Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study

doi:10.1088/1674-1056/20/8/087307

Abstract This paper studies the drain current collapse of AlGaN/GaN metal—insulator—semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by applying dual-pulsed stress to the gate and drain of the device. For NbAlO MIS-HEMT, smaller current collapse is found, especially when the gate static voltage is -8 V. Through a thorough study of the gate—drain conductance dispersion, it is found that the growth of NbAlO can reduce the trap density of the AlGaN surface. Therefore, fewer traps can be filled by gate electrons, and hence the depletion effect in the channel is suppressed effectively. It is proved that the NbAlO gate dielectric can not only decrease gate leakage current but also passivate the AlGaN surface effectively, and weaken the current collapse effect accordingly.

Keywords: metal—insulator—semiconductor high electron-mobility transistor GaN current collapse passivation

Received: 04 January 2011
Revised: 09 March 2011
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by the State Key Program and Major Program of the National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191) and the Fundamental Research Funds for the Central Universities (Grant Nos. JY10000925002 and JY10000904009).

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Bi Zhi-Wei(毕志伟), Hu Zhen-Hua(胡振华), Mao Wei(毛维), Hao Yue(郝跃), Feng Qian(冯倩), Cao Yan-Rong(曹艳荣), Gao Zhi-Yuan(高志远), Zhang Jin-Cheng(张进成), Ma Xiao-Hua(马晓华), Chang Yong-Ming(常永明), Li Zhi-Ming(李志明), and Mei Nan(梅楠) Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study 2011 Chin. Phys. B 20 087307

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Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study

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