CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Field plate structural optimization for enhancing the power gain of GaN-based HEMTs |
Zhang Kai (张凯)a, Cao Meng-Yi (曹梦逸)a, Lei Xiao-Yi (雷晓艺)a, Zhao Sheng-Lei (赵胜雷)a, Yang Li-Yuan (杨丽媛)a, Zheng Xue-Feng (郑雪峰)a, Ma Xiao-Hua (马晓华)a b, Hao Yue (郝跃)a |
a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
b School of Technical Physics, Xidian University, Xi’an 710071, China |
|
|
Abstract A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate (FP) techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simultaneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 μm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FP. This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.
|
Received: 05 February 2013
Revised: 26 March 2013
Accepted manuscript online:
|
PACS:
|
73.40.Kp
|
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
|
73.61.Ey
|
(III-V semiconductors)
|
|
85.30.Tv
|
(Field effect devices)
|
|
Fund: Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051225013). |
Corresponding Authors:
Ma Xiao-Hua
E-mail: xhma@xidian.edu.cn
|
Cite this article:
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Lei Xiao-Yi (雷晓艺), Zhao Sheng-Lei (赵胜雷), Yang Li-Yuan (杨丽媛), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Field plate structural optimization for enhancing the power gain of GaN-based HEMTs 2013 Chin. Phys. B 22 097303
|
[1] |
Karmalkar S and Mishra U K 2001 IEEE Trans. Electron Devices 48 1515
|
[2] |
Saito W, Takada Y, Kuraguchi M, Tsuda K, Omura I, Ogura T and Ohashi H 2003 IEEE Trans. Electron Devices 50 2528
|
[3] |
Xing H, Dora Y, Chini A, Heikman S, Keller S and Mishra U K 2004 IEEE Electron Device Lett. 25 161
|
[4] |
Ando Y, Okamoto Y, Miamoto H, Nakayama T, Inoue T and Kuzuhara M 2003 IEEE Electron Device Lett. 24 289
|
[5] |
Saito W, Kakiuchi Y, Nitta T, Saito Y, Noda T, Fujimoto H, Yoshioka A, Ohno T and Yamaguchi M 2010 IEEE Electron Device Lett. 31 659
|
[6] |
Yang L, Hu G Z, Hao Y, Ma X H, Quan S, Yang L Y and Jiang S G 2010 Chin. Phys. B 19 047301
|
[7] |
Wu Y F, Moore M, Saxler A, Wisleder T and Parikh P 2006 Device Research Conference, June 26-28, 2006, PA, USA, p. 151
|
[8] |
Okamoto Y, Ando Y, Nakayama T, Hataya K, Miyamoto H, Inoue T, Sendaand M, Hirata K, Kosaki M, Shibata N and Kuzuhara M 2004 IEEE Trans. Electron Devices 51 2217
|
[9] |
Dora Y, Chakraborty A, McCarthy L, Keller S, DenBaars S P and Mishra U K 2006 IEEE Electron Device Lett. 27 713
|
[10] |
Pei Y, Chen Z, Brown D, Keller S, DenBaars S P and Mishra U K 2009 IEEE Electron Device Lett. 30 328
|
[11] |
Zhang K, Cao M Y, Chen Y H, Yang L Y, Wang C, Ma X H and Hao Y 2013 Chin. Phys. B 22 057304
|
[12] |
Xie G, Edward X, Lee J, Hashemi N, Zhang B, Fu F Y and Ng W T 2012 IEEE Electron Device Lett. 33 670
|
[13] |
Ando Y, Wakejima A, Okamoto Y, Nakayama T, Ota K, Yamanoguchi K, Murase Y, Kasahara K, Matsunaga K, Inoue T, Miyamoto H and Miyamoto H 2005 IEDM Tech. Dig. 576
|
[14] |
Eldad B T, Hilt O, Brunner F, Sidorov V, Würfl J and Günther T 2010 IEEE Trans. Electron Devices 57 1208
|
[15] |
Dambrine G, Cappy A, Heliodore F and Playez E 1988 IEEE Trans. Microw. Theory Tech. 36 1151
|
[16] |
Brannick A, Zakhleniuk N A, Ridley B K, James R, Shealy W, Schaff J and Lester F E 2009 IEEE Electron Device Lett. 30 436
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|