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Chin. Phys. B, 2011, Vol. 20(5): 057801    DOI: 10.1088/1674-1056/20/5/057801
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization

Zhang Jin-Feng (张金风), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)
School of Microelectronics, Xidian University, Xi'an 710071, China; Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  Nonpolar a-plane GaN epilayers are grown on several r-plane sapphire substrates by metal organic chemical vapour deposition using different nucleation layers: (A) a GaN nucleation layer deposited at low temperature (LT); (B) an AlN nucleation layer deposited at high temperature; or (C) an LT thin AlN nucleation layer with an AlN layer and an AlN/AlGaN superlattice both subsequently deposited at high temperature. The samples have been characterized by X-ray diffraction (XRD), atomic force microscopy and photoluminescence. The GaN layers grown using nucleation layers B and C show narrower XRD rocking curves than that using nucleation layer A, indicating a reduction in crystal defect density. Furthermore, the GaN layer grown using nucleation layer C exhibits a surface morphology with triangular defect pits eliminated completely. The improved optical property, corresponding to the enhanced crystal quality, is also confirmed by temperature-dependent and excitation power-dependent photoluminescence measurements.
Keywords:  a-plane GaN      metal organic chemical vapour deposition      AlN/AlGaN superlattice      photoluminescence  
Received:  17 November 2010      Revised:  27 December 2010      Accepted manuscript online: 
PACS:  78.55.Cr (III-V semiconductors)  
  81.15.Kk (Vapor phase epitaxy; growth from vapor phase)  
Fund: Project supported by the National Key Science & Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2008ZX01002-002) and the Major Program and the Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033).

Cite this article: 

Zhang Jin-Feng (张金风), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization 2011 Chin. Phys. B 20 057801

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