CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation |
Zhang Sheng (张昇)a b, Wei Ke (魏珂)b, Yu Le (余乐)a b, Liu Guo-Guo (刘果果)b, Huang Sen (黄森)b, Wang Xin-Hua (王鑫华)b, Pang Lei (庞磊)b, Zheng Ying-Kui (郑英奎)b, Li Yan-Kui (李艳奎)b, Ma Xiao-Hua (马晓华)a, Sun Bing (孙兵)b, Liu Xin-Yu (刘新宇)b |
a School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Xidian University, Xi’an 710071, China;
b Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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Abstract In this paper, Al2O3 ultrathin film used as the surface passivation layer for AlGaN/GaN high electron mobility transistor (HEMT) is deposited by thermal atomic layer deposition (ALD), thereby avoiding plasma-induced damage and erosion to the surface. A comparison is made between the surface passivation in this paper and the conventional plasma enhanced chemical vapor deposition (PECVD) SiN passivation. A remarkable reduction of the gate leakage current and a significant increase in small signal radio frequency (RF) performance are achieved after applying Al2O3+BCB passivation. For the Al2O3+BCB passivated device with a 0.7 μ gate, the value of fmax reaches up to 100 GHz, but it decreases to 40 GHz for SiN HEMT. The fmax/ft ratio (≥ 4) is also improved after Al2O3+BCB passivation. The capacitance-voltage (C-V) measurement demonstrates that Al2O3+BCB HEMT shows quite less density of trap states (on the order of magnitude of 1010 cm-2) than that obtained at commonly studied SiN HEMT.
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Received: 08 June 2015
Revised: 23 July 2015
Accepted manuscript online:
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PACS:
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73.40.Ns
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(Metal-nonmetal contacts)
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73.61.Ey
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(III-V semiconductors)
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73.20.-r
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(Electron states at surfaces and interfaces)
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Corresponding Authors:
Wei Ke, Ma Xiao-Hua
E-mail: weike@ime.ac.cn;xhma@xidian.edu.cn
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Cite this article:
Zhang Sheng (张昇), Wei Ke (魏珂), Yu Le (余乐), Liu Guo-Guo (刘果果), Huang Sen (黄森), Wang Xin-Hua (王鑫华), Pang Lei (庞磊), Zheng Ying-Kui (郑英奎), Li Yan-Kui (李艳奎), Ma Xiao-Hua (马晓华), Sun Bing (孙兵), Liu Xin-Yu (刘新宇) AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation 2015 Chin. Phys. B 24 117307
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