Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

doi:10.1088/1674-1056/18/1/052

Abstract

Abstract Low pressure metalorganic chemical vapour deposition (LP-MOCVD) growth and characteristics of InAsSb on (100) GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52×10¹⁶cm^-3.

Keywords: metalorganic chemical vapour deposition (MOCVD) antimonides semiconducting indium compounds

Received: 15 October 2007
Revised: 24 August 2008
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	68.55.-a	(Thin film structure and morphology)
	73.61.Ey	(III-V semiconductors)
	78.55.Cr	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No 2005A000200), the West Light Plan of China (Grant No 2005ZD01), and the Xi'an Applied Materials Innovation Fund of China (Grant No XA-AM-200613).

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Yan Jun-Feng(闫军锋), Wang Tao(汪韬), Wang Jing-Wei (王警卫), Zhang Zhi-Yong(张志勇), and Zhao Wu(赵武) Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition 2009 Chin. Phys. B 18 320

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Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

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