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Chin. Phys. B, 2014, Vol. 23(11): 117803    DOI: 10.1088/1674-1056/23/11/117803
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

Wang Wei-Ying (王维颖)a, Liu Gui-Peng (刘贵鹏)a, Jin Peng (金鹏)a, Mao De-Feng (毛德丰)a, Li Wei (李维)a, Wang Zhan-Guo (王占国)a, Tian Wu (田武)b, Chen Chang-Qing (陈长清)b
a Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Abstract  

Low temperature photoluminescence (PL) measurements have been performed for a set of GaN/AlxGa1-xN quantum wells (QWs). The experimental results show that the optical full width at half maximum (FWHM) increases relatively rapidly with increasing Al composition in the AlxGa1-xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM's broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.

Keywords:  GaN/AlGaN quantum wells      interface roughness      optical full width at half maximum  
Received:  13 March 2014      Revised:  05 May 2014      Accepted manuscript online: 
PACS:  78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)  
  78.66.Fd (III-V semiconductors)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
Fund: 

Project supported by the National Basic Research Program of China (Grant No. 2012CB619306) and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

Corresponding Authors:  Liu Gui-Peng     E-mail:  liugp@semi.ac.cn

Cite this article: 

Wang Wei-Ying (王维颖), Liu Gui-Peng (刘贵鹏), Jin Peng (金鹏), Mao De-Feng (毛德丰), Li Wei (李维), Wang Zhan-Guo (王占国), Tian Wu (田武), Chen Chang-Qing (陈长清) Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells 2014 Chin. Phys. B 23 117803

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