1 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China; 2 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China; 3 School of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China; 4 Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China; 5 Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China; 6 School of Integrated Circuits, Tsinghua University, Beijing 100084, China; 7 Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; 8 State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Abstract A flower-like SnO2-SnO/porous GaN (FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN, and SnO2-SnO composites with p-n junctions were loaded onto PGaN surface directly applied to H2S sensor. Meanwhile, the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150 ℃ under 50 ppm H2S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas sensor. The lowering working temperature and high sensitivity (23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO2-SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test stability. The simple design strategy of FSS/PGaN-based H2S sensor highlights its potential in various applications.
Fund: Project supported by the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos. XK1060921115 and XK1060921002), Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 62204125), the National Key R&D Program of China (Grant No. 2022YFB3605404), and the Natural Science Foundation of Guangdong Province, China (Grant No. 2019A1515010790).
Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华) Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction 2023 Chin. Phys. B 32 020701
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