InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

doi:10.1088/1674-1056/20/2/028402

Abstract In this paper, InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied. The short-circuit density, fill factor and open-circuit voltage (V_oc) of the device are 0.7 mA/cm², 0.40 and 2.22 V, respectively. The results exhibit a significant enhancement of V_oc compared with those of InGaN-based hetero and homojunction cells. This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing V_oc of an In-rich In_xGa_1-xN solar cell. The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm). The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well.

Keywords: InGaN solar cell multiple quantum wells

Received: 23 April 2010
Revised: 19 September 2010
Accepted manuscript online:

PACS:	84.60.Jt	(Photoelectric conversion)
	85.35.Be	(Quantum well devices (quantum dots, quantum wires, etc.))
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by Knowledge Innovation Engineering of the Chinese Academy of Sciences (Grant No. YYYJ-0701-02), the National Natural Science Foundation of China (Grant Nos. 60890193 and 60906006), the State Key Development Program for Basic Research of China (Grant Nos. 2006CB604905 and 2010CB327503), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant Nos. ISCAS2008T01, ISCAS2009L01, and ISCAS2009L02).

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Zhang Xiao-Bin(张小宾), Wang Xiao-Liang(王晓亮), Xiao Hong-Ling(肖红领), Yang Cui-Bai(杨翠柏), Hou Qi-Feng(侯奇峰), Yin Hai-Bo(殷海波), Chen Hong(陈竑), and Wang Zhan-Guo(王占国) InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 2011 Chin. Phys. B 20 028402

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InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

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