Wang C, Zhang J C, Ma X H and Hao Y 2014 Chin. Phys. B 23 097305
[5] Sahoo D K, Lal R K, Kim H, Tilak V and Eastman L F 2003 IEEE Trans. Electron Dev. 50 1163
[6] Kim H, Thompson R M, Tilak V, Prunty T R, Shealy J R and Eastman L F 2003 IEEE Electron Dev. Lett. 24 421
[7] Gao F, Lu B, Li L B, Kaun S, Speck J S, Thompson C V and Palacios T 2011 Appl. Phys. Lett. 99 223506
[8] Makaram P, Joh J, Alamo J A and Thompson C V 2010 Appl. Phys. Lett. 96 233509
[9] Feng G, Ching T S, Alamo J A, Thompson C V and Palacios T 2014 IEEE Trans. Electron Dev. 61 437
[10] Sasangka W A, Syaranamual G J, Gan C L and Thompson C V 2015 IEEE International Reliability Physics Symposium (IRPS), April 19-23, 2015, Monterey, USA, p. 6C.3.1
[11] Goyal N and Fjeldly T 2014 Appl. Phys. Lett. 105 033511
[12] Syaranamual G J, Sasangka W A, Made R I, Arulkumaran S, Ng G I, Foo S C, Gan C L and Thompson C V 2016 Microelectronics Reliability 64 589
[13] Killat N, Uren M J, Keller S, Kolluri S, Mishra U K and Kuball M 2014 Appl. Phys. Lett. 105 063506
[14] Chen Y H, Zhang K, Cao M Y, Zhao S L, Zhang J C, Ma X H and Hao Y 2014 Appl. Phys. Lett. 104 153509
[15] Kang D, Lim H, Kim C, Song I, Park J, Park Y and Chung J G 2007 Appl. Phys. Lett. 90 192101
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