Abstract A novel normally-off double channel reverse conducting (DCRC) HEMT with an integrated MOS-channel diode (MCD) is proposed and investigated by TCAD simulation. The proposed structure has two features: one is double heterojunctions to form dual 2DEG channels named the 1st path and the 2nd path for reverse conduction, and the other is the MCD forming by the trench source metal, source dielectric, and GaN. At the initial reverse conduction stage, the MCD acts as a switch to control the 1st path which would be turned on prior to the 2nd path. Because of the introduction of the 1st path, the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction performance. Compared with the conventional HEMT (Conv. HEMT), the DCRC-HEMT can obtain a low reverse turn-on voltage (VRT) and its VRT is independent of the gate-source bias (VGS) at the same time. The DCRC-HEMT achieves the VRT of 0.62 V, which is 59.7% and 75.9% lower than that of the Conv. HEMT at VGS = 0 V and -1 V, respectively. In addition, the forward conduction capability and blocking characteristics almost remain unchanged. In the end, the key fabrication flows of DCRC-HEMT are presented.
Fund: Project supported by the National Natural Science Foundations of China (Grant Nos. 61874149 and U20A20208) and the Outstanding Youth Science and Technology Foundation of China (Grant No. 2018-JCJQ-ZQ-060).
Corresponding Authors:
Xiaorong Luo
E-mail: xrluo@uestc.edu.cn
Cite this article:
Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉), and Bo Zhang(张波) Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode 2023 Chin. Phys. B 32 098506
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