Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition

doi:10.1088/1674-1056/19/2/026804

Abstract This paper reports that Al_1-xIn_xN epilayers were grown on GaN template by metalorganic chemical vapor deposition with an In content of 7%--20%. X-ray diffraction results indicate that all these Al_1-xIn_xN epilayers have a relatively low density of threading dislocations. Rutherford backscattering/channeling measurements provide the exact compositional information and show that a gradual variation in composition of the Al_1-xIn_xN epilayer happens along the growth direction. The experimental results of optical reflection clearly show the bandgap energies of Al_1-xIn_xN epilayers. A bowing parameter of 6.5 eV is obtained from the compositional dependence of the energy gap. The cathodoluminescence peak energy of the Al_1-xIn_xN epilayer is much lower than its bandgap, indicating a relatively large Stokes shift in the Al_1-xIn_xN sample.

Keywords: metalorganic chemical vapor deposition Al_1-xIn_xN gradual variation in composition optical reflectance spectra

Received: 24 March 2009
Revised: 02 June 2009
Accepted manuscript online:

PACS:	68.55.-a	(Thin film structure and morphology)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.66.Fd	(III-V semiconductors)
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	78.60.Hk	(Cathodoluminescence, ionoluminescence)
	61.72.Hh	(Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60776047, 60506001, 60476021, 60576003 and 60836003).

Cite this article:

Lu Guo-Jun(卢国军), Zhu Jian-Jun(朱建军), Jiang De-Sheng(江德生), Wang Yu-Tian(王玉田),Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺),Zhang Shu-Ming(张书明), and Yang Hui(杨辉) Structural and optical properties of Al_1-xIn_xN epilayers on GaN template grown by metalorganic chemical vapor deposition 2010 Chin. Phys. B 19 026804

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Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition

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Structural and optical properties of Al_1-xIn_xN epilayers on GaN template grown by metalorganic chemical vapor deposition