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Chin. Phys. B, 2021, Vol. 30(11): 117303    DOI: 10.1088/1674-1056/abff44
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template

Qun-Si Yang(羊群思)1,2, Qing Liu(刘清)1,2, Dong Zhou(周东)1,2, Wei-Zong Xu(徐尉宗)1,2, Yi-Wang Wang(王宜望)1,2, Fang-Fang Ren(任芳芳)1,2, and Hai Lu(陆海)1,2,†
1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;
2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Abstract  Alpha particle radiation detectors with planar double Schottky contacts (DSC) are directly fabricated on 5-μm-thick epitaxial semi-insulating (SI) GaN:Fe film with resistivity higher than 1×108Ω·cm. Under 10 V bias, the detector exhibits a low dark current of less than 5.0×10-11 A at room-temperature, which increases at higher temperatures. Linear behavior in the semi-log reverse current-voltage plot suggests that Poole-Frenkel emission is the dominant carrier leakage mechanism at high bias. Distinct double-peak characteristics are observed in the energy spectrum of alpha particles regardless of bias voltage. The energy resolution of the SI-GaN based detector is determined to be ~ 8.6% at the deposited energy of 1.209 MeV with a charge collection efficiency of ~ 81.7%. At a higher temperature of 90 ℃, the measured full width at half maximum (FWHM) rises to 235 keV with no shift of energy peak position, which proves that the GaN detector has potential to work stably in high temperature environment. This study provides a possible route to fabricate the low cost GaN-based alpha particle detector with reasonable performance.
Keywords:  GaN      alpha particle      detector      double Schottky contacts  
Received:  19 January 2021      Revised:  14 April 2021      Accepted manuscript online:  10 May 2021
PACS:  73.40.Sx (Metal-semiconductor-metal structures)  
  73.40.Cg (Contact resistance, contact potential)  
  29.40.Wk (Solid-state detectors)  
  29.30.Kv (X- and γ-ray spectroscopy)  
Fund: Project supported by the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20190302 and BK20201253).
Corresponding Authors:  Hai Lu     E-mail:  hailu@nju.edu.cn

Cite this article: 

Qun-Si Yang(羊群思), Qing Liu(刘清), Dong Zhou(周东), Wei-Zong Xu(徐尉宗), Yi-Wang Wang(王宜望), Fang-Fang Ren(任芳芳), and Hai Lu(陆海) Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template 2021 Chin. Phys. B 30 117303

[1] Trivellin N, Meneghini M, Zanoni E, Orita K and Meneghesso G 2010 Proceedings of the Reliability Physics Symposium, May 2-6, 2010, Anaheim, CA,USA, p. 1
[2] Meneghini M, Trevisanello L, Meneghesso G and Zanoni E 2008 IEEE Trans. Device Mater. Reliab. 8 323
[3] Guha S and Bojarczuk N A 1998 Appl. Phys. Lett. 72 415
[4] Xie F, Lu H, Xiu X Q, Chen D J, Han P, Zhang R and Zheng Y D 2011 Solid State Electron. 57 39
[5] Alamo J D and Joh J 2009 Microelectron. Reliab. 49 1200
[6] Eastman L F and Mishra U K 2002 IEEE Spectr. 39 28
[7] Nord J, Nordlund K and Keinonen J 2003 Phys. Rev. B 68 184104
[8] Sellin P J and Vaitkus J 2006 Nucl. Instrum. Methods Phys. Res., Sect. A 557 479
[9] Vaitkus J, Cunningham W, Gaubas E, Rahman M, Sakai S, Smith K M and Wang T 2003 Nucl. Instrum. Methods Phys. Res., Sect. A 509 60
[10] Min L, Zhang G G, Kai F and Yu G H 2010 Chin. Phys. Lett. 27 052901
[11] Polyakov A Y, Smirnov N B, Govorkov A V, Markov A V, Kozhukhova E A, Gazizov I M, Kolin N G, Merkurisov D I, Boiko V M, Korulin A V, Zalyetin V M, Pearton S J, Lee I H, Dabiran A M and Chow P P 2009 J. Appl. Phys. 106 103708
[12] Xu Q, Mulligan P, Wang J H, Chuirazzi W and Cao L 2017 Nucl. Instrum. Methods Phys. Res., Sect. A 849 11
[13] Mulligan P, Wang J and Cao L 2013 Nucl. Instrum. Methods Phys. Res., Sect. A 719 13
[14] Sellin P J, Hoxley D, Lohstroh A, Simon A, Cunningham W, Rahman M, Vaitkus J and Gaubas E 2004 Nucl. Instrum. Methods Phys. Res., Sect. A 531 82
[15] Harrell W R and Gopalkrishnan C 2002 Thin Sol. Films 405 205
[16] Chaudhuri S K, Kleppinger J W and Mandal K C 2020 J. Appl. Phys. 128 114501
[17] L'annunziata M F 2007 Radioactivity: Introduction and History (Amsterdam: Elsevier Science) pp. 71-84
[18] Owens A and Peacock A 2004 Nucl. Instrum. Methods Phys. Res., Sect. A 531 18
[19] Strokan N B, Ivanov A M, Lebedev A A, Syvajarvi M and Yakimova R 2005 Semiconductors 39 1420
[20] Wang J H, Mulligan P, Brillson L and Cao L R 2015 Appl. Phys. Rev. 2 031102
[21] Raja P V, Akhtar J, Rao C V S, Vala S, Abhangi M and Murty N V L N 2017 Nucl. Instrum. Methods Phys. Res., Sect. A 869 118
[22] Ziegler J F, Ziegler M D and Biersack J P 2008 Nucl. Instrum. Methods Phys. Res., Sect. B 268 1818
[23] Vaitkus J, Cunningham W, Gaubas E, Rahman M, Sakai S, Smith K M and Wang T 2003 Nucl. Instrum. Methods Phys. Res., Sect. A 509 60
[24] Liu L Y, Wang L, Jin P, Liu J L, Zhang X P, Chen L, Zhang J F, Ouyang X P, Liu A, Huang R H and Bai S 2017 Sensors 17 2334
[25] Ruddy F H, Seidel J G and Sellin P 2009 Proceedings of the Nuclear Science Symposium Conference Record, 24 Oct.-1 Nov. 2009, Orlando, FL, USA, p. 2201
[26] Richter E, Gridneva E, Weyers M and Tränkle G 2016 J. Cryst. Growth 456 97
[27] Kubota M, Onuma T, Ishihara Y, Usui A, Uedono A and Chichibu S F 2009 J. Appl. Phys. 105 083542
[28] Chen Y, Lu H, Wang G, Chen D J, Ren F F, Zhang R and Zheng Y D 2014 Sens. Actuators A Phys. 216 308
[29] Knoll G F 2010 Radiation Detection and Measurement, 4nd edn. (Hoboken: John Wiley& sons) pp. 115-118
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