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AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition |
Bi Zhi-Wei(毕志伟)a)†, Feng Qian(冯倩)a), Hao Yue(郝跃)a)‡ , Wang Dang-Hui(王党会)b), Ma Xiao-Hua(马晓华) a), Zhang Jin-Cheng(张进成)a), Quan Si(全思)a), and Xu Sheng-Rui(许晟瑞) a) |
a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, The School of Microelectronics, Xidian University, Xi'an 710071, China; b School of Materials Science and Engineering, Xi'an Shiyou University, Xi'an 710065, China |
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Abstract We present an AlGaN/GaN metal—insulator—semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD). Surface morphology of samples are observed by atomic force microscopy (AFM), indicating that the ALD NbAlO has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance—voltage (C—V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN. The fabricated MIS-HEMT with a gate length of 0.5 μ m exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.
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Revised: 16 January 2010
Accepted manuscript online:
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PACS:
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85.30.Tv
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(Field effect devices)
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77.55.+f
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81.15.Ef
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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68.35.B-
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(Structure of clean surfaces (and surface reconstruction))
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68.37.Ps
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(Atomic force microscopy (AFM))
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Fund: Project supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191). |
Cite this article:
Bi Zhi-Wei(毕志伟), Feng Qian(冯倩), Hao Yue(郝跃), Wang Dang-Hui(王党会), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Quan Si(全思), and Xu Sheng-Rui(许晟瑞) AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition 2010 Chin. Phys. B 19 077303
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