Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate

doi:10.1088/1674-1056/ac8735

Abstract The reverse gate leakage mechanism of W-gate and TiN-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with N₂ plasma surface treatment is investigated using current-voltage (I-V) and capacitance-voltage (C-V) characteristics and theoretical calculation analysis. It is found that the main reverse gate leakage mechanism of both devices is the trap-assisted tunneling (TAT) mechanism in the entire reverse bias region (-30 V to 0 V). It is also found that the reverse gate leakage current of the W-gate AlGaN/GaN HEMTs is smaller than that of the TiN gate at high reverse gate bias voltage. Moreover, the activation energies of the extracted W-gate and TiN-gate AlGaN/GaN HEMTs are 0.0551 eV-0.127 eV and 0.112 eV-0.201 eV, respectively.

Keywords: AlGaN/GaN trap-assisted tunneling (TAT) W gate TiN gate

Received: 01 June 2022
Revised: 11 July 2022
Accepted manuscript online: 05 August 2022

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.-z	(Semiconductor devices)
	73.20.-r	(Electron states at surfaces and interfaces)

Corresponding Authors: Xin-Yu Liu, Wei-Jun Luo
E-mail: xyliu@ime.ac.cn;luoweijun@ime.ac.cn

Cite this article:

Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军) Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate 2023 Chin. Phys. B 32 037201

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Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate

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